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SI4931DY-T1-E3

SI4931DY-T1-E3
Mfr. #:
SI4931DY-T1-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -12V Vds 8V Vgs SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4931DY-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI4931DY-T1-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI4
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
SI4931DY-E3
Gewichtseinheit:
0.006596 oz
Tags
SI4931DY-T, SI4931, SI493, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual P-CH 12V 6.7A 8-Pin SOIC T/R
***ure Electronics
Dual P-Channel 12 V 0.018 Ohm Surface Mount TrenchFET Power Mosfet - SOIC-8
***enic
12V 6.7A 18m´Î@4.5V8.9A 1.1W 1V@350Ã×A 2 P-Channel SOIC-8_150mil MOSFETs ROHS
***ark
Transistor; Continuous Drain Current, Id:-8900mA; Drain Source Voltage, Vds:-12V; On Resistance, Rds(on):0.028ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:8V; Power Dissipation, Pd:1.1W ;RoHS Compliant: Yes
***Yang
Transistor MOSFET Array Dual P-CH 12V 9.2A 8-Pin SOIC T/R - Tape and Reel
***ark
Mosfet Transistor, Dual P Channel, 9.2 A, 12 V, 17 Mohm, -4.5 V, -900 Mv
***eco
Transistor MOSFET Positive Channel 12 Volt 9.2A 8-Pin SOIC T/R
***ure Electronics
Dual P-Channel 12 V 17 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Low RDS(on); Dual P-Channel MOSFET
***nell
MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 9.2A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.017ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -9
***ark
Mosfet Transistor, P Channel, 11.5 A, 12 V, 14 Mohm, -4.5 V, -900 Mv Rohs Compliant: Yes
*** Source Electronics
Trans MOSFET P-CH Si 20V 11.5A 8-Pin SOIC T/R / MOSFET P-CH 12V 11.5A 8-SOIC
***ure Electronics
Single P-Channel 12 V 14 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout; P-Channel MOSFET
***ineon SCT
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***nell
MOSFET, P, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: 11.5A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -900mV; Power Dissip
***i-Key
MOSFET 2P-CH 30V/12V 8SOIC
***i-Key Marketplace
P-CHANNEL POWER MOSFET
***ser
MOSFETs Dual PCh PowerTrench
*** Electronics
INFINEON IRF7410PBF MOSFET Transistor, P Channel, 16 A, -12 V, 7 mohm, -4.5 V, -900 mV
***eco
Transistor MOSFET Positive Channel 20 Volt 16A 8-Pin SOIC
***ure Electronics
Single P-Channel 12 V 7 mOhm 91 nC HEXFET® Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout; P-Channel MOSFET
***Yang
Trans MOSFET P-CH 20V 16A 8-Pin SOIC T/R - Tape and Reel
***ineon SCT
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***nell
MOSFET, P, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -900mV; Power Dissipat
***ure Electronics
Single N-Channel 12 V 0.0027 Ohm Surface Mount Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 12V 22.5A 8-Pin SOIC N T/R
***ark
Mosfet, N Channel, 12V, 34A, Soic-8, Full Reel; Channel Type:n Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:34A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:5.7W Rohs Compliant: Yes
***nell
MOSFET, N CH, 12V, 0.0021OHM, 34A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:5.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
***(Formerly Allied Electronics)
SI4866BDY-T1-GE3 N-channel MOSFET Transistor; 21 A; 12 V; 8-Pin SOIC
***ure Electronics
Single N-Channel 12 V 0.0053 Ohms Surface Mount Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 12V 21.5A 8-Pin SOIC N T/R / MOSFET N-CH 12V 21.5A 8-SOIC
***nell
MOSFET, N CH, 12V, 21.5A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:21.5A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.0042ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:4.45W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4931DY-T1-E3
DISTI # V72:2272_09216662		Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
RoHS: Compliant		172
  • 100:$0.7246
  • 25:$0.8343
  • 10:$1.0197
  • 1:$1.1364
SI4931DY-T1-E3
DISTI # V36:1790_09216662		Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
RoHS: Compliant		0
  • 2500:$0.9135
SI4931DY-T1-E3
DISTI # SI4931DY-T1-E3CT-ND		Vishay SiliconixMOSFET 2P-CH 12V 6.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		23857In Stock
  • 1000:$0.4740
  • 500:$0.6004
  • 100:$0.7268
  • 10:$0.9320
  • 1:$1.0400
SI4931DY-T1-E3
DISTI # SI4931DY-T1-E3DKR-ND		Vishay SiliconixMOSFET 2P-CH 12V 6.7A 8-SOICs
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		23857In Stock
  • 1000:$0.4740
  • 500:$0.6004
  • 100:$0.7268
  • 10:$0.9320
  • 1:$1.0400
SI4931DY-T1-E3
DISTI # SI4931DY-T1-E3TR-ND		Vishay SiliconixMOSFET 2P-CH 12V 6.7A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		22500In Stock
  • 25000:$0.3886
  • 12500:$0.3927
  • 5000:$0.4081
  • 2500:$0.4295
SI4931DY-T1-E3
DISTI # 31920003		Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
RoHS: Compliant		172
  • 13:$1.1364
SI4931DY-T1-E3
DISTI # SI4931DY-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4931DY-T1-E3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.4269
  • 15000:$0.4389
  • 10000:$0.4509
  • 5000:$0.4699
  • 2500:$0.4849
SI4931DY-T1-E3
DISTI # SI4931DY-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R (Alt: SI4931DY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.6429
  • 15000:€0.6719
  • 10000:€0.7599
  • 5000:€0.9369
  • 2500:€1.3059
SI4931DY-T1-E3
DISTI # 57J5686		Vishay IntertechnologiesDUAL P CHANNEL MOSFET, -12V, SOIC, FULL REEL,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-8.9A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:12V,No. of Pins:8Pins RoHS Compliant: Yes0
  • 10000:$0.6210
  • 6000:$0.6360
  • 4000:$0.6600
  • 2000:$0.7340
  • 1000:$0.8070
  • 1:$0.8410
SI4931DY-T1-E3
DISTI # 781-SI4931DY-T1-E3		Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs SO-8
RoHS: Compliant		7629
  • 1:$1.4400
  • 10:$1.1800
SI4931DY-T1-E3Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs SO-8Americas -
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1990
    Menge eingeben:
    Der aktuelle Preis von SI4931DY-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,04 $
    1,04 $
    10
    0,93 $
    9,32 $
    100
    0,73 $
    72,60 $
    500
    0,60 $
    300,00 $
    1000
    0,54 $
    535,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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