SIE812DF-T1-GE3

Mfr. #:: SIE812DF-T1-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 40V 163A 125W 2.6mohm @ 10V
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SIE812DF-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIE812DF-T1-GE3 Datasheet SIE812DF-T1-GE3 Datasheet (P4-P6)SIE812DF-T1-GE3 Datasheet (P7-P9)SIE812DF-T1-GE3 Datasheet (P10)
ECAD Model:
Mehr Informationen:: SIE812DF-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: E

Technologie:: Si

Handelsname:: TrenchFET, PolarPAK

Verpackung:: Spule

Serie:: SIE

Marke:: Vishay / Siliconix

Produktart:: MOSFET

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Teil # Aliase:: SIE812DF-GE3

Tags: SIE812, SIE81, SIE8, SIE

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIE812DF-T1-GE3 Beschreibung

***et: Trans MOSFET N-CH 40V 33A 10-Pin PolarPAK T/R

***ment14 APAC: N CHANNEL MOSFET, 40V, 60A POLARPAK

***i-Key: MOSFET N-CH 40V 60A 10POLARPAK

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:60A; On Resistance, Rds(on):0.0034ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:2.3V ;RoHS Compliant: Yes

SIE812DF-T1-GE3 Mehr Informationen

N-Channel PolarPAK® Power MOSFETs: Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SIE812DF-T1-GE3 DISTI # SIE812DF-T1-GE3-ND	Vishay Siliconix	MOSFET N-CH 40V 60A POLARPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$1.8141
SIE812DF-T1-GE3 DISTI # SIE812DF-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 33A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE812DF-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.7900 6000:$1.6900 12000:$1.5900 18000:$1.5900 30000:$1.4900
SIE812DF-T1-GE3 DISTI # 15R4857	Vishay Intertechnologies	N CHANNEL MOSFET, 40V, 60A POLARPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V RoHS Compliant: Yes	0	1:$1.9500 2000:$1.8600 4000:$1.7400 8000:$1.6200 12000:$1.5500 20000:$1.5300
SIE812DF-T1-GE3 DISTI # 26R1858	Vishay Intertechnologies	N CHANNEL MOSFET, 40V, 60A POLARPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V RoHS Compliant: Yes	0	1:$3.8600 25:$3.6300 50:$3.4100 100:$3.1200 250:$2.8200 500:$2.4600 1000:$1.9500
SIE812DF-T1-GE3 DISTI # 781-SIE812DF-GE3	Vishay Intertechnologies	MOSFET 40V 163A 125W 2.6mohm @ 10V RoHS: Compliant	0	3000:$1.6500

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SIE812DF-T1-E3 OMO.#: OMO-SIE812DF-T1-E3	MOSFET 40V 60A 125W 2.6mohm @ 10V
	Mfr.#: SIE812DF-T1-GE3 OMO.#: OMO-SIE812DF-T1-GE3	MOSFET 40V 163A 125W 2.6mohm @ 10V
	Mfr.#: SIE812DF-T1-GE3 OMO.#: OMO-SIE812DF-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 40V 163A 125W 2.6mohm @ 10V
	Mfr.#: SIE812DF-T1-E3 OMO.#: OMO-SIE812DF-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 40V 60A 125W 2.6mohm @ 10V
	Mfr.#: SIE812DF OMO.#: OMO-SIE812DF-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5000
Menge eingeben:

Der aktuelle Preis von SIE812DF-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~3,47 $~~; ~~3,47 $~~

10: ~~2,87 $~~; ~~28,70 $~~

100: ~~2,36 $~~; ~~236,00 $~~

250: ~~2,29 $~~; ~~572,50 $~~

500: ~~2,05 $~~; ~~1 025,00 $~~

1000: ~~1,73 $~~; ~~1 730,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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SIE812DF-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes