FD400R33KF2C-K

FD400R33KF2C-K
Mfr. #:
FD400R33KF2C-K
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Modules N-CH 3.3KV 660A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FD400R33KF2C-K Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
IGBTs - Module
Produkt
IGBT Silizium Module
Montageart
SMD/SMT
Paket-Koffer
IHV130
Aufbau
Single Dual Collector Dual Emitter
Maximale-Betriebstemperatur
+ 125 C
Mindest-Betriebstemperatur
- 40 C
Kollektor-Emitter-Spannung-VCEO-Max
3300 V
Kontinuierlicher Kollektorstrom-bei-25-C
660 A
Maximale Gate-Emitter-Spannung
+/- 20 V
Tags
FD400R33KF2C, FD400R33KF2, FD400R33KF, FD400R33K, FD400R3, FD400R, FD400, FD40, FD4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
FD400R33KF2CKNOSA1
DISTI # FD400R33KF2CKNOSA1-ND
Infineon Technologies AGIGBT MODULE VCES 650V 400A
RoHS: Not compliant
Min Qty: 2
Container: Bulk
Temporarily Out of Stock
  • 2:$1,129.5550
FD400R33KF2C-K
DISTI # SP000100626
Infineon Technologies AGTrans IGBT Module N-CH 3.3KV 660A 7-pin IHV130-3 (Alt: SP000100626)
RoHS: Not Compliant
Min Qty: 1
Europe - 0
  • 1:€953.7900
FD400R33KF2CKNOSA1
DISTI # FD400R33KF2CKNOSA1
Infineon Technologies AGTRACTION - Trays (Alt: FD400R33KF2CKNOSA1)
RoHS: Not Compliant
Min Qty: 2
Container: Tray
Americas - 0
  • 2:$1,236.0000
  • 4:$1,192.0000
  • 8:$1,149.0000
  • 12:$1,110.0000
  • 20:$1,090.0000
FD400R33KF2CKNOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 660A I(C), 3300V V(BR)CES, N-Channel
RoHS: Not Compliant
34
  • 1000:$941.2900
  • 500:$990.8300
  • 100:$1,031.5500
  • 25:$1,075.7600
  • 1:$1,158.5100
FD400R33KF2C-K
DISTI # 641-FD400R33KF2C-K
Infineon Technologies AGIGBT Modules N-CH 3.3KV 660A4
  • 1:$1,073.0700
  • 5:$1,055.9200
Bild Teil # Beschreibung
FD400R33KF2C-K

Mfr.#: FD400R33KF2C-K

OMO.#: OMO-FD400R33KF2C-K

IGBT Modules N-CH 3.3KV 660A
FD400R33KF2C

Mfr.#: FD400R33KF2C

OMO.#: OMO-FD400R33KF2C

IGBT Modules 3300V 400A CHOPPER
FD400R33KF2C-K

Mfr.#: FD400R33KF2C-K

OMO.#: OMO-FD400R33KF2C-K-125

IGBT Modules N-CH 3.3KV 660A
FD400R33KF2C

Mfr.#: FD400R33KF2C

OMO.#: OMO-FD400R33KF2C-125

IGBT Modules 3300V 400A CHOPPER
FD400R33K2-K

Mfr.#: FD400R33K2-K

OMO.#: OMO-FD400R33K2-K-1190

Neu und Original
FD400R33K2C-K

Mfr.#: FD400R33K2C-K

OMO.#: OMO-FD400R33K2C-K-1190

Neu und Original
FD400R33KF1

Mfr.#: FD400R33KF1

OMO.#: OMO-FD400R33KF1-1190

Neu und Original
FD400R33KF2

Mfr.#: FD400R33KF2

OMO.#: OMO-FD400R33KF2-1190

Neu und Original
FD400R33KF2CKNOSA1

Mfr.#: FD400R33KF2CKNOSA1

OMO.#: OMO-FD400R33KF2CKNOSA1-INFINEON-TECHNOLOGIES

IGBT MODULE VCES 650V 400A
FD400R33KF2CNOSA1

Mfr.#: FD400R33KF2CNOSA1

OMO.#: OMO-FD400R33KF2CNOSA1-INFINEON-TECHNOLOGIES

IGBT MODULE VCES 650V 400A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von FD400R33KF2C-K dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,00 $
1,00 $
10
1,00 $
10,00 $
100
1,00 $
100,00 $
500
1,00 $
500,00 $
1000
1,00 $
1 000,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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