RN4906,LF(CT

Mfr. #:: RN4906,LF(CT
Hersteller:: Toshiba
Beschreibung:: Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: RN4906,LF(CT Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Toshiba

Produktkategorie:: Bipolartransistoren – vorgespannt

RoHS:: Y

Polarität des Transistors:: NPN, PNP

Typischer Eingangswiderstand:: 4.7 kOhms

Typisches Widerstandsverhältnis:: 0.1

Montageart:: SMD/SMT

Paket / Koffer:: SOT-363-6

DC-Kollektor/Basisverstärkung hfe Min:: 80

Kollektor- Emitterspannung VCEO Max:: 50 V

Kontinuierlicher Kollektorstrom:: 100 mA

Pd - Verlustleistung:: 200 mW

Serie:: RN4906

Verpackung:: Spule

Emitter- Basisspannung VEBO:: 5 V

Marke:: Toshiba

Anzahl der Kanäle:: 2 Channel

Produktart:: BJTs – Bipolartransistoren – Vorgespannt

Werkspackungsmenge:: 3000

Unterkategorie:: Transistoren

Gewichtseinheit:: 0.000212 oz

Tags: RN4906, RN490, RN49, RN4

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RN4906,LF(CT Beschreibung

***i-Key: TRANS NPN/PNP PREBIAS 0.2W US6

***ical: Trans Digital BJT NPN 50V 100mA 200mW 6-Pin US T/R

***el Electronic: Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

***i-Key: TRANS 2NPN PREBIAS 0.2W US6

***: TRANS US6 PLN (LF) 200MW

***ure Electronics: UMB10N Series 50 V 100 mA Surface Mount Dual PNP Digital Transistor - SC-88

***p One Stop Global: Trans Digital BJT PNP 50V 100mA 6-Pin UMT T/R

***ment14 APAC: Transistor DUAL UM6 PNP/PNP; Digital Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:-100mA;

***ark: TRANSISTOR DUAL UM6 PNP/PNP; Transistor Type:General Purpose; Transistor Polarity:Dual PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:150mW; Min Hfe:80; ft, Typ:250MHz; Case ;RoHS Compliant: Yes

***nell: TRANSISTOR DUAL UM6 PNP/PNP; Digital Transistor Polarity: Dual PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMB10N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: -100mA; DC Current Gain hFE: 80hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 80; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-363; Transistor Polarity: PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

***p One Stop Global: Trans Digital BJT PNP 50V 100mA 200mW Automotive 6-Pin SOT-363 T/R

***ca Corp: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

***ure Electronics: DDA Series 50 V 100 mA Dual PNP Pre-Biased Small Signal Transistor - SOT-363

***et: Trans Digital BJT NPN 50V 0.1A 6-Pin US Embossed T/R

*** Electronics: Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

***i-Key: TRANS 2NPN PREBIAS 0.2W US6

***el Electronic: IC OPAMP GP 2 CIRCUIT 10UMAX

***: TRANS US6 PLN (LF) 200MW

***et: Trans Digital BJT NPN 50V 0.1A 6-Pin US Embossed T/R

***i-Key: TRANS 2NPN PREBIAS 0.2W US6

***el Electronic: IC OPAMP CURR SENSE 800KHZ 8UMAX

***: TRANS US6 PLN (LF) 200MW

***p One Stop: Trans Digital BJT NPN/PNP 50V 100mA 150mW 6-Pin UMT T/R

***SIT Distribution GmbH: Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***ure Electronics: UMD2N Series 50 V 100 mA Surface Mount Dual NPN/PNP Digital Transistor - SC-88

***ark: Digital Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:22Kohm; Base-Emitter Resistor R2:22Kohm; Resistor Ratio, R1 / R2:- Rohs Compliant: Yes

***nell: TRANSISTOR DUAL UM6 PNP/NPN; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 22kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMD2N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 56hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 56; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-363; Transistor Polarity: NPN, PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
RN4906,LF DISTI # RN4906LFCT-ND	Toshiba America Electronic Components	TRANS NPN/PNP PREBIAS 0.2W US6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5560In Stock	1000:$0.0579 500:$0.0852 250:$0.0999 100:$0.1590 25:$0.2044 10:$0.2840 1:$0.3100
RN4906,LF(CT DISTI # 757-RN4906LF(CT	Toshiba America Electronic Components	Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor RoHS: Compliant	0	1:$0.3000 10:$0.1950 100:$0.0820 1000:$0.0560 3000:$0.0420 9000:$0.0360 24000:$0.0340 45000:$0.0320 99000:$0.0280
RN4906,LF	Toshiba America Electronic Components	Bipolar Transistors - Pre-Biased US6-PLN RoHS: Compliant	Americas -

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: RN4906,LF(CT OMO.#: OMO-RN4906-LF-CT	Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
	Mfr.#: RN4906,LF OMO.#: OMO-RN4906-LF-TOSHIBA-SEMICONDUCTOR-AND-STOR	Bipolar Transistors - Pre-Biased US6-PLN
	Mfr.#: RN4906FE(TE85L,F) OMO.#: OMO-RN4906FE-TE85L-F--123	Bipolar Transistors - Pre-Biased Gen Trans PNP x 2 ES6, -50V, -100A
	Mfr.#: RN4906FELF(CTCT-ND OMO.#: OMO-RN4906FELF-CTCT-ND-1190	Neu und Original
	Mfr.#: RN4906LFDKR-ND OMO.#: OMO-RN4906LFDKR-ND-1190	Neu und Original
	Mfr.#: RN4906LFTR-ND OMO.#: OMO-RN4906LFTR-ND-1190	Neu und Original
	Mfr.#: RN4906FELF(CT OMO.#: OMO-RN4906FELF-CT-1190	Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRAN 200MW/1MHZ
	Mfr.#: RN4906TE85L OMO.#: OMO-RN4906TE85L-1190	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
	Mfr.#: RN4906/VF OMO.#: OMO-RN4906-VF-1190	Neu und Original
	Mfr.#: RN4906LF(CT OMO.#: OMO-RN4906LF-CT-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von RN4906,LF(CT dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,30 $~~; ~~0,30 $~~

10: ~~0,20 $~~; ~~1,95 $~~

100: ~~0,08 $~~; ~~8,20 $~~

1000: ~~0,06 $~~; ~~56,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

RN4906 19
RN490 157
RN49 388
RN4 767

RN4906,LF(CT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes