FQD5N60CTM

Mfr. #:: FQD5N60CTM
Hersteller:: ON Semiconductor / Fairchild
Beschreibung:: MOSFET 600V N-Channel Adv Q-FET C-Series
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FQD5N60CTM Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: ON Semiconductor

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-252-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 600 V

Id - Kontinuierlicher Drainstrom:: 2.8 A

Rds On - Drain-Source-Widerstand:: 2.5 Ohms

Vgs - Gate-Source-Spannung:: 30 V

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 2.5 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Höhe:: 2.39 mm

Länge:: 6.73 mm

Serie:: FQD5N60C

Transistortyp:: 1 N-Channel

Breite:: 6.22 mm

Marke:: ON Semiconductor / Fairchild

Abfallzeit:: 46 ns

Produktart:: MOSFET

Anstiegszeit:: 42 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 38 ns

Typische Einschaltverzögerungszeit:: 10 ns

Teil # Aliase:: FQD5N60CTM_NL

Gewichtseinheit:: 0.009184 oz

Tags: FQD5N60CTM, FQD5N60CT, FQD5N60C, FQD5N60, FQD5N6, FQD5N, FQD5, FQD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQD5N60CTM Beschreibung

***emi: N-Channel Power MOSFET, QFET®, 600 V, 2.8 A, 2.5 Ω, DPAK

***ure Electronics: Single N-Channel 600 V 2.5 Ohm 19 nC 2.5 W DMOS SMT Mosfet - TO-252-3

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***emi: N-Channel Power MOSFET, UniFETTM II, 600 V, 3.4 A, 2.5 Ω, DPAK

***ure Electronics: FDD4N60NZ Series 600 V 3.4 A 2.5 Ohm N-Channel UniFETTM 11 Mosfet - DPAK-3

*** Stop Electro: Power Field-Effect Transistor, 3.4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***emi: UniFETTM Ultra FRFETTM MOSFET, N-Channel, 500 V, 3 A, 2 Ω, DPAK

***r Electronics: Power Field-Effect Transistor, 3A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***ure Electronics: Single N-Channel 600 V 4.4 Ohms Surface Mount Power Mosfet - TO-252

*** Stop Electro: Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:2A; On Resistance Rds(On):4.4Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pins Rohs Compliant: No

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 4.4 / Gate-Source Voltage V = 20 / Fall Time ns = 25 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42

***ure Electronics: Single N-Channel 500 V 3 O 19 nC Surface Mount Power Mosfet - TO-252 (DPAK)

***ical: Trans MOSFET N-CH 500V 2.4A 3-Pin(2+Tab) DPAK T/R

***S: French Electronic Distributor since 1988

***ure Electronics: Single N-Channel 500 V 3 Ohms Surface Mount Power Mosfet - TO-252

***SIT Distribution GmbH: Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 500V, 2.4A, D-Pak; Channel Type:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:2.4A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: No

***ment14 APAC: MOSFET, N, 500V, 2.4A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:500V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:2.4A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:8A; SMD Marking:IRFR420; Termination Type:SMD; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***roFlash: Mosfet Transistor, N Channel, 3 A, 500 V, 2.3 Ohm, 10 V, 3.75 V Rohs Compliant: Yes

***icroelectronics: N-CHANNEL 500V - 2.4 Ohm - 3A DPAK Zener-Protected SuperMESH(TM) PowerMOSFET

*** Source Electronics: MOSFET N-CH 500V 3A DPAK / Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) DPAK T/R

***ure Electronics: N-Channel 500 V 2.7 Ohm Surface Mount SuperMESH Power MosFet - TO-252-3

***r Electronics: Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: MOSFET, N-CH, 500V, 3A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Source Voltage Vds:500V; On Resistance

