MRF6S20010GNR1

Mfr. #:: MRF6S20010GNR1
Hersteller:: NXP / Freescale
Beschreibung:: RF MOSFET Transistors HV6 2GHZ 10W
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: MRF6S20010GNR1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: NXP

Produktkategorie:: HF-MOSFET-Transistoren

RoHS:: E

Polarität des Transistors:: N-Kanal

Technologie:: Si

Vds - Drain-Source-Durchbruchspannung:: 68 V

Minimale Betriebstemperatur:: - 65 C

Maximale Betriebstemperatur:: + 150 C

Montageart:: SMD/SMT

Paket / Koffer:: TO-270

Verpackung:: Spule

Aufbau:: Single

Höhe:: 2.08 mm

Länge:: 9.7 mm

Serie:: MRF6S20010N

Breite:: 6.15 mm

Marke:: NXP / Freescale

Kanalmodus:: Erweiterung

Feuchtigkeitsempfindlich:: ja

Produktart:: HF-MOSFET-Transistoren

Werkspackungsmenge:: 500

Unterkategorie:: MOSFETs

Vgs - Gate-Source-Spannung:: - 0.5 V, 12 V

Teil # Aliase:: 935313674528

Gewichtseinheit:: 0.019330 oz

Tags: MRF6S20, MRF6S2, MRF6S, MRF6, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF6S20010GNR1 Bewertungen und Rezensionen

B***r

2019-03-16

E**o

The product corresponds to the description. I did not check in the work.

2019-01-27

MRF6S20010GNR1 Beschreibung

***W: RF Power Transistor,1600 to 2200 MHz, 10 W, Typ Gain in dB is 15.5 @ 2170 MHz, 28 V, LDMOS, SOT1731

*** Semiconductors SCT: GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V, FM2

***et: Transistor RF FET N-CH 68V 1600MHz to 2200MHz 3-Pin TO-270G T/R

***ure Electronics: MRF6S20010 Series 28 V 2170 MHz RF Power Field Effect Transistor - TO-270G-2

***p One Stop Global: Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R

***i-Key: MOSFET RF N-CH 28V 10W TO2702 GW

*** Electronic Components: RF MOSFET Transistors HV6 2GHZ 10W

***or: RF MOSFET LDMOS 28V TO270-2 GULL

***ment14 APAC: RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G

***i-Key Marketplace: RF S BAND, N-CHANNEL POWER MOSFE

***nell: RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G; Drain Source Voltage Vds: 68V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 2.2GHz; Operating Frequency Max: 1.6GHz; RF Transistor Case: TO-270G; No. of

***W: RF Power Transistor,450 to 1500 MHz, 10 W, Typ Gain in dB is 18 @ 960 MHz, 28 V, LDMOS, SOT1732

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V, FM2F

***ment14 APAC: RF MOSFET, N CHANNEL, 68V, TO-270; Drain Source Voltage Vds:68V; RF Transistor Case:TO-270; MSL:MSL 3 - 168 hours; Termination Type:SMD; Gain:18dB; Peak Reflow Compatible (260 C):Yes; Transistor Polarity:N Channel

***ark: RF MOSFET, N CHANNEL, 68V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:68V; RF Transistor Case:TO-270; Gain:18dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:900MHz ;RoHS Compliant: Yes

***escale Semiconductor: Single W-CDMA Lateral N-Channel RF Power MOSFET, 2300-2700 MHz, 3 W Avg., 28 V

***et: Transistor RF FET N-CH 68V 2300MHz to 2700MHz 3-Pin TO-270 T/R

*** Electronic Components: RF MOSFET Transistors HV6 2.7GHZ 15W

***S: French Electronic Distributor since 1988

***i-Key Marketplace: RF S BAND, N-CHANNEL , TO-270AA

***escale Semiconductor: Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 14 W Avg., 28 V

***W: RF Power Transistor,470 to 960 MHz, 60 W, Typ Gain in dB is 21.1 @ 880 MHz, 28 V, LDMOS, SOT1732

***ark: RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:66V; RF Transistor Case:TO-270; Gain:21.1dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:880MHz ;RoHS Compliant: Yes

***nell: TRANSISTOR, RF, 66V, TO-270-2; Drain Source Voltage Vds: 66VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 470MHz; Operating Frequency Max: 960MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***escale Semiconductor: Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 10 W Avg., 28 V

***W: RF Power Transistor,865 to 960 MHz, 45 W, Typ Gain in dB is 22.1 @ 880 MHz, 28 V, LDMOS, SOT1732

***ment14 APAC: RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF MOSFET; Drain Source Voltage Vds:66V; Operating Frequency Min:920MHz; Operating Frequency Max:960MHz; RF Transistor Case:TO-270; No. of Pins:2; Filter Terminals:Surface Mount

