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A2V07H525-04NR6

A2V07H525-04NR6
Mfr. #:
A2V07H525-04NR6
Hersteller:
NXP Semiconductors
Beschreibung:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 595-851 MHz, 120 W Avg., 48 V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
A2V07H525-04NR6 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
A2V07H525-04NR6 Mehr Informationen A2V07H525-04NR6 Product Details
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
Dualer N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
2.8 A
Vds - Drain-Source-Durchbruchspannung:
- 500 mV, 105 V
Gewinnen:
17.5 dB
Ausgangsleistung:
120 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
OM-1230-4L
Verpackung:
Spule
Arbeitsfrequenz:
595 MHz to 851 MHz
Typ:
HF-Leistungs-MOSFET
Marke:
NXP Semiconductors
Anzahl der Kanäle:
2 Channel
Feuchtigkeitsempfindlich:
ja
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
150
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 6 V, 10 V
Vgs th - Gate-Source-Schwellenspannung:
1.3 V
Teil # Aliase:
935339924528
Gewichtseinheit:
0.186557 oz
Tags
A2V0, A2V
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Airfast RF LDMOS Wideband Integrated power amplifier, 575-960 MHz, 525 W, 48 V
***ark
Airfast RF Power LDMOS Transistor, 595-851 MHz, 120 W Avg., 48 V / Reel 13" Q2/T3 in Drypack RoHS Compliant: Yes
***W
RF Power Transistor, 0.595 to 0.851 GHz, 602 W P3dB, Typ Gain in dB is 17.5 @ 623 MHz, 48 V, SOT1816-1, LDMOS
***i-Key
AIRFAST RF LDMOS WIDEBAND INTEGR
Teil # Mfg. Beschreibung Aktie Preis
A2V07H525-04NR6
DISTI # A2V07H525-04NR6-ND		NXP SemiconductorsAIRFAST RF LDMOS WIDEBAND INTEGR
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 150:$136.6405
A2V07H525-04NR6
DISTI # A2V07H525-04NR6		Avnet, Inc.Airfast RF LDMOS Wideband Integrated power amplifier, 575-960 MHz, 525 W, 48 V - Tape and Reel (Alt: A2V07H525-04NR6)
RoHS: Compliant
Min Qty: 150
Container: Reel		Americas - 0
  • 1500:$130.6900
  • 900:$133.1900
  • 600:$138.1900
  • 300:$143.7900
  • 150:$149.6900
A2V07H525-04NR6
DISTI # 17AC3550		NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTOR, 595-851 MHZ, 120 W AVG., 48 V TR0
  • 25:$128.4300
  • 10:$136.6400
  • 5:$138.7000
  • 1:$140.7500
A2V07H525-04NR6
DISTI # 771-A2V07H525-04NR6		NXP SemiconductorsRF MOSFET Transistors A2V07H525-04N/FM4F///REEL 13 Q2 DP
RoHS: Compliant		0
  • 150:$127.1100
A2V07H525-04NR6
DISTI # A2V07H525-04NR6		NXP SemiconductorsRF & MW POWER AMPLIFIER
RoHS: Compliant		0
  • 150:$136.0900
Bild Teil # Beschreibung
A2V07H525-04NR6

Mfr.#: A2V07H525-04NR6

OMO.#: OMO-A2V07H525-04NR6

 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 595-851 MHz, 120 W Avg., 48 V
A2V07H525-04NR6

Mfr.#: A2V07H525-04NR6

OMO.#: OMO-A2V07H525-04NR6-NXP-SEMICONDUCTORS

 AIRFAST RF LDMOS WIDEBAND INTEGR
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von A2V07H525-04NR6 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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