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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| NE5510279A-T1-A DISTI # NE5510279A-T1-A | Rochester Electronics LLC | - Bulk (Alt: NE5510279A-T1-A) Min Qty: 171 Container: Bulk | Americas - 0 |
|
| NE5510279A-T1-A | Renesas Electronics Corporation | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant | 6462 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: NE5510279A OMO.#: OMO-NE5510279A-1152 |
RF POWER TRANSISTOR |
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Mfr.#: NE5510279A-T1 OMO.#: OMO-NE5510279A-T1-1190 |
Neu und Original |
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Mfr.#: NE5510279A-T1-A OMO.#: OMO-NE5510279A-T1-A-1152 |
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
|
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Mfr.#: NE5510279A-T1-A , EM357- |
Neu und Original |
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Mfr.#: NE5510279A-T1-A SMD OMO.#: OMO-NE5510279A-T1-A-SMD-1190 |
Neu und Original |