OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SIS452DN-T1-GE3

SIS452DN-T1-GE3
Mfr. #:
SIS452DN-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 12V 35A 1212-8 PPAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIS452DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SIS45, SIS4, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Trans MOSFET N-CH 12V 27.9A 8-Pin PowerPAK 1212 T/R
***i-Key
MOSFET N-CH 12V 35A 1212-8 PPAK
***
N-CHANNEL 12-V (D-S)
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.0026Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:3.8W; No. Of Pins:8Pins Rohs Compliant: Yes
***nell
MOSFET,N CH,DIODE,12V,35A,PPAK1212-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:12V; On State Resistance:2600µohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; Current Id Max:27.9A; Power Dissipation:3.8W
***ment14 APAC
MOSFET,N CH,DIODE,12V,35A,PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:12V; On Resistance Rds(on):2600µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; Current Id Max:27.9A; Voltage Vgs Max:20V
Teil # Mfg. Beschreibung Aktie Preis
SIS452DN-T1-GE3
DISTI # V72:2272_09216101		Vishay IntertechnologiesTrans MOSFET N-CH 12V 27.9A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		1
  • 75000:$0.4738
  • 30000:$0.4787
  • 15000:$0.4835
  • 6000:$0.4884
  • 3000:$0.4932
  • 1000:$0.4981
  • 500:$0.5030
  • 250:$0.5078
  • 100:$0.5127
  • 50:$0.5175
  • 25:$0.5750
  • 10:$0.6389
  • 1:$0.7640
SIS452DN-T1-GE3
DISTI # SIS452DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 12V 35A 1212-8 PPAK
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIS452DN-T1-GE3
    DISTI # SIS452DN-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 12V 35A 1212-8 PPAK
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SIS452DN-T1-GE3
      DISTI # SIS452DN-T1-GE3DKR-ND      		Vishay SiliconixMOSFET N-CH 12V 35A 1212-8 PPAK
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SIS452DN-T1-GE3
        DISTI # 86R3816        		Vishay IntertechnologiesN-CHANNEL 12-V (D-S) MOSFET
        RoHS: Not Compliant        		3000
        • 1:$0.4450
        • 3000:$0.4450
        • 6000:$0.4450
        • 12000:$0.4450
        • 18000:$0.4450
        • 30000:$0.4450
        SIS452DN-T1-GE3.
        DISTI # 23AC9587        		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.0026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power Dissipation Pd:3.8W,No. of Pins:8Pins RoHS Compliant: Yes
        RoHS: Compliant        		0
        • 30000:$0.4690
        • 18000:$0.4770
        • 12000:$0.4840
        • 6000:$0.5030
        • 3000:$0.5170
        • 1:$0.5300
        SIS452DN-T1-GE3
        DISTI # XSFT00000030941        		Vishay SiliconixS1W0 SERIES HIGH POWER LED EMITTER 6500K COOL WHITE80 CRI 271 LM MIN 0.7A
        RoHS: Compliant        		6000 in Stock0 on Order
        • 3000:$1.0100
        Bild Teil # Beschreibung
        SIS452DN-T1-GE3

        Mfr.#: SIS452DN-T1-GE3

        OMO.#: OMO-SIS452DN-T1-GE3

        		 MOSFET 12V Vds 20V Vgs PowerPAK 1212-8
        SIS452DN-T1-E3

        Mfr.#: SIS452DN-T1-E3

        OMO.#: OMO-SIS452DN-T1-E3-1190

        		 Neu und Original
        SIS452DN-T1-GE3

        Mfr.#: SIS452DN-T1-GE3

        OMO.#: OMO-SIS452DN-T1-GE3-VISHAY

        		 MOSFET N-CH 12V 35A 1212-8 PPAK
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        3000
        Menge eingeben:
        Der aktuelle Preis von SIS452DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        1,52 $
        1,52 $
        10
        1,44 $
        14,39 $
        100
        1,36 $
        136,35 $
        500
        1,29 $
        643,90 $
        1000
        1,21 $
        1 212,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
        Beginnen mit
        Top