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Teil # | Mfg. | Beschreibung | Aktie | Preis |
---|---|---|---|---|
RFP25N05L DISTI # RFP25N05L | Renesas Electronics Corporation | - Bulk (Alt: RFP25N05L) RoHS: Not Compliant Min Qty: 236 Container: Bulk | Americas - 0 |
|
RFP25N05L | Harris Semiconductor | Power Field-Effect Transistor, 25A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 1 |
|
RFP25N05L | Harris Semiconductor | 58 | ||
RFP25N05L | Infineon Technologies AG | POWER FIELD-EFFECT TRANSISTOR, 25A I(D), 50V, 0.056OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 9 |
|
RFP25N05L | Harris Semiconductor | POWER FIELD-EFFECT TRANSISTOR, 25A I(D), 50V, 0.056OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 7 |
|
RFP25N05L | Harris Semiconductor | POWER FIELD-EFFECT TRANSISTOR, 25A I(D), 50V, 0.056OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 30 |
|
Bild | Teil # | Beschreibung |
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Mfr.#: RFP22N10 OMO.#: OMO-RFP22N10 |
MOSFET N-Ch Power MOSFET 100V/22a/0.080 Ohm | |
Mfr.#: RFP2N10L OMO.#: OMO-RFP2N10L |
MOSFET TO-220AB N-Ch Power | |
Mfr.#: RFP23N06LE OMO.#: OMO-RFP23N06LE-1190 |
Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
Mfr.#: RFP250-270RM OMO.#: OMO-RFP250-270RM-1190 |
Neu und Original | |
Mfr.#: RFP250-50TC OMO.#: OMO-RFP250-50TC-1190 |
Neu und Original | |
Mfr.#: RFP250250-4AA10 OMO.#: OMO-RFP250250-4AA10-1190 |
Neu und Original | |
Mfr.#: RFP25N05+L OMO.#: OMO-RFP25N05-L-1190 |
Power Field-Effect Transistor, 25A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
Mfr.#: RFP25N05C OMO.#: OMO-RFP25N05C-1190 |
Neu und Original | |
Mfr.#: RFP2N18L OMO.#: OMO-RFP2N18L-1190 |
Neu und Original | |
Mfr.#: RFP20100RP OMO.#: OMO-RFP20100RP-1190 |
INSTOCK |