RQ3E120GNTB

Mfr. #:: RQ3E120GNTB
Hersteller:: Rohm Semiconductor
Beschreibung:: MOSFET 4.5V Drive Nch MOSFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: RQ3E120GNTB Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: RQ3E120GNTB Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: ROHM Halbleiter

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: HSMT-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 12 A

Rds On - Drain-Source-Widerstand:: 8.8 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 2.5 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 10 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 2 W

Aufbau:: Single

Verpackung:: Spule

Transistortyp:: 1 N-Channel

Marke:: ROHM Halbleiter

Vorwärtstranskonduktanz - Min:: 10 S

Abfallzeit:: 3.4 ns

Produktart:: MOSFET

Anstiegszeit:: 4.5 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 25.5 ns

Typische Einschaltverzögerungszeit:: 9.6 ns

Teil # Aliase:: RQ3E120GN

Tags: RQ3E120G, RQ3E12, RQ3E1, RQ3E, RQ3

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RQ3E120GNTB Beschreibung

***ical: Trans MOSFET N-CH 30V 12A Automotive 8-Pin HSMT EP T/R

***ure Electronics: RQ3E120GN Series 30 V 27 A 15 W Surface Mount N-Channel Power Mosfet - HSMT-8

***nell: MOSFET, N-CH, 30V, 27A, HSMT-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 27A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0067ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 15W; Transistor Case Style: HSMT; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

RQ3E120GNTB Mehr Informationen

Silicon Power MOSFETs: ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.

Medium Power MOSFETs: ROHM Medium Power MOSFETs are low ON-resistance devices useful for a wide range of applications. They feature a broad lineup with compact, high-power and complex types to meet various needs. They come in high-power small mold packages and typical applications are for DC/DC converters and load switches.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
RQ3E120GNTB DISTI # 30650036	ROHM Semiconductor	Trans MOSFET N-CH 30V 12A 8-Pin HSMT T/R RoHS: Compliant	3000	71:$0.3562
RQ3E120GNTB DISTI # RQ3E120GNTBCT-ND	ROHM Semiconductor	MOSFET N-CH 30V 12A 8-HSMT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5672In Stock	1000:$0.1734 500:$0.2243 100:$0.2855 10:$0.3820 1:$0.4500
RQ3E120GNTB DISTI # RQ3E120GNTBDKR-ND	ROHM Semiconductor	MOSFET N-CH 30V 12A 8-HSMT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5672In Stock	1000:$0.1734 500:$0.2243 100:$0.2855 10:$0.3820 1:$0.4500
RQ3E120GNTB DISTI # RQ3E120GNTBTR-ND	ROHM Semiconductor	MOSFET N-CH 30V 12A 8-HSMT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	30000:$0.1317 15000:$0.1336 6000:$0.1436 3000:$0.1535
RQ3E120GNTB DISTI # C1S625901169801	ROHM Semiconductor	Trans MOSFET N-CH 30V 12A 8-Pin HSMT T/R	3000	1000:$0.1760 100:$0.1850 50:$0.1980 10:$0.2850
RQ3E120GNTB DISTI # RQ3E120GNTB	ROHM Semiconductor	Trans N-CH 30V ±12A 8-Pin HSMT T/R (Alt: RQ3E120GNTB) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	5000:€0.1490 1000:€0.1520 500:€0.2230 250:€0.2640 100:€0.3030 25:€0.4320 5:€0.4590
RQ3E120GNTB DISTI # RQ3E120GNTB	ROHM Semiconductor	Trans N-CH 30V ±12A 8-Pin HSMT T/R - Tape and Reel (Alt: RQ3E120GNTB) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0
RQ3E120GNTB DISTI # 10AC8919	ROHM Semiconductor	MOSFET, N-CH, 30V, 27A, HSMT-8,Transistor Polarity:N Channel,Continuous Drain Current Id:27A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0067ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes	109	1000:$0.1710 500:$0.1870 250:$0.2040 100:$0.2200 50:$0.2670 25:$0.3140 10:$0.3620 1:$0.4340
RQ3E120GNTB DISTI # 755-RQ3E120GNTB	ROHM Semiconductor	MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant	7141	1:$0.4300 10:$0.3580 100:$0.2180 1000:$0.1690 3000:$0.1440 9000:$0.1340 24000:$0.1270 45000:$0.1240
RQ3E120GNTB	ROHM Semiconductor		75	25:$0.6300 6:$0.8400 1:$1.0500
RQ3E120GNTB DISTI # 2706634	ROHM Semiconductor	MOSFET, N-CH, 30V, 27A, HSMT-8 RoHS: Compliant	109	1000:$0.2620 500:$0.3390 100:$0.4310 10:$0.5760 1:$0.6800
RQ3E120GNTB DISTI # 2706634	ROHM Semiconductor	MOSFET, N-CH, 30V, 27A, HSMT-8	0	500:£0.1190 250:£0.1410 100:£0.1630 25:£0.2310 5:£0.2460
RQ3E120GNTB	ROHM Semiconductor		3000	1:¥4.4307 100:¥2.5122 1500:¥1.5927 3000:¥1.1866
RQ3E120GNTB	ROHM Semiconductor	MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant	Americas -
RQ3E120GNTB	ROHM Semiconductor	RoHS(ship within 1day)	94	1:$0.8200 10:$0.4800 50:$0.3000 100:$0.2600 500:$0.2200 1000:$0.2100

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	Mfr.#: ERJ2RKD3003X OMO.#: OMO-ERJ2RKD3003X-433	Res Thick Film 0402 300K Ohm 0.5% 0.063W(1/16W) ±100ppm/C Pad SMD Automotive T/R
	Mfr.#: NVT2002DP,118 OMO.#: OMO-NVT2002DP-118-NXP-SEMICONDUCTORS	Translation - Voltage Levels Interface IC
	Mfr.#: ADUM5020-5BRWZ OMO.#: OMO-ADUM5020-5BRWZ-ANALOG-DEVICES	isoPower 3kV, LowEMI, 500mW pwr, 5V
	Mfr.#: BD9D321EFJ-E2 OMO.#: OMO-BD9D321EFJ-E2-ROHM-SEMI	Voltage Regulators - Switching Regulators ICs, Power Management, Switching Regulators, Switching Regulators (Integrated FET), Buck Converters (Synchronous)

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1987
Menge eingeben:

Der aktuelle Preis von RQ3E120GNTB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,43 $~~; ~~0,43 $~~

10: ~~0,36 $~~; ~~3,58 $~~

100: ~~0,22 $~~; ~~21,80 $~~

1000: ~~0,17 $~~; ~~169,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

RQ3E120G 3
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RQ3E120GNTB

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes