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IRL80HS120

IRL80HS120
Mfr. #:
IRL80HS120
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRL80HS120 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRL80HS120 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PQFN-6
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
12.5 A
Rds On - Drain-Source-Widerstand:
25 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
7 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
11.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
14 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
22 ns
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
9.2 ns
Typische Einschaltverzögerungszeit:
7.6 ns
Teil # Aliase:
SP001592838
Tags
IRL80, IRL8, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 80V 12.5A 6-Pin PQFN T/R
***ark
Mosfet, N-Ch, 80V, 12.5A, 11.5W, Pqfn; Transistor Polarity:n Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.025Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Rohs Compliant: Yes
***ineon
Available in three different voltage classes (60V, 80V and 100V), Infineons new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving. | Summary of Features: Lowest FOM (R DS(on) x Q g/gd); Optimized Q g, C oss, and Q rr for fast switching; Logic level compatibility; Tiny PQFN 2x2mm package | Benefits: Smallest package footprint; Higher power density designs; Higher switching frequency; Reduced parts count wherever 5V supplies are available; Driven directly from microcontrollers (slow switching); System cost reduction | Target Applications: Wireless charging; Telecom; Adapter
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
Teil # Mfg. Beschreibung Aktie Preis
IRL80HS120
DISTI # V72:2272_17076878		Infineon Technologies AGTrans MOSFET N-CH Si 80V 6A 6-Pin PQFN EP T/R1300
  • 1000:$0.3584
  • 500:$0.4402
  • 250:$0.4906
  • 100:$0.4959
  • 25:$0.6155
  • 10:$0.6228
  • 1:$0.7116
IRL80HS120
DISTI # IRL80HS120CT-ND		Infineon Technologies AGMOSFET N-CH 80V 12.5A 6PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1896In Stock
  • 1000:$0.5051
  • 500:$0.6259
  • 100:$0.7920
  • 10:$0.9880
  • 1:$1.1100
IRL80HS120
DISTI # IRL80HS120DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 12.5A 6PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1896In Stock
  • 1000:$0.5051
  • 500:$0.6259
  • 100:$0.7920
  • 10:$0.9880
  • 1:$1.1100
IRL80HS120
DISTI # IRL80HS120TR-ND		Infineon Technologies AGMOSFET N-CH 80V 12.5A 6PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		On Order
  • 4000:$0.4611
IRL80HS120
DISTI # 26983824		Infineon Technologies AGTrans MOSFET N-CH Si 80V 6A 6-Pin PQFN EP T/R1300
  • 1000:$0.3584
  • 500:$0.4402
  • 250:$0.4906
  • 100:$0.4959
  • 25:$0.6155
  • 19:$0.6228
IRL80HS120
DISTI # IRL80HS120		Infineon Technologies AGTrans MOSFET 80V 12.5A 7-Pin PQFN T/R 4k - Tape and Reel (Alt: IRL80HS120)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 8000
  • 4000:$0.3439
  • 8000:$0.3399
  • 16000:$0.3389
  • 24000:$0.3379
  • 40000:$0.3369
IRL80HS120
DISTI # SP001592838		Infineon Technologies AGTrans MOSFET 80V 12.5A 7-Pin PQFN T/R 4k (Alt: SP001592838)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€0.4829
  • 8000:€0.3949
  • 16000:€0.3619
  • 24000:€0.3339
  • 40000:€0.3099
IRL80HS120
DISTI # 726-IRL80HS120		Infineon Technologies AGMOSFET
RoHS: Compliant		4796
  • 1:$0.8800
  • 10:$0.7470
  • 100:$0.5730
  • 500:$0.5070
  • 1000:$0.4000
IRL80HS120NPI
DISTI # TMOS2078		Infineon Technologies AGN-CH 80V 12A 32mOhm LLPQFN2X2
RoHS: Compliant		Stock DE - 100Stock US - 0
  • 1:$45.5400
  • 3:$42.9300
  • 8:$40.3300
  • 25:$36.4300
  • 72:$35.1300
IRL80HS120
DISTI # C1S322000655447		Infineon Technologies AGMOSFETs1300
  • 250:$0.5074
  • 100:$0.5087
  • 25:$0.6258
  • 10:$0.6281
IRL80HS120
DISTI # C1S322000672763		Infineon Technologies AGMOSFETs4000
  • 4000:$0.4280
IRL80HS120
DISTI # C1S322000653704		Infineon Technologies AGMOSFETs20
  • 10:$0.8040
Bild Teil # Beschreibung
IRL100HS121

Mfr.#: IRL100HS121

OMO.#: OMO-IRL100HS121

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von IRL80HS120 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,87 $
0,87 $
10
0,75 $
7,47 $
100
0,57 $
57,30 $
500
0,51 $
253,50 $
1000
0,40 $
400,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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