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SI2308BDS-T1-E3

SI2308BDS-T1-E3
Mfr. #:
SI2308BDS-T1-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 60V Vds 20V Vgs SOT-23
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2308BDS-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2308BDS-T1-E3 DatasheetSI2308BDS-T1-E3 Datasheet (P4-P6)SI2308BDS-T1-E3 Datasheet (P7-P9)SI2308BDS-T1-E3 Datasheet (P10)
ECAD Model:
Mehr Informationen:
SI2308BDS-T1-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
2.3 A
Rds On - Drain-Source-Widerstand:
156 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
6.8 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.66 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI2
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
5 S
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
10 ns
Typische Einschaltverzögerungszeit:
4 ns
Teil # Aliase:
SI2308BDS-E3
Gewichtseinheit:
0.000282 oz
Tags
SI2308BDS-T, SI2308B, SI2308, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 156 mOhm Surface Mount Power Mosfet - SOT-23-3
*** Source Electronics
Trans MOSFET N-CH 60V 2.3A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 2.3A SOT23-3
***ied Electronics & Automation
SI2308BDS-T1-E3 N-channel MOSFET Module; 2.3 A; 60 V; 3-Pin TO-236
***nell
MOSFET, N CH, 60V, 0.13OHM, 2.3A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.66W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Teil # Mfg. Beschreibung Aktie Preis
SI2308BDS-T1-E3
DISTI # V72:2272_07435022		Vishay IntertechnologiesTrans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R
RoHS: Compliant		254
  • 250:$0.3610
  • 100:$0.3645
  • 25:$0.4418
  • 10:$0.5399
  • 1:$0.6638
SI2308BDS-T1-E3
DISTI # V36:1790_07435022		Vishay IntertechnologiesTrans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000000:$0.1963
  • 1500000:$0.1965
  • 300000:$0.2012
  • 30000:$0.2074
  • 3000:$0.2084
SI2308BDS-T1-E3
DISTI # SI2308BDS-T1-E3CT-ND		Vishay SiliconixMOSFET N-CH 60V 2.3A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		74868In Stock
  • 1000:$0.1962
  • 500:$0.2539
  • 100:$0.3231
  • 10:$0.4330
  • 1:$0.5100
SI2308BDS-T1-E3
DISTI # SI2308BDS-T1-E3DKR-ND		Vishay SiliconixMOSFET N-CH 60V 2.3A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		74868In Stock
  • 1000:$0.1962
  • 500:$0.2539
  • 100:$0.3231
  • 10:$0.4330
  • 1:$0.5100
SI2308BDS-T1-E3
DISTI # SI2308BDS-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 60V 2.3A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		72000In Stock
  • 30000:$0.1434
  • 15000:$0.1512
  • 6000:$0.1625
  • 3000:$0.1736
SI2308BDS-T1-E3
DISTI # 32708464		Vishay IntertechnologiesTrans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R
RoHS: Compliant		254
  • 38:$0.6638
SI2308BDS-T1-E3
DISTI # SI2308BDS-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2308BDS-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 48000
  • 30000:$0.1538
  • 18000:$0.1581
  • 12000:$0.1626
  • 6000:$0.1695
  • 3000:$0.1747
SI2308BDS-T1-E3
DISTI # 69W7187		Vishay IntertechnologiesTrans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 69W7187)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1000:$0.2050
  • 500:$0.2650
  • 250:$0.2940
  • 100:$0.3220
  • 50:$0.3780
  • 25:$0.4340
  • 1:$0.5700
SI2308BDS-T1-E3
DISTI # 69W7187		Vishay IntertechnologiesMOSFET, N CHANNEL, 60V, 2.3A, SOT-23-3,Transistor Polarity:N Channel,Continuous Drain Current Id:2.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.13ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,MSL:- RoHS Compliant: Yes1504
  • 1000:$0.2590
  • 500:$0.3350
  • 250:$0.3700
  • 100:$0.4060
  • 50:$0.4780
  • 25:$0.5480
  • 1:$0.7080
SI2308BDS-T1-E3.
DISTI # 26AC3317		Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET ROHS COMPLIANT: NO48000
  • 50000:$0.1550
  • 30000:$0.1620
  • 20000:$0.1740
  • 10000:$0.1860
  • 5000:$0.2020
  • 1:$0.2070
SI2308BDS-T1-E3
DISTI # 70026194		Vishay SiliconixSI2308BDS-T1-E3 N-channel MOSFET Module,2.3 A,60 V,3-Pin TO-236
RoHS: Compliant		0
  • 3000:$0.2240
  • 6000:$0.2130
  • 9000:$0.1800
SI2308BDS-T1-E3/BKN
DISTI # 70026354		Vishay Siliconix60V,N-Channel 220 MOHM 4.5 V Rated MOSFET
RoHS: Compliant		0
  • 1:$0.3100
  • 100:$0.2800
  • 250:$0.2200
SI2308BDS-T1-E3
DISTI # 781-SI2308BDS-E3		Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs SOT-23
RoHS: Compliant		10392
  • 1:$0.5600
  • 10:$0.4330
  • 100:$0.3210
  • 500:$0.2640
  • 1000:$0.2040
  • 3000:$0.1850
SI2308BDS-T1-E3
DISTI # 1807271		Vishay IntertechnologiesN-CH MOSFET SOT-23 60V 130MOHM @ 10V - L, RL2540
  • 6000:£0.1530
  • 3000:£0.1620
SI2308BDS-T1-E3
DISTI # 2459410		Vishay IntertechnologiesMOSFET, N CHANNEL, 60V, 2.3A, SOT-23-3
RoHS: Compliant		1504
  • 1000:$0.2960
  • 500:$0.3830
  • 100:$0.4870
  • 10:$0.6530
  • 1:$0.7700
SI2308BDS-T1-E3
DISTI # 2335286		Vishay IntertechnologiesMOSFET, N CH, 60V, 0.13OHM, 2.3A, SOT-23
RoHS: Compliant		0
  • 1000:$0.2960
  • 500:$0.3830
  • 100:$0.4870
  • 10:$0.6530
  • 1:$0.7700
SI2308BDS-T1-E3
DISTI # 2459410		Vishay IntertechnologiesMOSFET, N CHANNEL, 60V, 2.3A, SOT-23-31354
  • 250:£0.3350
  • 100:£0.3680
  • 50:£0.4320
  • 25:£0.4960
  • 1:£0.6410
SI2308BDS-T1-E3Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs SOT-23
RoHS: Compliant		Americas - 3000
    Bild Teil # Beschreibung
    SMAJ30A-TR