***nell: MOSFET, N-CH, 500V, 3A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 2.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FQD5N60CTM DISTI # V72:2272_06301260	ON Semiconductor	600V, 2.8A, NCH MOSFET	2267	1000:$0.4389 500:$0.5467 250:$0.5646 100:$0.6273 25:$0.7330 10:$0.8959 1:$1.0134
FQD5N60CTM DISTI # V36:1790_06301260	ON Semiconductor	600V, 2.8A, NCH MOSFET	0	2500000:$0.2975 1250000:$0.2979 250000:$0.3392 25000:$0.4182 2500:$0.4317
FQD5N60CTM DISTI # FQD5N60CTMCT-ND	ON Semiconductor	MOSFET N-CH 600V 2.8A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1963In Stock	1000:$0.4764 500:$0.6035 100:$0.7306 10:$0.9370 1:$1.0500
FQD5N60CTM DISTI # FQD5N60CTMDKR-ND	ON Semiconductor	MOSFET N-CH 600V 2.8A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1963In Stock	1000:$0.4764 500:$0.6035 100:$0.7306 10:$0.9370 1:$1.0500
FQD5N60CTM-WS DISTI # FQD5N60CTM-WSTR-ND	ON Semiconductor	MOSFET N-CH 600V 2.8A RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call	2500:$0.4528
FQD5N60CTM-WS DISTI # FQD5N60CTM-WSCT-ND	ON Semiconductor	MOSFET N-CH 600V 2.8A RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FQD5N60CTM-WS DISTI # FQD5N60CTM-WSDKR-ND	ON Semiconductor	MOSFET N-CH 600V 2.8A RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FQD5N60CTM_F080 DISTI # FQD5N60CTM_F080-ND	ON Semiconductor	MOSFET N-CH 600V 2.8A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
FQD5N60CTM DISTI # FQD5N60CTMTR-ND	ON Semiconductor	MOSFET N-CH 600V 2.8A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	25000:$0.3906 12500:$0.3947 5000:$0.4102 2500:$0.4317
FQD5N60CTM DISTI # 33135261	ON Semiconductor	600V, 2.8A, NCH MOSFET	2267	18:$1.0134
FQD5N60CTM DISTI # FQD5N60CTM	ON Semiconductor	Trans MOSFET N-CH 600V 2.8A 3-Pin(2+Tab) DPAK T/R (Alt: FQD5N60CTM) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 2500	25000:€0.2919 15000:€0.3149 10000:€0.3409 5000:€0.3719 2500:€0.4549
FQD5N60CTM DISTI # FQD5N60CTM	ON Semiconductor	Trans MOSFET N-CH 600V 2.8A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD5N60CTM) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 2500	25000:$0.3153 15000:$0.3233 10000:$0.3274 5000:$0.3317 2500:$0.3339
FQD5N60CTM DISTI # FQD5N60CTM	ON Semiconductor	Trans MOSFET N-CH 600V 2.8A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: FQD5N60CTM) RoHS: Compliant Min Qty: 1000 Container: Bulk	Americas - 0	10000:$0.3079 5000:$0.3159 3000:$0.3199 2000:$0.3239 1000:$0.3259
FQD5N60CTM DISTI # 60J0813	ON Semiconductor	Power MOSFET, N Channel, 2.8 A, 600 V, 2 ohm, 10 V, 4 V RoHS Compliant: Yes	0	25000:$0.4360 10000:$0.4500 2500:$0.4670 1:$0.4700
FQD5N60CTM DISTI # 31Y1529	ON Semiconductor	MOSFET, N-CH, 600V, 2.8A, TO-252AA-3,Transistor Polarity:N Channel,Continuous Drain Current Id:2.8A,Drain Source Voltage Vds:600V,On Resistance Rds(on):2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Product Range:-RoHS Compliant: Yes	432	1000:$0.5180 500:$0.6350 250:$0.6730 100:$0.7090 50:$0.7740 25:$0.8420 10:$0.9030 1:$1.0500
FQD5N60CTM. DISTI # 81AC8728	ON Semiconductor	QFC 600V 2.5OHM DPAK ROHS COMPLIANT: YES	0	25000:$0.4360 10000:$0.4500 2500:$0.4670 1:$0.4700
FQD5N60CTM DISTI # 512-FQD5N60CTM	ON Semiconductor	MOSFET 600V N-Channel Adv Q-FET C-Series RoHS: Compliant	4764	1:$0.9600 10:$0.8220 100:$0.6310 500:$0.5580 1000:$0.4400 2500:$0.4200
FQD5N60CTM-WS DISTI # 512-FQD5N60CTM_WS	ON Semiconductor	MOSFET 600V, NCH MOSFET RoHS: Compliant	0
FQD5N60CTM_F080 DISTI # 512-FQD5N60CTM-F080	ON Semiconductor	MOSFET Trans MOS N-Ch 600V 2.8A 3-Pin 2+Tab RoHS: Compliant	0
FQD5N60CTM	Fairchild Semiconductor Corporation	RoHS: Not Compliant	467	1000:$0.3700 500:$0.3900 100:$0.4000 25:$0.4200 1:$0.4500
FQD5N60CTM DISTI # 8089014P	ON Semiconductor	MOSFETFAIRCHILDFQD5N60CTM, RL	640	50:£0.4770
FQD5N60CTM DISTI # 2453898	ON Semiconductor	MOSFET, N-CH, 600V, 2.8A, TO-252AA-3	472	500:£0.4040 250:£0.4300 100:£0.4570 25:£0.5960 5:£0.7020
FQD5N60CTM DISTI # 2453898RL	ON Semiconductor	MOSFET, N-CH, 600V, 2.8A, TO-252AA-3 RoHS: Compliant	0	2500:$0.6460 1000:$0.6770 500:$0.8580 100:$0.9710 10:$1.2700 1:$1.4800
FQD5N60CTM DISTI # 2453898	ON Semiconductor	MOSFET, N-CH, 600V, 2.8A, TO-252AA-3 RoHS: Compliant	432	2500:$0.6460 1000:$0.6770 500:$0.8580 100:$0.9710 10:$1.2700 1:$1.4800

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1987
Menge eingeben:

Der aktuelle Preis von FQD5N60CTM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,96 $~~; ~~0,96 $~~

10: ~~0,82 $~~; ~~8,22 $~~

100: ~~0,63 $~~; ~~63,10 $~~

500: ~~0,56 $~~; ~~279,00 $~~

1000: ~~0,44 $~~; ~~440,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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FQD5N60CTM

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes