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FDPF2D3N10C

FDPF2D3N10C
Mfr. #:
FDPF2D3N10C
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET PTNG N-CH 100V/120V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDPF2D3N10C Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220F-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
222 A
Rds On - Drain-Source-Widerstand:
2.1 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
152 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
45 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Serie:
FDPF2D3N10C
Transistortyp:
1 N-Channel
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
222 S
Abfallzeit:
32 ns
Produktart:
MOSFET
Anstiegszeit:
35 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
74 ns
Typische Einschaltverzögerungszeit:
42 ns
Gewichtseinheit:
0.080072 oz
Tags
FDPF2, FDPF, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
PowerTrench MOSFET N-Channel Shielded Gate 100 V 76 A 8.5m Ohm 3-Pin TO-220F
***et
Transistor MOSFET N-CH 100V 222A 3-Pin TO-220F T/R
***ical
Trans MOSFET N-CH 100V 222A 3-Pin(3+Tab) TO-220FP Tube
***emi
N-Channel PowerTrench® MOSFET, Shielded Gate, 100V, 222A, 2.3mΩ N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 222A, 2.3mΩ
***rchild Semiconductor
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Teil # Mfg. Beschreibung Aktie Preis
FDPF2D3N10C
DISTI # 26641421		ON SemiconductorN-Channel Shielded Gate PowerTrench MOSFET6000
  • 1000:$4.0293
FDPF2D3N10C
DISTI # FDPF2D3N10C-ND		ON SemiconductorMOSFET N-CH 100V 222A TO220F
RoHS: Not compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$3.6322
FDPF2D3N10C
DISTI # V36:1790_18468182		ON SemiconductorN-Channel Shielded Gate PowerTrench MOSFET0
    FDPF2D3N10C
    DISTI # FDPF2D3N10C    		ON SemiconductorPowerTrench MOSFET N-Channel Shielded Gate 100 V 76 A 8.5m Ohm 3-Pin TO-220F - Rail/Tube (Alt: FDPF2D3N10C)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Americas - 0
    • 10000:$3.8900
    • 4000:$3.9900
    • 6000:$3.9900
    • 1000:$4.0900
    • 2000:$4.0900
    FDPF2D3N10C
    DISTI # 22AC8208    		ON SemiconductorMOSFET, N-CH, 100V, 222A, TO-220F,Transistor Polarity:N Channel,Continuous Drain Current Id:222A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0021ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes613
    • 500:$4.0700
    • 250:$4.5300
    • 100:$4.7800
    • 50:$5.0200
    • 25:$5.2600
    • 10:$5.5000
    • 1:$6.4800
    FDPF2D3N10C
    DISTI # 512-FDPF2D3N10C    		ON SemiconductorMOSFET PTNG N-CH 100V/120V
    RoHS: Compliant    		746
    • 1:$6.5400
    • 10:$5.5500
    • 100:$4.8100
    • 250:$4.5700
    • 500:$4.1000
    • 1000:$3.4500
    • 2000:$3.2800
    FDPF2D3N10C
    DISTI # 1811861    		ON SemiconductorPTNG 100/20V IN TO220F 3L, TU990
    • 2000:£2.3750
    • 1000:£2.5450
    FDPF2D3N10C
    DISTI # 2768334    		ON SemiconductorMOSFET, N-CH, 100V, 222A, TO-220F613
    • 500:£3.1700
    • 250:£3.5200
    • 100:£3.7200
    • 10:£4.2800
    • 1:£5.5500
    FDPF2D3N10C
    DISTI # 2768334    		ON SemiconductorMOSFET, N-CH, 100V, 222A, TO-220F
    RoHS: Compliant    		613
    • 1000:$4.9900
    • 500:$5.5100
    • 250:$6.2800
    • 100:$6.9800
    • 10:$8.0400
    • 1:$9.2300
    Bild Teil # Beschreibung
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    Mfr.#: FG28C0G2A103JRT06

    OMO.#: OMO-FG28C0G2A103JRT06-TDK

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    BQ76200PWR

    Mfr.#: BQ76200PWR

    OMO.#: OMO-BQ76200PWR-TEXAS-INSTRUMENTS

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    OMO.#: OMO-BQ78350DBTR-R1-TEXAS-INSTRUMENTS

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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von FDPF2D3N10C dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    6,54 $
    6,54 $
    10
    5,55 $
    55,50 $
    100
    4,81 $
    481,00 $
    250
    4,57 $
    1 142,50 $
    500
    4,10 $
    2 050,00 $
    1000
    3,45 $
    3 450,00 $
    2000
    3,28 $
    6 560,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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