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FDS89141

FDS89141
Mfr. #:
FDS89141
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET 2N-CH 100V 3.5A 8SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDS89141 Datenblatt
Die Zustellung:
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Zahlung:
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ECAD Model:
Mehr Informationen:
FDS89141 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
FETs - Arrays
Serie
PowerTrenchR
Verpackung
Digi-ReelR Alternative Verpackung
Gewichtseinheit
0.006596 oz
Montageart
SMD/SMT
Paket-Koffer
8-SOIC (0.154", 3.90mm Width)
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
8-SO
Aufbau
Dual
FET-Typ
2 N-Channel (Dual)
Leistung max
1.6W
Transistor-Typ
2 N-Channel
Drain-zu-Source-Spannung-Vdss
100V
Eingangskapazität-Ciss-Vds
398pF @ 50V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
3.5A
Rds-On-Max-Id-Vgs
62 mOhm @ 3.5A, 10V
Vgs-th-Max-Id
4V @ 250μA
Gate-Lade-Qg-Vgs
7.1nC @ 10V
Pd-Verlustleistung
31 W
Maximale-Betriebstemperatur
+ 150 C
ID-Dauer-Drain-Strom
3.5 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Widerstand
62 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
5.1 nC
Vorwärts-Transkonduktanz-Min
14.7 S
Tags
FDS891, FDS89, FDS8, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Dual N-Channel PowerTrench® MOSFET 100V, 3.5A, 62mΩ
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***ment14 APAC
MOSFET, NN CH, 100V, 3.5A, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:31W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
N-Channel PowerTrench® MOSFETs
ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more
Teil # Mfg. Beschreibung Aktie Preis
FDS89141
DISTI # FDS89141CT-ND		ON SemiconductorMOSFET 2N-CH 100V 3.5A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		12929In Stock
  • 1000:$0.7818
  • 500:$0.9902
  • 100:$1.2769
  • 10:$1.6160
  • 1:$1.8200
FDS89141
DISTI # FDS89141DKR-ND		ON SemiconductorMOSFET 2N-CH 100V 3.5A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		12929In Stock
  • 1000:$0.7818
  • 500:$0.9902
  • 100:$1.2769
  • 10:$1.6160
  • 1:$1.8200
FDS89141
DISTI # FDS89141TR-ND		ON SemiconductorMOSFET 2N-CH 100V 3.5A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		12500In Stock
  • 2500:$0.7084
FDS89141
DISTI # FDS89141		ON SemiconductorTrans MOSFET N-CH 100V 3.5A 8-Pin SO T/R (Alt: FDS89141)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    FDS89141
    DISTI # FDS89141    		ON SemiconductorTrans MOSFET N-CH 100V 3.5A 8-Pin SO T/R - Tape and Reel (Alt: FDS89141)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.6009
    • 5000:$0.5969
    • 10000:$0.5889
    • 15000:$0.5819
    • 25000:$0.5669
    FDS89141
    DISTI # 88T3365    		ON SemiconductorMOSFET, NN CHANNEL, 100V, 3.5A, 8SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:3.5A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.1V RoHS Compliant: Yes0
    • 1:$1.5100
    • 10:$1.2900
    • 25:$1.1900
    • 50:$1.0900
    • 100:$0.9900
    • 250:$0.9330
    • 500:$0.8750
    • 1000:$0.6900
    FDS89141
    DISTI # 27T6448    		ON SemiconductorFET 100V 62.0 MOHM SO8 / REEL0
    • 1:$0.6290
    • 2500:$0.6210
    • 5000:$0.6140
    • 10000:$0.6060
    FDS89141.
    DISTI # 27AC5725    		Fairchild Semiconductor CorporationFET 100V 62.0 MOHM SO8 ROHS COMPLIANT: YES0
    • 1:$0.6290
    • 2500:$0.6210
    • 5000:$0.6140
    • 10000:$0.6060
    FDS89141
    DISTI # 512-FDS89141    		ON SemiconductorMOSFET 100V Dual N-Channel PowerTrench MOSFET
    RoHS: Compliant    		0
    • 1:$1.5100
    • 10:$1.2900
    • 100:$0.9900
    • 500:$0.8750
    • 1000:$0.6900
    FDS89141
    DISTI # 2083349    		ON SemiconductorMOSFET, NN CH, 100V, 3.5A, 8SOIC
    RoHS: Compliant    		240
    • 5:£1.0800
    • 25:£0.9800
    • 100:£0.7510
    • 250:£0.7070
    • 500:£0.6630
    FDS89141
    DISTI # 2083349    		ON SemiconductorMOSFET, NN CH, 100V, 3.5A, 8SOIC
    RoHS: Compliant    		0
    • 1:$2.4000
    • 10:$2.0400
    • 100:$1.5700
    • 500:$1.3900
    • 1000:$1.1000
    • 2500:$0.9690
    • 10000:$0.9330
    Bild Teil # Beschreibung
    FDS8984-F085

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    		 Neu und Original
    FDS8447-CUT TAPE

    Mfr.#: FDS8447-CUT TAPE

    OMO.#: OMO-FDS8447-CUT-TAPE-1190

    		 Neu und Original
    FDS8958A-CUT TAPE

    Mfr.#: FDS8958A-CUT TAPE

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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von FDS89141 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,85 $
    0,85 $
    10
    0,81 $
    8,08 $
    100
    0,77 $
    76,53 $
    500
    0,72 $
    361,40 $
    1000
    0,68 $
    680,30 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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