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IPA100N08N3 G

IPA100N08N3 G
Mfr. #:
IPA100N08N3 G
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 80V 40A TO220FP-3 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPA100N08N3 G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPA100N08N3 G Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220FP-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
40 A
Rds On - Drain-Source-Widerstand:
10 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
9 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
35 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Rohr
Höhe:
16.15 mm
Länge:
10.65 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
4.85 mm
Marke:
Infineon-Technologien
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
30 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
23 ns
Typische Einschaltverzögerungszeit:
13 ns
Teil # Aliase:
IPA100N08N3GXKSA1 IPA1N8N3GXK SP000473900
Gewichtseinheit:
0.211644 oz
Tags
IPA100N08N3G, IPA100, IPA10, IPA1, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPA100N08N3GXKSA1
DISTI # IPA100N08N3GXKSA1-ND		Infineon Technologies AGMOSFET N-CH 80V 40A TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
  • 500:$1.1119
IPA100N08N3GXKSA1
DISTI # IPA100N08N3GXKSA1		Infineon Technologies AGTrans MOSFET N-CH 80V 40A 3-Pin(3+Tab) TO-220FP Tube - Rail/Tube (Alt: IPA100N08N3GXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$0.8319
  • 1000:$0.8019
  • 2000:$0.7729
  • 3000:$0.7469
  • 5000:$0.7329
IPA100N08N3GXKSA1
DISTI # SP000473900		Infineon Technologies AGTrans MOSFET N-CH 80V 40A 3-Pin(3+Tab) TO-220FP Tube (Alt: SP000473900)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.2399
  • 10:€0.9669
  • 25:€0.8639
  • 50:€0.7859
  • 100:€0.7629
  • 500:€0.7479
  • 1000:€0.7369
IPA100N08N3GXKSA1Infineon Technologies AGPower Field-Effect Transistor, 40A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		10500
  • 1000:$0.7800
  • 500:$0.8200
  • 100:$0.8500
  • 25:$0.8900
  • 1:$0.9600
IPA100N08N3 G
DISTI # 726-IPA100N08N3G		Infineon Technologies AGMOSFET N-Ch 80V 40A TO220FP-3 OptiMOS 3
RoHS: Compliant		376
  • 1:$1.5600
  • 10:$1.3300
  • 100:$1.0600
IPA100N08N3GXKSA1
DISTI # N/A		Infineon Technologies AGMOSFET MV POWER MOS0
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    		 Res Thick Film 0402 150 Ohm 5% 0.063W(1/16W) ±100ppm/C Molded SMD Paper T/R
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    Verfügbarkeit
    Aktie:
    205
    Auf Bestellung:
    2188
    Menge eingeben:
    Der aktuelle Preis von IPA100N08N3 G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,70 $
    1,70 $
    10
    1,44 $
    14,40 $
    100
    1,15 $
    115,00 $
    500
    1,01 $
    505,00 $
    1000
    0,84 $
    838,00 $
    2500
    0,78 $
    1 950,00 $
    5000
    0,75 $
    3 755,00 $
    10000
    0,72 $
    7 220,00 $
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