GS8256418GD-250I

GS8256418GD-250I
Mfr. #:
GS8256418GD-250I
Hersteller:
GSI Technology
Beschreibung:
SRAM 2.5/3.3V 16M x 18 288M
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
GS8256418GD-250I Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
GS8256418GD-250I Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
GSI-Technologie
Produktkategorie:
SRAM
RoHS:
Y
Speichergröße:
288 Mbit
Organisation:
16 M x 18
Zugriffszeit:
5.5 ns
Maximale Taktfrequenz:
250 MHz
Oberflächentyp:
Parallel
Versorgungsspannung - Max.:
3.6 V
Versorgungsspannung - Min.:
2.3 V
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 100 C
Montageart:
SMD/SMT
Paket / Koffer:
BGA-165
Verpackung:
Tablett
Speichertyp:
SDR
Serie:
GS8256418GD
Typ:
SCD/DCD; PL/FT
Marke:
GSI-Technologie
Feuchtigkeitsempfindlich:
ja
Produktart:
SRAM
Werkspackungsmenge:
10
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
SyncBurst
Tags
GS8256418GD-25, GS8256418GD-2, GS8256418GD, GS825641, GS8256, GS825, GS82, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Single 2.5V/3.3V 288Mbit 16M X 18 5.5ns 165-Pin FPBGA
***i-Key
IC SRAM 288MBIT PAR 165FPBGA
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Bild Teil # Beschreibung
24LC128-E/SN

Mfr.#: 24LC128-E/SN

OMO.#: OMO-24LC128-E-SN

EEPROM 16kx8 - 2.5V
LP2998MA/NOPB

Mfr.#: LP2998MA/NOPB

OMO.#: OMO-LP2998MA-NOPB

Power Management Specialized - PMIC DDR-I & DDR-II Termination Reg
LM4040BIM3-10.0/NOPB

Mfr.#: LM4040BIM3-10.0/NOPB

OMO.#: OMO-LM4040BIM3-10-0-NOPB

Voltage References Prec MicroPwr Shunt Vtg Ref
TPS7A6201QKTTRQ1

Mfr.#: TPS7A6201QKTTRQ1

OMO.#: OMO-TPS7A6201QKTTRQ1

LDO Voltage Regulators AC 300mA 40V LDO Reg
SI3443DV

Mfr.#: SI3443DV

OMO.#: OMO-SI3443DV-ON-SEMICONDUCTOR

MOSFET P-CH 20V 4A SSOT-6
LP2998MA/NOPB

Mfr.#: LP2998MA/NOPB

OMO.#: OMO-LP2998MA-NOPB-TEXAS-INSTRUMENTS

Power Management Specialized DDR-I & DDR-II Termination Reg
LM4040BIM3-10.0/NOPB

Mfr.#: LM4040BIM3-10.0/NOPB

OMO.#: OMO-LM4040BIM3-10-0-NOPB-TEXAS-INSTRUMENTS

Voltage References Prec MicroPwr Shunt Vtg Ref
TPS7A6201QKTTRQ1

Mfr.#: TPS7A6201QKTTRQ1

OMO.#: OMO-TPS7A6201QKTTRQ1-TEXAS-INSTRUMENTS

LDO Voltage Regulators AC 300mA 40V LDO Reg
CGB3B1JB1C225K055AC

Mfr.#: CGB3B1JB1C225K055AC

OMO.#: OMO-CGB3B1JB1C225K055AC-TDK

Multilayer Ceramic Capacitors MLCC - SMD/SMT 2.2uF 16volts JB1
24LC128-E/SN

Mfr.#: 24LC128-E/SN

OMO.#: OMO-24LC128-E-SN-MICROCHIP-TECHNOLOGY

EEPROM 16kx8 - 2.5V
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1991
Menge eingeben:
Der aktuelle Preis von GS8256418GD-250I dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
373,85 $
373,85 $
25
347,14 $
8 678,50 $
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