IXTP05N100M

IXTP05N100M
Mfr. #:
IXTP05N100M
Hersteller:
IXYS
Beschreibung:
Darlington Transistors MOSFET 0.5 Amps 1000V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTP05N100M Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTP05N100M DatasheetIXTP05N100M Datasheet (P4)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
FETs - Einzeln
Serie
IXTP05N100
Verpackung
Rohr
Gewichtseinheit
0.012346 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
25 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
28 ns
Anstiegszeit
19 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
700 mA
Vds-Drain-Source-Breakdown-Voltage
1000 V
Vgs-th-Gate-Source-Threshold-Voltage
4.5 V
Rds-On-Drain-Source-Widerstand
15 Ohms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
40 ns
Typische-Einschaltverzögerungszeit
11 ns
Qg-Gate-Ladung
7.8 nC
Vorwärts-Transkonduktanz-Min
0.55 S
Kanal-Modus
Erweiterung
Tags
IXTP05, IXTP0, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 1000V 700MA TO-220
Teil # Mfg. Beschreibung Aktie Preis
IXTP05N100M
DISTI # IXTP05N100M-ND
IXYS CorporationMOSFET N-CH 1000V 700MA TO-220
RoHS: Compliant
Min Qty: 50
Container: Tube
Temporarily Out of Stock
  • 50:$2.4750
IXTP05N100M
DISTI # 747-IXTP05N100M
IXYS CorporationMOSFET 0.5 Amps 1000V
RoHS: Compliant
65
  • 1:$3.2200
  • 10:$2.8800
  • 25:$2.5000
  • 50:$2.4500
  • 100:$2.3600
  • 250:$2.0100
  • 500:$1.9100
  • 1000:$1.6100
  • 2500:$1.3800
Bild Teil # Beschreibung
IXTP02N120P

Mfr.#: IXTP02N120P

OMO.#: OMO-IXTP02N120P

MOSFET 500V to 1200V Polar Power MOSFET
IXTP06N120P

Mfr.#: IXTP06N120P

OMO.#: OMO-IXTP06N120P

MOSFET 0.6 Amps 1200V 32 Rds
IXTP01N100

Mfr.#: IXTP01N100

OMO.#: OMO-IXTP01N100-1190

Neu und Original
IXTP01N100D

Mfr.#: IXTP01N100D

OMO.#: OMO-IXTP01N100D-IXYS-CORPORATION

MOSFET N-CH 1KV .1A TO-220AB
IXTP08N120P

Mfr.#: IXTP08N120P

OMO.#: OMO-IXTP08N120P-IXYS-CORPORATION

MOSFET N-CH 1200V 800MA TO-220
IXTP05N100M

Mfr.#: IXTP05N100M

OMO.#: OMO-IXTP05N100M-IXYS-CORPORATION

Darlington Transistors MOSFET 0.5 Amps 1000V
IXTP02N50D

Mfr.#: IXTP02N50D

OMO.#: OMO-IXTP02N50D-IXYS-CORPORATION

Darlington Transistors MOSFET 0.2 Amps 500V 30 Rds
IXTP08N100D2

Mfr.#: IXTP08N100D2

OMO.#: OMO-IXTP08N100D2-IXYS-CORPORATION

IGBT Transistors MOSFET N-CH MOSFETS 1000V 800MA
IXTP02N120P

Mfr.#: IXTP02N120P

OMO.#: OMO-IXTP02N120P-IXYS-CORPORATION

IGBT Transistors MOSFET 500V to 1200V Polar Power MOSFET
IXTP05N100P

Mfr.#: IXTP05N100P

OMO.#: OMO-IXTP05N100P-IXYS-CORPORATION

MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on)
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von IXTP05N100M dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,07 $
2,07 $
10
1,97 $
19,66 $
100
1,86 $
186,30 $
500
1,76 $
879,75 $
1000
1,66 $
1 656,00 $
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