RFP25N05L

RFP25N05L
Mfr. #:
RFP25N05L
Hersteller:
Rochester Electronics, LLC
Beschreibung:
- Bulk (Alt: RFP25N05L)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RFP25N05L Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
RFP25N05, RFP25N, RFP25, RFP2, RFP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
RFP25N05L
DISTI # RFP25N05L
Renesas Electronics Corporation- Bulk (Alt: RFP25N05L)
RoHS: Not Compliant
Min Qty: 236
Container: Bulk
Americas - 0
  • 2360:$1.2802
  • 1180:$1.2974
  • 708:$1.3350
  • 472:$1.3748
  • 236:$1.4171
RFP25N05LHarris SemiconductorPower Field-Effect Transistor, 25A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Not Compliant
1
  • 1000:$1.4000
  • 500:$1.4700
  • 100:$1.5300
  • 25:$1.5900
  • 1:$1.7200
RFP25N05LHarris Semiconductor 58
    RFP25N05LInfineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 25A I(D), 50V, 0.056OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB9
    • 4:$2.3000
    • 1:$3.4500
    RFP25N05LHarris SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 25A I(D), 50V, 0.056OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB7
    • 4:$2.3000
    • 1:$3.4500
    RFP25N05LHarris SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 25A I(D), 50V, 0.056OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB30
    • 31:$2.3000
    • 10:$2.5300
    • 1:$3.4500
    Bild Teil # Beschreibung
    RFP22N10

    Mfr.#: RFP22N10

    OMO.#: OMO-RFP22N10

    MOSFET N-Ch Power MOSFET 100V/22a/0.080 Ohm
    RFP2N10L

    Mfr.#: RFP2N10L

    OMO.#: OMO-RFP2N10L

    MOSFET TO-220AB N-Ch Power
    RFP23N06LE

    Mfr.#: RFP23N06LE

    OMO.#: OMO-RFP23N06LE-1190

    Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RFP250-270RM

    Mfr.#: RFP250-270RM

    OMO.#: OMO-RFP250-270RM-1190

    Neu und Original
    RFP250-50TC

    Mfr.#: RFP250-50TC

    OMO.#: OMO-RFP250-50TC-1190

    Neu und Original
    RFP250250-4AA10

    Mfr.#: RFP250250-4AA10

    OMO.#: OMO-RFP250250-4AA10-1190

    Neu und Original
    RFP25N05+L

    Mfr.#: RFP25N05+L

    OMO.#: OMO-RFP25N05-L-1190

    Power Field-Effect Transistor, 25A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RFP25N05C

    Mfr.#: RFP25N05C

    OMO.#: OMO-RFP25N05C-1190

    Neu und Original
    RFP2N18L

    Mfr.#: RFP2N18L

    OMO.#: OMO-RFP2N18L-1190

    Neu und Original
    RFP20100RP

    Mfr.#: RFP20100RP

    OMO.#: OMO-RFP20100RP-1190

    INSTOCK
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von RFP25N05L dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,92 $
    1,92 $
    10
    1,82 $
    18,24 $
    100
    1,73 $
    172,83 $
    500
    1,63 $
    816,10 $
    1000
    1,54 $
    1 536,20 $
    Beginnen mit
    Neueste Produkte
    • IO-Link™ Devices
      Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
    • Large Diameter Clear Hole Spacers
      RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
    • WE-ExB Series Common Mode Power Line Choke
      Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
    • CPI2-B1-REU Production Device Programmer
      Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
    • CFSH05-20L Schottky Diode
      Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.
    Top