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IRF8721PBF

IRF8721PBF
Mfr. #:
IRF8721PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 30V 1 N-CH HEXFET 8.5mOhms 8.3nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF8721PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8721PBF DatasheetIRF8721PBF Datasheet (P4-P6)IRF8721PBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
14 A
Rds On - Drain-Source-Widerstand:
12.5 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
8.3 nC
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel
Breite:
3.9 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
3800
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001563844
Gewichtseinheit:
0.019048 oz
Tags
IRF8721P, IRF8721, IRF872, IRF87, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 95, IRF8721PBF N-Channel MOSFET, 14 A, 30 V HEXFET, 8-Pin SOIC Infineon
***ied Electronics & Automation
IRF8721PBF N-channel MOSFET Transistor,14 A, 30 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 8.5 mOhm 8.3 nC HEXFET® Power Mosfet - SOIC-8
***p One Stop Global
Trans MOSFET N-CH Si 30V 14A 8-Pin SOIC Tube
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: N Power dissipation: 2.5 W
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***ical
Trans MOSFET N-CH 30V 14A 8-Pin SOIC Tube
***et Europe
Trans MOSFET N-CH 30V 14A 8-Pin SOIC
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
***i-Key
MOSFET N-CH 30V 14A 8-SOIC
***ronik
N-CH 30V 14A 8,5mOhm SO8 RoHSconf
***ukat
N-Ch 30V 14A 2,5W 0,0085R SO8
***ark
Transistor; Transistor Type:MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:14A; On Resistance, Rds(on):8.5mohm; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:30V; Total Gate Charge:8.3nC; No. of Pins:8 ;RoHS Compliant: Yes
***nell
MOSFET, N SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:14A; Resistance, Rds On:0.0085ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.35V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:110A; Power, Pd:2.5W; Typ Charge Qrr @ Tj = 25°C:8.3nC; Voltage, Vds:30V; Voltage, Vds Max:30V
***ment14 APAC
MOSFET, N SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Charge Qrr @ Tj = 25°C Typ:8.3nC; Current Id Max:14A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:110A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2.35V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IRF8721PBF
DISTI # V36:1790_13890348		Infineon Technologies AGTrans MOSFET N-CH Si 30V 14A 8-Pin SOIC Tube2198
  • 25000:$0.2347
  • 10000:$0.2434
  • 2500:$0.2533
  • 1000:$0.2958
  • 100:$0.3565
  • 10:$0.4969
  • 1:$0.5733
IRF8721PBF
DISTI # IRF8721PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 14A 8-SOIC
RoHS: Compliant
Min Qty: 3800
Container: Tube		Limited Supply - Call
    IRF8721PBF
    DISTI # 27116093    		Infineon Technologies AGTrans MOSFET N-CH Si 30V 14A 8-Pin SOIC Tube2303
    • 25000:$0.2651
    • 10000:$0.2762
    • 2500:$0.2862
    • 1000:$0.3387
    • 100:$0.4234
    • 49:$0.6562
    IRF8721PBF
    DISTI # 26194401    		Infineon Technologies AGTrans MOSFET N-CH Si 30V 14A 8-Pin SOIC Tube2198
    • 1000:$0.2958
    • 100:$0.3565
    • 29:$0.4969
    IRF8721PBF
    DISTI # SP001563844    		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 8-Pin SOIC (Alt: SP001563844)
    RoHS: Compliant
    Min Qty: 1    		Europe - 3325
    • 1:€0.3359
    • 10:€0.2979
    • 25:€0.2679
    • 50:€0.2439
    • 100:€0.2239
    • 500:€0.2059
    • 1000:€0.1919
    IRF8721PBF
    DISTI # IRF8721PBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 8-Pin SOIC (Alt: IRF8721PBF)
    RoHS: Compliant
    Min Qty: 95    		Asia - 0
      IRF8721PBF
      DISTI # 70018014      		Infineon Technologies AGMOSFET,N Ch.,30V,14A,8.5 MOHM,8.3 NC QG,SO-8,Pb-Free
      RoHS: Compliant      		0
      • 3800:$0.5700
      IRF8721PBF
      DISTI # 942-IRF8721PBF      		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 8.5mOhms 8.3nC
      RoHS: Compliant      		3023
      • 1:$0.7900
      • 10:$0.6510
      • 100:$0.4200
      • 1000:$0.3360
      • 2500:$0.2840
      • 10000:$0.2740
      • 25000:$0.2630
      IRF8721PBFInfineon Technologies AGPower Field-Effect Transistor, 14A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
      RoHS: Compliant      		50
      • 1000:$0.3100
      • 500:$0.3300
      • 100:$0.3400
      • 25:$0.3500
      • 1:$0.3800
      IRF8721PBFInternational Rectifier 
      RoHS: Not Compliant      		1128
      • 1000:$0.3100
      • 500:$0.3300
      • 100:$0.3400
      • 25:$0.3500
      • 1:$0.3800
      IRF8721PBF
      DISTI # 495685      		Infineon Technologies AGMOSFET N-CHANNEL 30V 14A HEXFET SOIC8, PK1990
      • 10:£0.4480
      • 50:£0.3700
      • 200:£0.2910
      • 500:£0.2620
      • 1000:£0.2340
      IRF8721PBF
      DISTI # IRF8721PBF      		Infineon Technologies AGN-Ch 30V 14A 2,5W 0,0085R SO8
      RoHS: Compliant      		133
      • 19:€0.4105
      • 190:€0.2505
      • 570:€0.2105
      • 1045:€0.2025
      IRF8721TRPBF
      DISTI # IRF8721PBF-GURT      		Infineon Technologies AGN-Ch 30V 14A 2,5W 0,0085R SO8
      RoHS: Compliant      		0
      • 50:€0.2430
      • 100:€0.2030
      • 500:€0.1830
      • 2000:€0.1760
      IRF8721PBFInternational RectifierINSTOCK432
        IRF8721PBF
        DISTI # 1551902        		Infineon Technologies AGMOSFET, N SO-8
        RoHS: Compliant        		2
        • 5:£0.4480
        • 25:£0.2860
        • 100:£0.2780
        • 250:£0.2700
        • 500:£0.2620
        IRF8721PBF
        DISTI # C1S322000585634        		Infineon Technologies AGTrans MOSFET N-CH Si 30V 14A 8-Pin SOIC Tube
        RoHS: Compliant        		2198
        • 1000:$0.2958
        • 100:$0.3565
        • 10:$0.4969
        IRF8721PBF
        DISTI # 1551902        		Infineon Technologies AGMOSFET, N SO-8
        RoHS: Compliant        		2
        • 1:$1.2500
        • 10:$1.0400
        • 100:$0.6650
        • 1000:$0.5320
        • 2500:$0.4500
        • 10000:$0.4340
        • 25000:$0.4160
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        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1985
        Menge eingeben:
        Der aktuelle Preis von IRF8721PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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