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AOT12N50

AOT12N50
Mfr. #:
AOT12N50
Hersteller:
Alpha & Omega Semiconductor Inc
Beschreibung:
MOSFET N-CH 500V 12A TO220
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AOT12N50 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AOT12N50 DatasheetAOT12N50 Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Tags
AOT12N, AOT12, AOT1, AOT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Tube
***ha & Omega Semiconductor SCT
500V N-Channel MOSFET, TO-220-3, RoHS
***el Electronic
IC REG LINEAR 3.2V 50MA SOT23-5
***emi
N-Channel Power MOSFET, QFET®, 500 V, 12.5 A, 430 mΩ, TO-220
***et Europe
Trans MOSFET N-CH 500V 12.5A 3-Pin(3+Tab) TO-220AB Rail
***enic
500V 12.5A 430m´Î@10V6.25A 170W 5V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***ure Electronics
N-Channel 500 V 0.43 O Flange Muont Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 12.5A I(D), 500V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):430mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:170W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:12.5A; On State Resistance Max:430mohm; Package / Case:TO-220; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:50A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***th Star Micro
Transistor MOSFET N-CH 500V 14A 3-Pin (3+Tab) TO-220 Tube
***icroelectronics
N-Channel 500V - 0.34 Ohm - 14A Zener-Protected SuperMesh(TM) POWER MOSFET
***ure Electronics
N-Channel 500 V 0.38 Ohm 150 W Flange Mount SuperMESH™ Mosfet - TO-220-3
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 14A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 500V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):340mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:14A; Package / Case:TO-220; Power Dissipation Pd:150W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
*** Source Electronics
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 500V 10A TO-220FP
***icroelectronics
N-channel 500 V, 0.48 Ohm typ., 10 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220 package
***ure Electronics
Single N-Channel 500 V 125 W 68 nC Silicon Through Hole Mosfet - TO-220-3
*** Electronics
STP11NK50Z STMicroelectronics MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH N-Channel Mosfet STP11NK50Z TO-220(ST)
***ark
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:125W RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 10A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, UniFETTM II, 500 V, 11.5 A, 520 mΩ, TO-220
***ark
UNIFET2 500V N-CHANNEL MOSFET, TO220 - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
***Yang
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube
***ure Electronics
N-Channel 500 V 520 mO 30 nC Flange Mount PowerTrench® Mosfet - TO-220
***roFlash
Power Field-Effect Transistor, 11.5A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ical
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220AB Tube
***ponent Stockers USA
9 A 500 V 0.399 ohm N-CHANNEL Si POWER MOSFET TO-220AB
*** Stop Electro
Power Field-Effect Transistor, 9A I(D), 500V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***ark
MOSFET, N, TO-220; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:560V; Current, Id Cont:9A; On State Resistance:0.399ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:560V; On Resistance Rds(on):399mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:9A; Package / Case:TO-220; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 500 V, 0.4 Ohm, 8.5 A MDmesh(TM) II Power MOSFET in TO-220
***et
Trans MOSFET N-CH 500V 8.5A 3-Pin(3+Tab) TO-220 Tube
***r Electronics
Power Field-Effect Transistor, 9A I(D), 500V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 500V, 9A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 70W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
Teil # Mfg. Beschreibung Aktie Preis
AOT12N50
DISTI # 30705201		Alpha & Omega SemiconductorTrans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		950
  • 22:$0.4603
AOT12N50
DISTI # 785-1240-5-ND		Alpha & Omega SemiconductorMOSFET N-CH 500V 12A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		12In Stock
  • 10:$1.4140
  • 1:$1.6000
AOT12N50
DISTI # AOT12N50		Alpha & Omega SemiconductorTransistor: N-MOSFET,unipolar,500V,8.4A,250W,TO220526
  • 500:$0.5100
  • 100:$0.5400
  • 25:$0.6000
  • 5:$0.6800
  • 1:$0.7500
Bild Teil # Beschreibung
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Mfr.#: AOT1016C

OMO.#: OMO-AOT1016C-1190

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AOT10N60

Mfr.#: AOT10N60

OMO.#: OMO-AOT10N60-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 600V 10A TO-220
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Mfr.#: AOT10T60L

OMO.#: OMO-AOT10T60L-ALPHA-AND-OMEGA-SEMICONDUCTOR

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AOT1206-3D-RGB03

Mfr.#: AOT1206-3D-RGB03

OMO.#: OMO-AOT1206-3D-RGB03-1190

 Neu und Original
AOT128

Mfr.#: AOT128

OMO.#: OMO-AOT128-1190

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AOT12N30L

Mfr.#: AOT12N30L

OMO.#: OMO-AOT12N30L-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N CH 300V 11.5A TO220
AOT12N40

Mfr.#: AOT12N40

OMO.#: OMO-AOT12N40-1190

 Neu und Original
AOT160

Mfr.#: AOT160

OMO.#: OMO-AOT160-1190

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AOT1608

Mfr.#: AOT1608

OMO.#: OMO-AOT1608-1190

 Neu und Original
AOT12N65_001

Mfr.#: AOT12N65_001

OMO.#: OMO-AOT12N65-001-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 30V TO220
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von AOT12N50 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,78 $
0,78 $
10
0,74 $
7,41 $
100
0,70 $
70,20 $
500
0,66 $
331,50 $
1000
0,62 $
624,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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