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IRF8252PBF

IRF8252PBF
Mfr. #:
IRF8252PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 25V 1 N-CH HEXFET 2.7mOhms 35nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF8252PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8252PBF DatasheetIRF8252PBF Datasheet (P4-P6)IRF8252PBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
25 V
Id - Kontinuierlicher Drainstrom:
25 A
Rds On - Drain-Source-Widerstand:
3.7 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.35 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
35 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel
Typ:
HEXFET Leistungs-MOSFET
Breite:
3.9 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
89 S
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
32 ns
Werkspackungsmenge:
95
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
19 ns
Typische Einschaltverzögerungszeit:
23 ns
Teil # Aliase:
SP001554466
Gewichtseinheit:
0.019048 oz
Tags
IRF825, IRF82, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 25V 25A 8-Pin SOIC Tube
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters, SO8, RoHS
***ment14 APAC
MOSFET, N-CH, 25V, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:25V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:SOIC-8; Power Dissipation Pd:2.5W; Pulse Current Idm:200A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V
***ark
Mosfet Transistor, N Channel, 24 A, 30 V, 0.0023 Ohm, 10 V, 1.8 V Rohs Compliant: Yes
***(Formerly Allied Electronics)
IRF8788PBF N-channel MOSFET Transistor,24 A, 30 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 2.8 mOhm 66 nC HEXFET® Power Mosfet - SOIC-8
***p One Stop
Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R
***nell
MOSFET, N-CH, 30V, SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0023ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissi
***ure Electronics
N-Channel 30 V 4.5 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ
***Yang
Trans MOSFET N-CH 30V 18.5A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
***ment14 APAC
MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.5mohm; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5mW; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:74A; Termination Type:SMD; Transistor Type:Trench; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
***ure Electronics
Single N-Channel 30 V 4.8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8
***roFlash
Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.32V; Power Dissi
***roFlash
IRF8736PBF N-channel MOSFET Transistor, 18 A, 30 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 6.8 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 30V 18A 8-Pin SOIC Tube / MOSFET N-CH 30V 18A 8-SOIC
***(Formerly Allied Electronics)
MOSFET; N Ch.; 30V; 18A; 4.8 MOHM; 17 NC QG; SO-8; Pb-Free
***ure Electronics
Si4156DY Series N-Channel 30 V 0.006 Ohm 6 W Surface Mount Power Mosfet - SOIC-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:24A; On Resistance Rds(On):0.0048Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:2.2V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes
***ment14 APAC
MOSFET,N CH,30V,24A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:15.7A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
***Yang
Trans MOSFET P-CH 30V 20A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
***ure Electronics
P-Channel 30 V 4.6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
P-Channel PowerTrench® MOSFET, 30V, -20A, 4.6mΩ
*** Electronics
ON SEMICONDUCTOR - FDS6681Z - MOSFET Transistor, P Channel, -20 A, -30 V, 0.0038 ohm, -10 V, -1.8 V
***et Europe
Trans MOSFET P-CH 30V 20A 8-Pin SOIC N T/R
***rchild Semiconductor
This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Teil # Mfg. Beschreibung Aktie Preis
IRF8252PBF
DISTI # IRF8252PBF-ND		Infineon Technologies AGMOSFET N-CH 25V 25A 8-SO
RoHS: Compliant
Min Qty: 3800
Container: Tube		Limited Supply - Call
    IRF8252PBF
    DISTI # IRF8252PBF    		Infineon Technologies AGTrans MOSFET N-CH 25V 25A 8-Pin SOIC - Rail/Tube (Alt: IRF8252PBF)
    RoHS: Compliant
    Min Qty: 3800
    Container: Tube    		Americas - 3930
      IRF8252PBFInternational RectifierPower Field-Effect Transistor, 25A I(D), 25V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET
      RoHS: Compliant      		1458
      • 1000:$0.6200
      • 500:$0.6500
      • 100:$0.6800
      • 25:$0.7100
      • 1:$0.7600
      IRF8252PBF
      DISTI # 942-IRF8252PBF      		Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 2.7mOhms 35nC
      RoHS: Compliant      		0
        IRF8252PBFInternational Rectifier25 A, 25 V, 0.0027 OHM, N-CHANNEL, SI, POWER, MOSFET40
        • 18:$0.6000
        • 5:$0.9000
        • 1:$1.2000
        IRF8252PBFInternational Rectifier 3325
          IRF8252PBF
          DISTI # 1688581          		Infineon Technologies AGMOSFET, N-CH, 25V, SO8
          RoHS: Compliant          		0
          • 1:$2.3600
          • 10:$1.9400
          • 100:$1.5700
          • 500:$1.4000
          • 1000:$1.2400
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          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1500
          Menge eingeben:
          Der aktuelle Preis von IRF8252PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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