    Mfr.#: SMAJ30A-TR

    OMO.#: OMO-SMAJ30A-TR

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    OMO.#: OMO-SI1062X-T1-GE3

    		 MOSFET 20V Vds 8V Vgs SC89-3
    NTR2101PT1G

    Mfr.#: NTR2101PT1G

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    		 MOSFET -8V 3.7A P-Channel
    BAT 60B E6327

    Mfr.#: BAT 60B E6327

    OMO.#: OMO-BAT-60B-E6327

    		 Schottky Diodes & Rectifiers Silicon Schottky Diode
    GRM1555C1H180JA01D

    Mfr.#: GRM1555C1H180JA01D

    OMO.#: OMO-GRM1555C1H180JA01D

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT RECOMMENDED ALT 81-GRM0335C1H180JA1D
    MCT06030C1000FP500

    Mfr.#: MCT06030C1000FP500

    OMO.#: OMO-MCT06030C1000FP500

    		 Thin Film Resistors - SMD .1W 100ohm 1% 0603 50ppm Auto
    GRM1555C1H180JA01D

    Mfr.#: GRM1555C1H180JA01D

    OMO.#: OMO-GRM1555C1H180JA01D-MURATA-ELECTRONICS

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 18pF 50volts C0G 5%
    SMAJ30A-TR

    Mfr.#: SMAJ30A-TR

    OMO.#: OMO-SMAJ30A-TR-STMICROELECTRONICS

    		 TVS DIODE 30V 64.3V SMA
    SI1062X-T1-GE3

    Mfr.#: SI1062X-T1-GE3

    OMO.#: OMO-SI1062X-T1-GE3-VISHAY

    		 MOSFET N-CH 20V SC-89
    NTR2101PT1G

    Mfr.#: NTR2101PT1G

    OMO.#: OMO-NTR2101PT1G-ON-SEMICONDUCTOR

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    15
    Auf Bestellung:
    1998
    Menge eingeben:
    Der aktuelle Preis von SI2308BDS-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,56 $
    0,56 $
    10
    0,43 $
    4,33 $
    100
    0,32 $
    32,10 $
    500
    0,26 $
    132,00 $
    1000
    0,20 $
    204,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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