IRGP4266DPBF

IRGP4266DPBF
Mfr. #:
IRGP4266DPBF
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRGP4266DPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247AC-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.7 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
140 A
Pd - Verlustleistung:
455 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
140 A
Marke:
Infineon-Technologien
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
400
Unterkategorie:
IGBTs
Teil # Aliase:
SP001542370
Gewichtseinheit:
0.191185 oz
Tags
IRGP4266D, IRGP4266, IRGP42, IRGP4, IRGP, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 140A 455000mW 3-Pin(3+Tab) TO-247AC Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 140A I(C), 650V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT
***ineon
Target Applications: AC-DC; Pump; Solar; UPS; Welding
***ark
TRANSISTOR, BIPOL, N CH, 650V, TO-247AC
***ical
Trans IGBT Chip N-CH 650V 140A 455000mW 3-Pin(3+Tab) TO-247AD Tube
***ineon
Benefits: Low VCE(ON) and Switching Losses; 5.5s Short Circuit SOA; Square RBSOA; Maximum Junction Temperature 175C; Positive VCE(ON) Temperature Coefficient; Lead-Free, RoHs compliant
***nell
IGBT, SINGLE, 650V, 140A, TO-247AD-3; DC Collector Current: 140A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 455W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AD; No.
***ark
Igbt Single Transistor, 60 A, 2.2 V, 455 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 116A 455000mW 3-Pin(3+Tab) TO-247AD
*** Stop Electro
Insulated Gate Bipolar Transistor, 145A I(C), 650V V(BR)CES, N-Channel, TO-247AD
***ure Electronics
IGBT Transistors 650V/106A TRENCH IGBT GENX4 XPT
***ment14 APAC
IGBT, SINGLE, 650V, 60A, TO-247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***nell
IGBT, SINGLE, 650V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 455W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins:
***ical
Trans IGBT Chip N-CH 650V 140A 455000mW 3-Pin(3+Tab) TO-247AC Tube
***i-Key Marketplace
IRGP4790 - DISCRETE IGBT WITHOUT
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***nell
IGBT, SINGLE, 650V, 140A, TO-247AC-3; DC Collector Current: 140A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 455W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No.
***-Wing Technology
Tube Through Hole ROHS3Compliant IGBT Transistor 2.1V @ 15V 75A 140A 450W 80ns/200ns
***ical
Trans IGBT Chip N-CH 650V 140A 3-Pin(3+Tab) TO-247AD Tube
***nell
IGBT, SINGLE, 650V, 140A, TO-247AC; DC Collector Current: 140A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 450W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No. of
***ark
Transistor, Igbt, 650V, 160A, To-247Ad Rohs Compliant: Yes |Ixys Semiconductor IXXH80N65B4H1
***ical
Trans IGBT Chip N-CH 650V 160A 625000mW 3-Pin(3+Tab) TO-247AD
***el Electronic
IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
***ment14 APAC
Transistor, IGBT, 650V, 160A, TO-247AD;
***ure Electronics
650V, 80A, TO-247. IGBT W/ DIODE
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
Trans IGBT Chip N-CH 650V 145A 536000mW Automotive 3-Pin(3+Tab) TO-247AD
***el Electronic
IGBT Transistors 650V/116A TRENCH IGBT GENX4 XPT
***i-Key
IGBT 650V 116A 455W TO247AD
***S
new, original packaged
Teil # Mfg. Beschreibung Aktie Preis
IRGP4266DPBF
DISTI # V99:2348_13892686
Infineon Technologies AGTrans IGBT Chip N-CH 650V 140A 455000mW 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant
45
  • 500:$8.0930
  • 100:$9.1390
  • 10:$10.8100
  • 1:$11.7480
IRGP4266DPBF
DISTI # IRGP4266DPBF-ND
Infineon Technologies AGIGBT 650V 140A 455W TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube
477In Stock
  • 500:$8.5612
  • 100:$9.6239
  • 25:$10.9228
  • 10:$11.3950
  • 1:$12.4000
IRGP4266DPBF
DISTI # 27093755
Infineon Technologies AGTrans IGBT Chip N-CH 650V 140A 455000mW 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant
380
  • 1000:$7.3953
  • 500:$8.0685
  • 250:$8.6229
  • 100:$9.0684
  • 25:$10.2960
  • 10:$10.7415
  • 2:$11.6820
IRGP4266DPBF
DISTI # 27090073
Infineon Technologies AGTrans IGBT Chip N-CH 650V 140A 455000mW 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant
45
  • 500:$8.7000
  • 100:$9.8244
  • 10:$11.6207
  • 1:$12.6291
IRGP4266DPBF
DISTI # IRGP4266DPBF
Infineon Technologies AGTrans IGBT Chip N-CH 650V 140A 3-Pin TO-247AC Tube - Rail/Tube (Alt: IRGP4266DPBF)
RoHS: Compliant
Min Qty: 400
Container: Tube
Americas - 0
  • 4000:$7.0900
  • 2400:$7.1900
  • 1600:$7.4900
  • 800:$7.7900
  • 400:$8.0900
IRGP4266DPBF
DISTI # SP001542370
Infineon Technologies AGTrans IGBT Chip N-CH 650V 140A 3-Pin TO-247AC Tube (Alt: SP001542370)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€5.3820
  • 500:€6.2215
  • 250:€6.8540
  • 100:€7.5785
  • 25:€8.3720
  • 1:€9.9015
IRGP4266DPBF
DISTI # 55X2838
Infineon Technologies AGIGBT Single Transistor, 140 A, 1.7 V, 455 W, 650 V, TO-247AC, 3 RoHS Compliant: Yes0
    IRGP4266DPBF
    DISTI # 942-IRGP4266DPBF
    Infineon Technologies AGIGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT
    RoHS: Compliant
    392
    • 1:$11.8000
    • 10:$10.8500
    • 25:$10.4000
    • 100:$9.1600
    • 250:$8.7100
    • 500:$8.1500
    • 1000:$7.4700
    IRGP4266DPBF
    DISTI # 9074892P
    Infineon Technologies AGIGBT N-CHANNEL 650V 140A TO-247AC, TU52
    • 125:£7.0800
    • 50:£7.3200
    • 25:£7.4700
    • 5:£7.8600
    IRGP4266DPBF
    DISTI # IRGP4266DPBF
    Infineon Technologies AGTransistor: IGBT,650V,140A,455W,TO247-320
    • 1:$12.7500
    • 3:$11.2600
    • 10:$9.4400
    • 50:$8.8300
    IRGP4266DPBFInternational Rectifier 
    RoHS: Compliant
    Europe - 25
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      Verfügbarkeit
      Aktie:
      392
      Auf Bestellung:
      2375
      Menge eingeben:
      Der aktuelle Preis von IRGP4266DPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      11,80 $
      11,80 $
      10
      10,85 $
      108,50 $
      25
      10,40 $
      260,00 $
      100
      9,16 $
      916,00 $
      250
      8,71 $
      2 177,50 $
      500
      8,15 $
      4 075,00 $
      1000
      7,47 $
      7 470,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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