SIHA11N80E-GE3

SIHA11N80E-GE3
Mfr. #:
SIHA11N80E-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 800V Vds 30V Vgs TO-220 FULLPAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHA11N80E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHA11N80E-GE3 DatasheetSIHA11N80E-GE3 Datasheet (P4-P6)SIHA11N80E-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SIHA11N80E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220FP-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
380 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
88 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
34 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Serie:
E
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
4.5 S
Abfallzeit:
18 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
55 ns
Typische Einschaltverzögerungszeit:
18 ns
Tags
SIHA1, SIHA, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 800V 12A 3-Pin TO-220FP
***ark
Mosfet, N-Ch, 800V, 12A, 150Deg C, 34W Rohs Compliant: Yes
***i-Key
MOSFET N-CH 800V 12A TO220
*** Europe
N-CH SINGLE 800V TO220FP
***S
new, original packaged
***
N-CHANNEL 800V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHA11N80E-GE3
DISTI # V99:2348_21764874
Vishay IntertechnologiesSIHA11N80E-GE3963
  • 2500:$1.6940
  • 1000:$1.7210
  • 500:$2.1140
  • 250:$2.3230
  • 100:$2.3880
  • 10:$2.9430
  • 1:$3.8643
SIHA11N80E-GE3
DISTI # V36:1790_21764874
Vishay IntertechnologiesSIHA11N80E-GE30
  • 1000000:$1.7370
  • 500000:$1.7400
  • 100000:$2.0920
  • 10000:$2.7480
  • 1000:$2.8600
SIHA11N80E-GE3
DISTI # SIHA11N80E-GE3-ND
Vishay SiliconixMOSFET N-CHAN 800V TO-220FP
RoHS: Compliant
Min Qty: 1
Container: Tube
954In Stock
  • 5000:$1.7123
  • 3000:$1.7791
  • 1000:$1.8728
  • 100:$2.6085
  • 25:$3.0100
  • 10:$3.1840
  • 1:$3.5400
SIHA11N80E-GE3
DISTI # 27527547
Vishay IntertechnologiesSIHA11N80E-GE3963
  • 2500:$1.6940
  • 1000:$1.7210
  • 500:$2.1140
  • 250:$2.3230
  • 100:$2.3880
  • 10:$2.9430
  • 4:$3.8643
SIHA11N80E-GE3
DISTI # SIHA11N80E-GE3
Vishay IntertechnologiesE Series Power MOSFET Single N-Channel 800V VDS ±30V 12A ID Thin Lead 3-Pin TO-220FP - Tape and Reel (Alt: SIHA11N80E-GE3)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 2000:$1.6900
  • 4000:$1.6900
  • 1000:$1.7900
SIHA11N80E-GE3
DISTI # SIHA11N80E-GE3
Vishay IntertechnologiesE Series Power MOSFET Single N-Channel 800V VDS ±30V 12A ID Thin Lead 3-Pin TO-220FP (Alt: SIHA11N80E-GE3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 500:€1.4900
  • 1000:€1.4900
  • 50:€1.5900
  • 100:€1.5900
  • 25:€1.7900
  • 10:€2.1900
  • 1:€2.7900
SIHA11N80E-GE3
DISTI # 78AC6507
Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, 150DEG C, 34W,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.38ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes1000
  • 500:$2.1400
  • 100:$2.4600
  • 50:$2.6400
  • 25:$2.8100
  • 10:$2.9900
  • 1:$3.6100
SIHA11N80E-GE3
DISTI # 78-SIHA11N80E-GE3
Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant
884
  • 1:$3.5700
  • 10:$2.9600
  • 100:$2.4400
  • 250:$2.3600
  • 500:$2.1200
SIHA11N80E-GE3
DISTI # 2932902
Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, 150DEG C, 34W1000
  • 500:£1.5400
  • 250:£1.7100
  • 100:£1.7700
  • 10:£2.1400
  • 1:£2.9200
SIHA11N80E-GE3
DISTI # 2932902
Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, 150DEG C, 34W
RoHS: Compliant
1000
  • 1000:$2.9300
  • 500:$3.0900
  • 250:$3.2800
  • 100:$3.5700
  • 10:$4.1200
  • 1:$4.7300
Bild Teil # Beschreibung
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Mfr.#: NUCLEO-F429ZI

OMO.#: OMO-NUCLEO-F429ZI

Development Boards & Kits - ARM STM32 Nucleo-144 development board with STM32F429ZI MCU, supports Arduino, ST Zio and morpho connectivity
RAC10-15SK/277

Mfr.#: RAC10-15SK/277

OMO.#: OMO-RAC10-15SK-277-RECOM-POWER

CONV AC/DC 10W 85-305VIN 15VOUT
RAC10-24SK/277

Mfr.#: RAC10-24SK/277

OMO.#: OMO-RAC10-24SK-277-RECOM-POWER

CONV AC/DC 10W 85-305VIN 24VOUT
OPA2192IDR

Mfr.#: OPA2192IDR

OMO.#: OMO-OPA2192IDR-TEXAS-INSTRUMENTS

Precision Amplifiers High Voltage, Rail-to-Rail Input/Output,Precision Op Amps, E-Trim(TM) Series 8-SOIC -40 to 125
NUCLEO-F429ZI

Mfr.#: NUCLEO-F429ZI

OMO.#: OMO-NUCLEO-F429ZI-STMICROELECTRONICS

NUCLEO DEV BOARD STM32F429ZI
RR03J68KTB

Mfr.#: RR03J68KTB

OMO.#: OMO-RR03J68KTB-TE-CONNECTIVITY-AMP

Metal Film Resistors - Through Hole RR03 5% 68K AMMO
CRCW0805470RFKEAC

Mfr.#: CRCW0805470RFKEAC

OMO.#: OMO-CRCW0805470RFKEAC-VISHAY-DALE

D12/CRCW0805-C 100 470R 1% ET1
TPSM84203EAB

Mfr.#: TPSM84203EAB

OMO.#: OMO-TPSM84203EAB-TEXAS-INSTRUMENTS

DC DC CONVERTER 3.3V
FRDM-KE16Z

Mfr.#: FRDM-KE16Z

OMO.#: OMO-FRDM-KE16Z-NXP-SEMICONDUCTORS

FREEDOM KE1XZ EVAL BRD
Verfügbarkeit
Aktie:
884
Auf Bestellung:
2867
Menge eingeben:
Der aktuelle Preis von SIHA11N80E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,57 $
3,57 $
10
2,96 $
29,60 $
100
2,44 $
244,00 $
250
2,36 $
590,00 $
500
2,12 $
1 060,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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