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BUK7535-55A,127

BUK7535-55A,127
Mfr. #:
BUK7535-55A,127
Hersteller:
Nexperia
Beschreibung:
IGBT Transistors MOSFET RAIL PWR-MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BUK7535-55A,127 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BUK7535-55A,127 DatasheetBUK7535-55A,127 Datasheet (P4-P6)BUK7535-55A,127 Datasheet (P7-P9)BUK7535-55A,127 Datasheet (P10-P12)BUK7535-55A,127 Datasheet (P13-P15)
ECAD Model:
Produkteigenschaft
Attributwert
Tags
BUK7535-55A, BUK7535-5, BUK7535, BUK753, BUK75, BUK7, BUK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 55V 35A 3-Pin(3+Tab) TO-220AB Tube
***et
Transistor MOSFET N-Channel 55V 35A 3-Pin SOT-78A
***ark
N Channel Mosfet, Trench Automotive, 55V, 23A, 3To220ab
***or
PFET, 35A I(D), 55V, 0.035OHM, 1
***peria
N-channel TrenchMOS standard level FET
*** Americas
STANDARD MARKING * HORIZONTAL, RAIL PACK
***ark
Trans MOSFET N-CH 55V 42A Automotive 3-Pin(3+Tab) TO-220AB Rail
***ponent Stockers USA
42 A 55 V 0.028 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***et
Transistor MOSFET N-Channel 55V 42A 3-Pin SOT-78A
***or
PFET, 42A I(D), 55V, 0.028OHM, 1
***peria
N-channel TrenchMOS standard level FET
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 29A;TO-220AB;PD 68W;VGS +/-20V
***ure Electronics
Single N-Channel 55 V 0.04 Ohm 34 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***essParts.Net
INTERNATIONAL RECTIFIER IRFZ34NPBF / MOSFET N-CH 55V 29A TO-220AB
***fin
Transistor NPN Field Effect IRFZ34N/IRFZ34NPBF INTERNATIONAL RECTIFIER RoHS Ampere=26 V=55 TO220
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:29A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 29 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 20 / Fall Time ns = 40 / Rise Time ns = 49 / Turn-OFF Delay Time ns = 31 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 68
***nell
MOSFET, N, 55V, 26A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:26A; Resistance, Rds On:0.04ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:100A; Device Marking:IRFZ34NPBF; Lead Spacing:2.54mm; No. of Pins:3; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:56W; Power, Pd:56W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:2.7°C/W; Transistors, No. of:1; Voltage, Vds Max:55V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.035Ohm;ID 30A;TO-220AB;PD 68W;VGS +/-16V
***eco
Transistor MOSFET N Channel 55 Volt 30 Amp 3 Pin 3+ Tab TO-220 AB
***klin Elektronik
INFINEON THT MOSFET NFET 55V 30A 35mΩ 175°C TO-220 IRLZ34N
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 55 V 0.06 Ohm 25 nC HEXFET® Power Mosfet - TO-220-3
***ter Electronics
MOSFET, 55V, 27A, 35 MOHM, 16.7 NC QG, LOGIC LEVEL, TO-220AB
***p One Stop
Trans MOSFET N-CH 55V 30A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 68 W
***roFlash
Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ment14 APAC
MOSFET, N, 55V, 27A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:55V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:56W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.7°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:56W; Power Dissipation Pd:56W; Pulse Current Idm:110A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
***ure Electronics
N-Channel 60 V 0.035 Ohm Logic Level UltraFET Power Mosfet-TO-220AB
***Yang
Trans MOSFET N-CH 60V 35A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 35A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, 60V, 33A; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd:
***Yang
PWR MOS ULTRAFET 60V/30A/0.042 OHMS N-CH LL TO-220AB - Bulk
***ser
MOSFETs 20a, 60V, 0.043 Ohm Logic Level N-Ch
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:29A; On Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-20 ;RoHS Compliant: Yes
***i-Key
MOSFET N-CH 55V 45A TO-220
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
Teil # Mfg. Beschreibung Aktie Preis
BUK7535-55A,127
DISTI # 568-9802-5-ND		NexperiaMOSFET N-CH 55V 35A TO220AB
RoHS: Compliant
Min Qty: 5000
Container: Tube		Limited Supply - Call
    BUK7535-55A127
    DISTI # BUK7535-55A127    		Avnet, Inc.- Bulk (Alt: BUK7535-55A127)
    Min Qty: 1191
    Container: Bulk    		Americas - 0
    • 11910:$0.2529
    • 5955:$0.2589
    • 3573:$0.2649
    • 2382:$0.2719
    • 1191:$0.2759
    BUK7535-55A127NXP SemiconductorsNow Nexperia BUK7535-55A - Power Field-Effect Transistor, 35A I(D), 55V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Not Compliant    		9896
    • 1000:$0.2800
    • 500:$0.2900
    • 100:$0.3000
    • 25:$0.3200
    • 1:$0.3400
    Bild Teil # Beschreibung
    BUK7535

    Mfr.#: BUK7535

    OMO.#: OMO-BUK7535-1190

    		 Neu und Original
    BUK7535-100A

    Mfr.#: BUK7535-100A

    OMO.#: OMO-BUK7535-100A-1190

    		 MOSFET RAIL PWR-MOS
    BUK7535-100A127

    Mfr.#: BUK7535-100A127

    OMO.#: OMO-BUK7535-100A127-1190

    		 Now Nexperia BUK7535-100A - Power Field-Effect Transistor, 41A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    BUK7535-55

    Mfr.#: BUK7535-55

    OMO.#: OMO-BUK7535-55-1190

    		 Neu und Original
    BUK7535-55A

    Mfr.#: BUK7535-55A

    OMO.#: OMO-BUK7535-55A-1190

    		 MOSFET RAIL PWR-MOS
    BUK7535-55A127

    Mfr.#: BUK7535-55A127

    OMO.#: OMO-BUK7535-55A127-1190

    		 - Bulk (Alt: BUK7535-55A127)
    BUK7535-100A,127

    Mfr.#: BUK7535-100A,127

    OMO.#: OMO-BUK7535-100A-127-NEXPERIA

    		 IGBT Transistors MOSFET RAIL PWR-MOS
    BUK7535-55A,127

    Mfr.#: BUK7535-55A,127

    OMO.#: OMO-BUK7535-55A-127-NEXPERIA

    		 IGBT Transistors MOSFET RAIL PWR-MOS
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von BUK7535-55A,127 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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