STB10NK60ZT4

STB10NK60ZT4
Mfr. #:
STB10NK60ZT4
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STB10NK60ZT4 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STB10NK60ZT4 Mehr Informationen STB10NK60ZT4 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
10 A
Rds On - Drain-Source-Widerstand:
750 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
115 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
SuperMESH
Verpackung:
Spule
Serie:
STB10NK60Z
Transistortyp:
1 N-Channel
Typ:
MOSFET
Marke:
STMicroelectronics
Vorwärtstranskonduktanz - Min:
7.8 S
Abfallzeit:
30 ns
Produktart:
MOSFET
Anstiegszeit:
20 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
55 ns
Typische Einschaltverzögerungszeit:
20 ns
Gewichtseinheit:
0.139332 oz
Tags
STB10NK60Z, STB10NK, STB10N, STB10, STB1, STB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***itex
Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 115W; -55+150 deg.C; SMD; TO263 (D2PAK)
***icroelectronics
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in D2PAK package
***th Star Micro
Transistor MOSFET N-CH 600V 10A 3-Pin (2+Tab) D2PAK T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
MOSFET, N CHANNEL, 600V, 10A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:4.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
STB10NK60ZT4
DISTI # 497-6544-1-ND
STMicroelectronicsMOSFET N-CH 600V 10A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1048In Stock
  • 500:$1.8770
  • 100:$2.3180
  • 10:$2.8270
  • 1:$3.1700
STB10NK60ZT4
DISTI # 497-6544-6-ND
STMicroelectronicsMOSFET N-CH 600V 10A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1048In Stock
  • 500:$1.8770
  • 100:$2.3180
  • 10:$2.8270
  • 1:$3.1700
STB10NK60ZT4
DISTI # 497-6544-2-ND
STMicroelectronicsMOSFET N-CH 600V 10A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
1000In Stock
  • 1000:$1.5918
STB10NK60ZT4
DISTI # STB10NK60ZT4
STMicroelectronicsTrans MOSFET N-CH 600V 10A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB10NK60ZT4)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$1.3900
  • 2000:$1.3900
  • 4000:$1.2900
  • 6000:$1.2900
  • 10000:$1.1900
STB10NK60ZT4
DISTI # 33R1094
STMicroelectronicsMOSFET, N CHANNEL, 600V, 10A, D2PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.65ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.75V RoHS Compliant: Yes75
  • 1:$2.9400
  • 10:$2.5000
  • 100:$2.0000
  • 500:$1.7500
STB10NK60ZT4
DISTI # 511-STB10NK60Z
STMicroelectronicsMOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH
RoHS: Compliant
650
  • 1:$2.9400
  • 10:$2.5000
  • 100:$2.0000
  • 500:$1.7500
  • 1000:$1.4500
  • 2000:$1.3500
  • 5000:$1.3000
STB10NK60ZT4
DISTI # 6875175
STMicroelectronicsMOSFET N-CH 600V 10A SUPERMESH D2PAK, PK350
  • 5:£2.4220
  • 25:£1.9260
  • 50:£1.7360
  • 125:£1.5420
  • 250:£1.5120
STB10NK60ZT4
DISTI # 6875175P
STMicroelectronicsMOSFET N-CH 600V 10A SUPERMESH D2PAK, RL145
  • 25:£1.9260
  • 50:£1.7360
  • 125:£1.5420
  • 250:£1.5120
STB10NK60ZT4ST Microwave CorporationPower Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
Americas - 1000
    STB10NK60ZT4
    DISTI # 1751968
    STMicroelectronicsMOSFET, N CH, 600V, 10A, D2PAK
    RoHS: Compliant
    75
    • 5:£2.0200
    • 25:£1.7400
    • 100:£1.5300
    • 250:£1.5100
    • 500:£1.3400
    STB10NK60ZT4
    DISTI # 1751968
    STMicroelectronicsMOSFET, N CH, 600V, 10A, D2PAK
    RoHS: Compliant
    78
    • 1:$3.6800
    Bild Teil # Beschreibung
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    OMO.#: OMO-MURS160T3G

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    Logic Gates Quad 2-Input
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    OMO.#: OMO-CD4071BM

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    Film Capacitors .001uF 20% 275volts
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    Mfr.#: MURS160T3G

    OMO.#: OMO-MURS160T3G-ON-SEMICONDUCTOR

    Rectifiers 600V 1A Ultrafast
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    Mfr.#: CD40106BPWR

    OMO.#: OMO-CD40106BPWR-TEXAS-INSTRUMENTS

    Neu und Original
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    Neu und Original
    Verfügbarkeit
    Aktie:
    997
    Auf Bestellung:
    2980
    Menge eingeben:
    Der aktuelle Preis von STB10NK60ZT4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,94 $
    2,94 $
    10
    2,50 $
    25,00 $
    100
    2,00 $
    200,00 $
    500
    1,75 $
    875,00 $
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