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FDB0105N407L

FDB0105N407L
Mfr. #:
FDB0105N407L
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET N-CH 40V 460A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDB0105N407L Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDB0105N407L Mehr Informationen
Produkteigenschaft
Attributwert
Tags
FDB01, FDB0, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel PowerTrench® MOSFET 40 V 460A, 0.8mΩ
***ical
Trans MOSFET N-CH 40V 460A 7-Pin(6+Tab) D2PAK
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
N-Channel PowerTrench® MOSFETs
ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more
Teil # Mfg. Beschreibung Aktie Preis
FDB0105N407L
DISTI # V72:2272_14701470		ON Semiconductor150V 6.9MOHM TO263 7L JEDEC GR53
  • 25:$4.3000
  • 10:$4.8860
  • 1:$6.9652
FDB0105N407L
DISTI # V36:1790_14701470		ON Semiconductor150V 6.9MOHM TO263 7L JEDEC GR0
  • 800000:$2.2790
  • 400000:$2.2820
  • 80000:$2.6360
  • 8000:$3.2980
  • 800:$3.4100
FDB0105N407L
DISTI # FDB0105N407LTR-ND		ON SemiconductorMOSFET N-CH 40V 460A
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		On Order
  • 2400:$2.7323
  • 1600:$2.8761
  • 800:$3.4102
FDB0105N407L
DISTI # FDB0105N407LCT-ND		ON SemiconductorMOSFET N-CH 40V 460A
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 100:$4.1261
  • 10:$5.0360
  • 1:$5.6100
FDB0105N407L
DISTI # FDB0105N407LDKR-ND		ON SemiconductorMOSFET N-CH 40V 460A
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 100:$4.1261
  • 10:$5.0360
  • 1:$5.6100
FDB0105N407L
DISTI # 30186034		ON Semiconductor150V 6.9MOHM TO263 7L JEDEC GR800
  • 800:$2.6103
FDB0105N407L
DISTI # 30276460		ON Semiconductor150V 6.9MOHM TO263 7L JEDEC GR53
  • 3:$6.9652
FDB0105N407L
DISTI # FDB0105N407L		ON Semiconductor40 V N-Channel PowerTrench MOSFET (Alt: FDB0105N407L)
RoHS: Compliant
Min Qty: 800		Europe - 0
  • 8000:€2.2900
  • 4800:€2.3900
  • 3200:€2.5900
  • 1600:€2.6900
  • 800:€2.7900
FDB0105N407L
DISTI # FDB0105N407L		ON Semiconductor40 V N-Channel PowerTrench MOSFET (Alt: FDB0105N407L)
RoHS: Compliant
Min Qty: 800		Asia - 0
  • 40000:$3.2074
  • 20000:$3.2608
  • 8000:$3.3733
  • 4000:$3.4937
  • 2400:$3.6231
  • 1600:$3.7625
  • 800:$3.9130
FDB0105N407L
DISTI # FDB0105N407L		ON Semiconductor40 V N-Channel PowerTrench MOSFET - Tape and Reel (Alt: FDB0105N407L)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 4800:$2.3900
  • 8000:$2.3900
  • 800:$2.4900
  • 1600:$2.4900
  • 3200:$2.4900
FDB0105N407L
DISTI # 84Y5821		ON SemiconductorMOSFET, N-CH, 40V, 460A, TO-220-7,Transistor Polarity:N Channel,Continuous Drain Current Id:460A,Drain Source Voltage Vds:40V,On Resistance Rds(on):600µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes622
  • 100:$4.8300
  • 50:$5.1600
  • 25:$5.4800
  • 10:$5.8000
  • 1:$6.4000
FDB0105N407L
DISTI # 512-FDB0105N407L		ON SemiconductorMOSFET 40V N-Channel Power Trench MOSFET
RoHS: Compliant		466
  • 1:$5.1800
  • 10:$4.4100
  • 100:$3.8200
  • 250:$3.6200
  • 500:$3.2500
  • 800:$2.7400
  • 2400:$2.6100
FDB0105N407L
DISTI # 2565219		ON SemiconductorMOSFET, N-CH, 40V, 460A, TO-220-7
RoHS: Compliant		622
  • 100:$5.5700
  • 10:$6.4200
  • 1:$7.3700
FDB0105N407L
DISTI # 2565219		ON SemiconductorMOSFET, N-CH, 40V, 460A, TO-220-7628
  • 500:£1.9000
  • 250:£2.5100
  • 100:£2.6600
  • 10:£3.0500
  • 1:£4.4300
Bild Teil # Beschreibung
FDB0105N407L

Mfr.#: FDB0105N407L

OMO.#: OMO-FDB0105N407L

 MOSFET 40V N-Channel Power Trench MOSFET
FDB0105N407L

Mfr.#: FDB0105N407L

OMO.#: OMO-FDB0105N407L-ON-SEMICONDUCTOR

 MOSFET N-CH 40V 460A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von FDB0105N407L dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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