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SIDR610DP-T1-GE3

SIDR610DP-T1-GE3
Mfr. #:
SIDR610DP-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 200V Vds -/+20V Vgs PowerPAK SO-8DC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIDR610DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR610DP-T1-GE3 DatasheetSIDR610DP-T1-GE3 Datasheet (P4-P6)SIDR610DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SIDR610DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8DC-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
39.6 A
Rds On - Drain-Source-Widerstand:
31.9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
38 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SID
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
27 S
Abfallzeit:
24 ns
Produktart:
MOSFET
Anstiegszeit:
20 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns
Typische Einschaltverzögerungszeit:
9 ns
Tags
SIDR6, SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Teil # Mfg. Beschreibung Aktie Preis
SIDR610DP-T1-GE3
DISTI # V99:2348_22587802		Vishay IntertechnologiesN-Channel 200 V (D-S) MOSFET0
    SIDR610DP-T1-GE3
    DISTI # SIDR610DP-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CHAN 200V PPAK SO-8DC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		55In Stock
    • 1000:$1.8601
    • 500:$2.2055
    • 100:$2.5908
    • 10:$3.1620
    • 1:$3.5200
    SIDR610DP-T1-GE3
    DISTI # SIDR610DP-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CHAN 200V PPAK SO-8DC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		55In Stock
    • 1000:$1.8601
    • 500:$2.2055
    • 100:$2.5908
    • 10:$3.1620
    • 1:$3.5200
    SIDR610DP-T1-GE3
    DISTI # SIDR610DP-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CHAN 200V PPAK SO-8DC
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		On Order
    • 3000:$1.7199
    SIDR610DP-T1-GE3
    DISTI # SIDR610DP-T1-GE3    		Vishay IntertechnologiesN-CHANNEL 200-V (D-S) MOSFET - Tape and Reel (Alt: SIDR610DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$1.4900
    • 18000:$1.5900
    • 30000:$1.5900
    • 6000:$1.6900
    • 12000:$1.6900
    SIDR610DP-T1-GE3
    DISTI # 99AC0534    		Vishay IntertechnologiesMOSFET, N-CH, 200V, 39.6A, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:39.6A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0239ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
    • 500:$2.0600
    • 250:$2.3000
    • 100:$2.3700
    • 50:$2.5500
    • 25:$2.7200
    • 10:$2.8900
    • 1:$3.4800
    SIDR610DP-T1-GE3
    DISTI # 81AC3429    		Vishay IntertechnologiesN-CHANNEL 200-V (D-S) MOSFET0
    • 20000:$1.5200
    • 12000:$1.5400
    • 8000:$1.6000
    • 4000:$1.7200
    • 2000:$1.8500
    • 1:$1.9300
    SIDR610DP-T1-GE3
    DISTI # 78-SIDR610DP-T1-GE3    		Vishay IntertechnologiesMOSFET 200V Vds -/+20V Vgs PowerPAK SO-8DC
    RoHS: Compliant    		5934
    • 1:$3.4500
    • 10:$2.8600
    • 100:$2.3500
    • 250:$2.2800
    • 500:$2.0400
    • 1000:$1.7200
    • 3000:$1.6400
    SIDR610DP-T1-GE3
    DISTI # 3014141    		Vishay IntertechnologiesMOSFET, N-CH, 200V, 39.6A, 125W0
    • 500:£1.4900
    • 250:£1.6700
    • 100:£1.7200
    • 10:£2.0900
    • 1:£2.8400
    SIDR610DP-T1-GE3
    DISTI # 3014141    		Vishay IntertechnologiesMOSFET, N-CH, 200V, 39.6A, 125W
    RoHS: Compliant    		0
    • 1000:$2.2800
    • 500:$2.5000
    • 250:$2.7600
    • 100:$2.9800
    • 10:$3.7400
    • 1:$4.8200
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von SIDR610DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,45 $
    3,45 $
    10
    2,86 $
    28,60 $
    100
    2,35 $
    235,00 $
    250
    2,28 $
    570,00 $
    500
    2,04 $
    1 020,00 $
    1000
    1,72 $
    1 720,00 $
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