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F3L15MR12W2M1B69BOMA1

F3L15MR12W2M1B69BOMA1
Mfr. #:
F3L15MR12W2M1B69BOMA1
Hersteller:
Infineon Technologies
Beschreibung:
Discrete Semiconductor Modules
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
F3L15MR12W2M1B69BOMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
F3L15MR12W2M1B69BOMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
Diskrete Halbleitermodule
RoHS:
Y
Produkt:
Leistungs-MOSFET-Module
Typ:
CoolSiC-MOSFET
Vf - Durchlassspannung:
4.6 V at 75 A
Vgs - Gate-Source-Spannung:
- 10 V, 20 V
Montageart:
Schraubbefestigung
Paket / Koffer:
AG-EASY2BM-2
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Tablett
Aufbau:
3-Level
Marke:
Infineon-Technologien
Polarität des Transistors:
N-Kanal
Abfallzeit:
18 ns
Id - Kontinuierlicher Drainstrom:
75 A
Produktart:
Diskrete Halbleitermodule
Rds On - Drain-Source-Widerstand:
15 mOhms
Anstiegszeit:
13 ns
Werkspackungsmenge:
15
Unterkategorie:
Diskrete Halbleitermodule
Handelsname:
EasyPACK CoolSiC MOSFET
Typische Ausschaltverzögerungszeit:
64 ns
Typische Einschaltverzögerungszeit:
24 ns
Vds - Drain-Source-Durchbruchspannung:
1200 V
Vgs th - Gate-Source-Schwellenspannung:
3.45 V
Teil # Aliase:
F3L15MR12W2M1_B69 SP001710612
Tags
F3L15, F3L1, F3L
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
1200V CoolSiC™ Modules
Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
Bild Teil # Beschreibung
C2M0040120D

Mfr.#: C2M0040120D

OMO.#: OMO-C2M0040120D

 MOSFET SiC Power MOSFET 1200V, 60A
C2M0040120D

Mfr.#: C2M0040120D

OMO.#: OMO-C2M0040120D-WOLFSPEED

 MOSFET N-CH 1200V 60A TO-247
Verfügbarkeit
Aktie:
20
Auf Bestellung:
2003
Menge eingeben:
Der aktuelle Preis von F3L15MR12W2M1B69BOMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
171,13 $
171,13 $
5
167,01 $
835,05 $
10
162,86 $
1 628,60 $
25
160,58 $
4 014,50 $
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