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IRL8113PBF

IRL8113PBF
Mfr. #:
IRL8113PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT 30V 105A 23nC 6mOhm Qg log lvl
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRL8113PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRL8113PBF DatasheetIRL8113PBF Datasheet (P4-P6)IRL8113PBF Datasheet (P7-P9)IRL8113PBF Datasheet (P10-P12)IRL8113PBF Datasheet (P13)
ECAD Model:
Mehr Informationen:
IRL8113PBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
105 A
Rds On - Drain-Source-Widerstand:
7.1 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
23 nC
Pd - Verlustleistung:
110 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001576430
Gewichtseinheit:
0.211644 oz
Tags
IRL8113P, IRL8113, IRL811, IRL81, IRL8, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, N Ch., 30V, 105A, 6 MOHM, 23 NCQG, TO-220AB, Pb-Free
***ure Electronics
Single N-Channel 30 V 6 mOhm 23 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop Global
Trans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***ark
N Channel Mosfet, 30V, 105A, To-220Ab; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:105A; On Resistance Rds(On):0.006Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, 105A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:105A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:105A; Junction to Case Thermal Resistance A:1.32°C/W; On State resistance @ Vgs = 10V:6ohm; Package / Case:TO-220AB; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:420A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRL8113PBF
DISTI # V99:2348_13889797		Infineon Technologies AGTrans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB Tube740
  • 1000:$0.6723
  • 500:$0.7925
  • 100:$0.8991
  • 10:$1.0915
  • 1:$1.2286
IRL8113PBF
DISTI # IRL8113PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 105A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		514In Stock
  • 1000:$0.8003
  • 500:$1.0137
  • 100:$1.3071
  • 10:$1.6540
  • 1:$1.8700
IRL8113PBF
DISTI # 30282774		Infineon Technologies AGTrans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB Tube5050
  • 1000:$0.4656
  • 500:$0.4992
  • 250:$0.5136
  • 100:$0.5376
  • 30:$0.5712
IRL8113PBF
DISTI # 26198072		Infineon Technologies AGTrans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB Tube740
  • 500:$0.7925
  • 100:$0.8991
  • 12:$1.0915
IRL8113PBF
DISTI # IRL8113PBF		Infineon Technologies AGTrans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRL8113PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 0
  • 1:$0.5619
  • 10:$0.5539
  • 25:$0.5459
  • 50:$0.5379
  • 100:$0.5189
  • 500:$0.5009
  • 1000:$0.4929
IRL8113PBF
DISTI # SP001576430		Infineon Technologies AGTrans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB (Alt: SP001576430)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.3719
  • 10:€1.1719
  • 25:€1.1689
  • 50:€1.1659
  • 100:€0.8979
  • 500:€0.7879
  • 1000:€0.6229
IRL8113PBF.
DISTI # 29AC7101		Infineon Technologies AGN CHANNEL MOSFET, 30V, 105A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:105A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:20V,MSL:- RoHS Compliant: Yes0
  • 1:$1.6000
  • 10:$1.3600
  • 100:$1.0500
  • 500:$0.9220
  • 1000:$0.7280
IRL8113PBF
DISTI # 70017978		Infineon Technologies AGIRL8113PBF N-channel MOSFET Transistor,105 A,30 V,3-Pin TO-220AB
RoHS: Compliant		0
  • 900:$1.8700
IRL8113PBF
DISTI # 942-IRL8113PBF		Infineon Technologies AGMOSFET MOSFT 30V 105A 23nC 6mOhm Qg log lvl
RoHS: Compliant		980
  • 1:$1.6000
  • 10:$1.3600
  • 100:$1.0500
  • 500:$0.9220
  • 1000:$0.7280
IRL8113PBFInfineon Technologies AG 
RoHS: Not Compliant		200
  • 1000:$0.3700
  • 500:$0.3900
  • 100:$0.4000
  • 25:$0.4200
  • 1:$0.4500
IRL8113PBFInternational Rectifier 
RoHS: Not Compliant		861
  • 1000:$0.6500
  • 500:$0.6800
  • 100:$0.7100
  • 25:$0.7400
  • 1:$0.7900
IRL8113PBF
DISTI # 6887207		Infineon Technologies AGMOSFET N-CHANNEL 30V 105A HEXFET TO220AB, PK870
  • 5:£1.2400
  • 25:£0.9900
  • 50:£0.8760
  • 250:£0.7600
  • 500:£0.6660
IRL8113PBF
DISTI # IRL8113PBF		Infineon Technologies AGN-LogL 30V 105A 110W 0,006R TO220AB
RoHS: Compliant		430
  • 10:€0.6130
  • 50:€0.3730
  • 200:€0.3130
  • 500:€0.3015
IRL8113PBF
DISTI # 8659931		Infineon Technologies AGMOSFET, N, 30V, 105A, TO-220
RoHS: Compliant		8
  • 5:£1.1300
  • 25:£0.5420
  • 100:£0.5310
  • 250:£0.5200
  • 500:£0.5090
IRL8113PBF
DISTI # C1S322000512559		Infineon Technologies AGTrans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		740
  • 500:$0.7925
  • 100:$0.8991
  • 10:$1.0915
IRL8113PBF
DISTI # XSLY00000001147		INFINEON/IRTO-220AB
RoHS: Compliant		2088
  • 1250:$0.5700
  • 2088:$0.5300
IRL8113PBF
DISTI # 8659931		Infineon Technologies AGMOSFET, N, 30V, 105A, TO-220
RoHS: Compliant		6
  • 1:$2.5400
  • 10:$2.1600
  • 100:$1.6600
  • 500:$1.4600
  • 1000:$1.1600
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Mfr.#: MCP3208-CI/P

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Mfr.#: FDMS7660AS

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OMO.#: OMO-NJM2904D-NJR-CORPORATION

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Verfügbarkeit
Aktie:
987
Auf Bestellung:
2970
Menge eingeben:
Der aktuelle Preis von IRL8113PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,59 $
1,59 $
10
1,35 $
13,50 $
100
1,04 $
104,00 $
500
0,92 $
461,00 $
1000
0,73 $
728,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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