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IRF6618TR1

IRF6618TR1
Mfr. #:
IRF6618TR1
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6618TR1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
N
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DirectFET-MT
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
29 A
Rds On - Drain-Source-Widerstand:
2.2 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
43 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.8 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
0.7 mm
Länge:
6.35 mm
Transistortyp:
1 N-Channel
Typ:
HEXFET Leistungs-MOSFET
Breite:
5.05 mm
Marke:
Infineon / IR
Abfallzeit:
8.1 ns
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Anstiegszeit:
71 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
27 ns
Typische Einschaltverzögerungszeit:
21 ns
Tags
IRF6618TR1, IRF6618T, IRF6618, IRF661, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT packag
***ark
MOSFET, N, DIRECTFET, MT; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:170A; Resistance, Rds On:2.2mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.64V; Case Style:MT; ;RoHS Compliant: Yes
***ernational Rectifier
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in
***nell
MOSFET, N, DIRECTFET, MT; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:170A; Resistance, Rds On:2.2mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.64V; Case Style:MT; Termination Type:SMD; Current, Idm Pulse:240A; External Depth:6.35mm; External Length / Height:0.7mm; IC Package (Case style):MT; No. of Pins:7; Power Dissipation:2.8W; Power, Pd:2.8W; Resistance, Rds on Max:2.2mohm; SMD Marking:6618; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-40°C; Time, trr Typ:43ns; Transistors, No. of:1; Typ Capacitance Ciss:5640pF; Typ Charge Qrr @ Tj = 25°C:46nC; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs Max:20V; Voltage, Vgs th Max:2.35V; Voltage, Vgs th Min:1.35V; Width, External:5.05mm
Teil # Mfg. Beschreibung Aktie Preis
IRF6618TR1
DISTI # IRF6618TR1-ND		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
RoHS: Not compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6618TR1PBF
    DISTI # IRF6618TR1PBFTR-ND    		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Limited Supply - Call
      IRF6618TR1PBF
      DISTI # IRF6618TR1PBFCT-ND      		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		Limited Supply - Call
        IRF6618TR1PBF
        DISTI # IRF6618TR1PBFDKR-ND        		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®        		Limited Supply - Call
          IRF6618TR1PBF
          DISTI # 70018828          		Infineon Technologies AG30V N-CHANNEL HEXFET POWER MOSFET WITH 20 VOLT GATE,DIRECTFET MT
          RoHS: Compliant          		0
          • 1000:$2.5000
          • 2000:$2.3000
          IRF6618TR1
          DISTI # 942-IRF6618TR1          		Infineon Technologies AGMOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
          RoHS: Not compliant          		0
            IRF6618TR1PBF
            DISTI # 942-IRF6618TR1PBF            		Infineon Technologies AGMOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
            RoHS: Compliant            		0
              IRF6618TR1International Rectifier30 A, 30 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET66
              • 10:$2.1750
              • 3:$2.9000
              • 1:$4.3500
              IRF6618TR1
              DISTI # 9266585              		Infineon Technologies AG 
              RoHS: Compliant              		0
              • 1:$4.8000
              • 10:$4.5000
              • 100:$4.0700
              • 250:$3.9200
              • 500:$3.7200
              • 1000:$3.7200
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              Verfügbarkeit
              Aktie:
              Available
              Auf Bestellung:
              4500
              Menge eingeben:
              Der aktuelle Preis von IRF6618TR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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