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H7N1004DL-E

H7N1004DL-E
Mfr. #:
H7N1004DL-E
Hersteller:
Renesas Electronics Corporation
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
H7N1004DL-E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
H7N1004D, H7N1004, H7N1, H7N
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH Si 100V 25A 3-Pin(3+Tab) DPAK(L)-(2) Tube
***egrated Device Technology
Nch Single Power Mosfet 100V 25A 35Mohm DPAK(L)-(2)/To-251
***el Nordic
Contact for details
***(Formerly Allied Electronics)
NTD6414ANT4G N-channel MOSFET Transistor; 32 A; 100 V; 3-Pin DPAK
***emi
Single N-Channel Power MOSFET 100V, 32A, 37mΩ
***ure Electronics
NTD6414AN Series 100 V 37 mOhm Surface Mount N-Channel Power Mosfet - TO-252-3
***ark
Mosfet Transistor; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:32A; On Resistance Rds(On):0.03Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes
***nell
MOSFET,N CH,W DIODE,100V,32A,DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 100W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C
***emi
Power MOSFET 100V, 32A, 37 mohm, Single N-Channel, DPAK. Power MOSFET 100V 32A 37 mohm Single N-Channel DPAK
***et
Trans MOSFET N-CH 100V 32A 3-Pin(2+Tab) DPAK T/R
***ponent Stockers USA
32 A 100 V 0.037 ohm N-CHANNEL Si POWER MOSFET
***r Electronics
Power Field-Effect Transistor, 32A I(D), 100V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***emi
Single N-Channel Power MOSFET 100V, 32A, 37mΩ
***p One Stop
Trans MOSFET N-CH 100V 32A 3-Pin(3+Tab) IPAK Rail
***ponent Stockers USA
32 A 100 V 0.037 ohm N-CHANNEL Si POWER MOSFET
***r Electronics
Power Field-Effect Transistor, 32A I(D), 100V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***p One Stop Global
Trans MOSFET N-CH 100V 25A Automotive 3-Pin(2+Tab) DPAK T/R
***ure Electronics
Single N-Channel 100 V 100 W 55 nC Silicon Surface Mount Mosfet - TO-252-3
***ark
MOSFET, N-CH, 100V, 25A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***icroelectronics
N-Channel 100V - 0.033 Ohm - 25A - DPAK LOW GATE CHARGE StripFET(TM) POWER MOSFET
*** Source Electronics
MOSFET N-CH 100V 25A DPAK / Trans MOSFET N-CH 100V 25A 3-Pin(2+Tab) DPAK T/R
***va Crawler
N-channel 100 V, 0.033 Ohm typ., 25 A StripFET Power MOSFET in DPAK package
***ure Electronics
N-Channel 100 V 0.038 Ohm Surface Mount STripFET II Power MosFet - TO-252-3
***ark
MOSFET, N CHANNEL, 100V, 25A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:12.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 25A I(D), 100V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N CH, 100V, 25A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.5A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 100W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 25A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
N-Channel 100 V 0.035 Ohm Surface Mount STripFET II Power MosFet - TO-252-3
***r Electronics
Power Field-Effect Transistor, 25A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:100V; Cont Current Id:25A; On State Resistance:0.03ohm; Voltage Vgs Rds on Measurement:10V; Case Style:DPAK; Termination Type:SMD; On State Resistance @ Vgs = 4.5V:0.04ohm; On State resistance @ Vgs = 10V:0.035ohm; Rds Measurement Voltage:10V; Transistor Case Style:D-PAK
Teil # Mfg. Beschreibung Aktie Preis
H7N1004DSTR-ERenesas Electronics Corporation 2585
    Bild Teil # Beschreibung
    H7N1002LM

    Mfr.#: H7N1002LM

    OMO.#: OMO-H7N1002LM-1190

    		 Neu und Original
    H7N1002LSTL-E

    Mfr.#: H7N1002LSTL-E

    OMO.#: OMO-H7N1002LSTL-E-RENESAS-ELECTRONICS-AMERICA

    		 MOSFET N-CH 100V LDPAK
    H7N1004DS

    Mfr.#: H7N1004DS

    OMO.#: OMO-H7N1004DS-1190

    		 Neu und Original
    H7N1004DSTL-E

    Mfr.#: H7N1004DSTL-E

    OMO.#: OMO-H7N1004DSTL-E-1190

    		 Neu und Original
    H7N1004FM

    Mfr.#: H7N1004FM

    OMO.#: OMO-H7N1004FM-1190

    		 Neu und Original
    H7N1004FN

    Mfr.#: H7N1004FN

    OMO.#: OMO-H7N1004FN-1190

    		 Neu und Original
    H7N1004FN-E

    Mfr.#: H7N1004FN-E

    OMO.#: OMO-H7N1004FN-E-1190

    		 Power Field-Effect Transisto
    H7N1005DS

    Mfr.#: H7N1005DS

    OMO.#: OMO-H7N1005DS-1190

    		 Neu und Original
    H7N1005LD

    Mfr.#: H7N1005LD

    OMO.#: OMO-H7N1005LD-1190

    		 Neu und Original
    H7N1005LS

    Mfr.#: H7N1005LS

    OMO.#: OMO-H7N1005LS-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von H7N1004DL-E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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