***ark: RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:66V; RF Transistor Case:TO-270; Gain:22.1dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:880MHz ;RoHS Compliant: Yes

*** Electronic Components: RF MOSFET Transistors WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V

***W: RF Power Transistor,1.8 to 600 MHz, 150 W, Typ Gain in dB is 26.3 @ 230 MHz, 50 V, LDMOS, SOT1736

***nell: TRANSISTOR, RF, 133V, TO-270WB-4; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 952W; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: TO-270WB; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***W: RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F

***nell: TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
MRF6S20010GNR1 DISTI # 11962144	NXP Semiconductors	Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R	349	2:$46.9500
MRF6S20010GNR1 DISTI # MRF6S20010GNR1CT-ND	NXP Semiconductors	FET RF 68V 2.17GHZ TO270-2 GW RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1311In Stock	100:$31.3604 10:$36.1180 1:$38.7100
MRF6S20010GNR1 DISTI # MRF6S20010GNR1DKR-ND	NXP Semiconductors	FET RF 68V 2.17GHZ TO270-2 GW RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1311In Stock	100:$31.3604 10:$36.1180 1:$38.7100
MRF6S20010GNR1 DISTI # MRF6S20010GNR1TR-ND	NXP Semiconductors	FET RF 68V 2.17GHZ TO270-2 GW RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	1000In Stock	500:$27.9272
MRF6S20010GNR1 DISTI # MRF6S20010GNR1	NXP Semiconductors	Trans MOSFET N-CH 68V 3-Pin TO-270 T/R (Alt: MRF6S20010GNR1) RoHS: Compliant Min Qty: 500 Container: Tape and Reel	Asia - 0	500:$25.6930 1000:$24.9793 1500:$24.3042 2500:$23.6646 5000:$23.3573 12500:$23.0578 25000:$22.4814
MRF6S20010GNR1 DISTI # MRF6S20010GNR1	NXP Semiconductors	Trans MOSFET N-CH 68V 3-Pin TO-270 T/R - Tape and Reel (Alt: MRF6S20010GNR1) RoHS: Compliant Min Qty: 500 Container: Reel	Americas - 0	500:$30.5900 1000:$29.3900 2000:$28.1900 3000:$27.1900 5000:$26.6900
MRF6S20010GNR1 DISTI # 61AC0767	NXP Semiconductors	RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G,Drain Source Voltage Vds:68V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:2.2GHz,Operating Frequency Max:1.6GHz,RF Transistor Case:TO-270G,No. of Pins:2Pins,, RoHS Compliant: Yes	479	1:$38.7100 10:$36.1200 25:$32.7400 50:$32.0500 100:$31.3600 250:$28.9800
MRF6S20010GNR1 DISTI # 81K3163	NXP Semiconductors	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)	0
MRF6S20010GNR1	NXP Semiconductors	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA RoHS: Compliant	500	1000:$30.8800 500:$32.5100 100:$33.8400 25:$35.2900 1:$38.0100
MRF6S20010GNR1	Freescale Semiconductor	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA RoHS: Compliant	1382	1000:$30.8800 500:$32.5100 100:$33.8400 25:$35.2900 1:$38.0100
MRF6S20010GNR1 DISTI # 841-MRF6S20010GNR1	NXP Semiconductors	RF MOSFET Transistors HV6 2GHZ 10W RoHS: Compliant	229	1:$38.7100 5:$36.7500 10:$36.1200 25:$32.7400 100:$31.3600 250:$28.9800 500:$27.9300
MRF6S20010GNR1 DISTI # MRF6S20010GNR1	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	415	1:$46.9100 10:$42.4000 25:$40.0900
MRF6S20010GNR1 DISTI # 2890603	NXP Semiconductors	RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G RoHS: Compliant	479	1:$61.2600 10:$57.1600 100:$49.6300
MRF6S20010GNR1 DISTI # 2890603	NXP Semiconductors	RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G RoHS: Compliant	479	1:£29.2800 5:£27.8000 10:£24.7700 50:£23.3500 100:£21.9200

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Verfügbarkeit

Aktie:: 182
Auf Bestellung:: 2165
Menge eingeben:

Der aktuelle Preis von MRF6S20010GNR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~38,71 $~~; ~~38,71 $~~

5: ~~36,75 $~~; ~~183,75 $~~

10: ~~36,12 $~~; ~~361,20 $~~

25: ~~32,74 $~~; ~~818,50 $~~

100: ~~31,36 $~~; ~~3 136,00 $~~

250: ~~28,98 $~~; ~~7 245,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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MRF6S20010GNR1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

B***r

E**o

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes