MMRF2007GNR1

Mfr. #:: MMRF2007GNR1
Hersteller:: NXP / Freescale
Beschreibung:: RF MOSFET Transistors RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: MMRF2007GNR1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: NXP

Produktkategorie:: HF-MOSFET-Transistoren

Polarität des Transistors:: Dualer N-Kanal

Technologie:: Si

Id - Kontinuierlicher Drainstrom:: 40 uA, 320 uA

Vds - Drain-Source-Durchbruchspannung:: - 500 mV, 70 V

Gewinnen:: 32.6 dB

Ausgangsleistung:: 35 W

Minimale Betriebstemperatur:: - 40 C

Maximale Betriebstemperatur:: + 150 C

Montageart:: SMD/SMT

Paket / Koffer:: TO-270-WBLG-16

Verpackung:: Spule

Arbeitsfrequenz:: 136 MHz to 940 MHz

Serie:: MMRF2007

Typ:: HF-Leistungs-MOSFET

Marke:: NXP / Freescale

Anzahl der Kanäle:: 2 Channel

Produktart:: HF-MOSFET-Transistoren

Werkspackungsmenge:: 500

Unterkategorie:: MOSFETs

Vgs - Gate-Source-Spannung:: - 0.5 V, 10 V

Vgs th - Gate-Source-Schwellenspannung:: 2 V, 2 V

Teil # Aliase:: 935312376528

Gewichtseinheit:: 0.085451 oz

Tags: MMRF200, MMRF2, MMRF, MMR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MMRF2007GNR1 Beschreibung

***escale Semiconductor: RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V

***W: Amplifier,136 to 940 MHz, 79 W, Typ Gain in dB is 32.6 @ 940 MHz, 28 V, LDMOS,

***i-Key: RF LDMOS WIDEBAND INTEGRATED POW

***et: Power Amp 940MHz Dual 16-Pin TO-270WBLG T/R

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
MMRF2007GNR1 DISTI # V36:1790_17079110	NXP Semiconductors	RF & MW POWER AMPLIFIER	0	500000:$61.9000 250000:$61.9100 50000:$63.5100 5000:$67.2400 500:$67.9200
MMRF2007GNR1 DISTI # MMRF2007GNR1-ND	NXP Semiconductors	RF LDMOS WIDEBAND INTEGRATED POW RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	Temporarily Out of Stock	500:$67.9247
MMRF2007GNR1 DISTI # MMRF2007GNR1	Avnet, Inc.	Power Amp 940MHz Dual 16-Pin TO-270WBLG T/R - Tape and Reel (Alt: MMRF2007GNR1) RoHS: Compliant Min Qty: 500 Container: Reel	Americas - 0	5000:$64.8900 3000:$66.1900 2000:$68.6900 1000:$71.4900 500:$74.3900
MMRF2007GNR1 DISTI # 841-MMRF2007GNR1	NXP Semiconductors	RF MOSFET Transistors MMRF2007GN/FM16///REEL 13 Q2 DP	0
MMRF2007GNR1 DISTI # MMRF2007GNR1	NXP Semiconductors	RF & MW POWER AMPLIFIER RoHS: Compliant	0	500:$76.6000

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: MMRF2004NBR1 OMO.#: OMO-MMRF2004NBR1	RF Amplifier 2500-2700 MHz 4 W Avg. 28 V
	Mfr.#: MMRF2010NR1 OMO.#: OMO-MMRF2010NR1	RF MOSFET Transistors Airfast RF LDMOS Integrated Power Amplifier, 1030-1090 MHz, 250 W Peak, 50 V
	Mfr.#: MMRF2010GNR1 OMO.#: OMO-MMRF2010GNR1	RF MOSFET Transistors Airfast RF LDMOS Integrated Power Amplifier, 1030-1090 MHz, 250 W Peak, 50 V
	Mfr.#: MMRF2005NR1 OMO.#: OMO-MMRF2005NR1	RF Amplifier Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V
	Mfr.#: MMRF2007GNR1 OMO.#: OMO-MMRF2007GNR1	RF MOSFET Transistors RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V
	Mfr.#: MMRF2011NT1 OMO.#: OMO-MMRF2011NT1-NXP-SEMICONDUCTORS	SINGLE W-CDMA RF LDMOS WIDEBAND
	Mfr.#: MMRF2007GNR1 OMO.#: OMO-MMRF2007GNR1-NXP-SEMICONDUCTORS	RF LDMOS WIDEBAND INTEGRATED POW
	Mfr.#: MMRF2006NT1 OMO.#: OMO-MMRF2006NT1-NXP-SEMICONDUCTORS	RF Amplifier 1805-2170 MHz 2.4W Avg. 28 V
	Mfr.#: MMRF2004NBR1 OMO.#: OMO-MMRF2004NBR1-NXP-SEMICONDUCTORS	RF Amplifier 2500-2700 MHz 4 W Avg. 28 V
	Mfr.#: MMRF2007NR1 OMO.#: OMO-MMRF2007NR1-NXP-SEMICONDUCTORS	RF MOSFET Transistors RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4500
Menge eingeben:

Der aktuelle Preis von MMRF2007GNR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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MMRF2007GNR1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes