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FDI33N25TU

FDI33N25TU
Mfr. #:
FDI33N25TU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET TBD
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDI33N25TU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-262-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
250 V
Id - Kontinuierlicher Drainstrom:
33 A
Rds On - Drain-Source-Widerstand:
77 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
235 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
7.88 mm
Länge:
10.29 mm
Transistortyp:
1 N-Channel
Breite:
4.83 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
26.6 S
Abfallzeit:
120 ns
Produktart:
MOSFET
Anstiegszeit:
230 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
75 ns
Typische Einschaltverzögerungszeit:
35 ns
Gewichtseinheit:
0.084199 oz
Tags
FDI3, FDI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Teil # Mfg. Beschreibung Aktie Preis
FDI33N25TU
DISTI # FDI33N25TU-ND		ON SemiconductorMOSFET N-CH 250V 33A I2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    FDI33N25TU
    DISTI # 512-FDI33N25TU    		ON SemiconductorMOSFET TBD
    RoHS: Compliant    		0
      FDI33N25TUFairchild Semiconductor CorporationPower Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		1261
      • 1000:$1.0800
      • 500:$1.1400
      • 100:$1.1800
      • 25:$1.2300
      • 1:$1.3300
      Bild Teil # Beschreibung
      FDI33N25TU

      Mfr.#: FDI33N25TU

      OMO.#: OMO-FDI33N25TU

      		 MOSFET TBD
      FDI33N25

      Mfr.#: FDI33N25

      OMO.#: OMO-FDI33N25-1190

      		 Neu und Original
      FDI33N25TU

      Mfr.#: FDI33N25TU

      OMO.#: OMO-FDI33N25TU-ON-SEMICONDUCTOR

      		 MOSFET N-CH 250V 33A I2PAK
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von FDI33N25TU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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