OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IXTP160N10T

IXTP160N10T
Mfr. #:
IXTP160N10T
Hersteller:
IXYS
Beschreibung:
MOSFET 160 Amps 100V 6.9 Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTP160N10T Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTP160N10T DatasheetIXTP160N10T Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IXTP160N10
Verpackung
Rohr
Gewichtseinheit
0.081130 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
430 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
42 ns
Anstiegszeit
61 ns
ID-Dauer-Drain-Strom
160 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Widerstand
7 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
49 ns
Typische-Einschaltverzögerungszeit
33 ns
Kanal-Modus
Erweiterung
Tags
IXTP160, IXTP16, IXTP1, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 7 mOhm 132 nC TrenchMVTM Power MOSFET - TO-220-3
***ical
Trans MOSFET N-CH 100V 160A Automotive 3-Pin(3+Tab) TO-220
***ponent Stockers USA
160 A 100 V 0.007 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***icroelectronics
N-channel 100 V, 4.5 mOhm, 120 A STripFET(TM) III Power MOSFET in TO-220 package
***ow.cn
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 100 V, 4.1 mΩ, 160 A TO-220, H²PAK STripFET͐2;2; DeepGATE͐2;2; Power MOSFET
***ical
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220AB Tube
***ponent Stockers USA
120 A 100 V 0.0051 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-CHANNEL 75V - 0.0065 OHM -120A TO-220 STripFET II MOSFET
***ure Electronics
N-Channel 75 V 7.5 mO Flange Mount STripFET™III Power MosFet - TO-220
***ical
Trans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220AB Tube
***(Formerly Allied Electronics)
MOSFET N-Ch 75V 120A UltraFET III TO220
***nell
MOSFET, N CH, 75V, 120A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 120A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, QFET®, 100 V, 164 A, 4.7 mΩ, TO-220
***Yang
Trans MOSFET N-CH 100V 164A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***ure Electronics
FDP047N10 Series 100 V 164 A 4.7 mOhm N-Channel PowerTrench Mosfet - TO-220-3
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET,N CH,100V,120A,TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011)
***ure Electronics
N-Channel 100 V 5.5 mO 203 nC Flange Mount PowerTrench® Mosfet - TO-220AB
***Yang
Trans MOSFET N-CH 100V 144A 3-Pin(3+Tab) TO-220 T/R - Rail/Tube
***emi
N-Channel PowerTrench® MOSFET 100V, 144A, 5.5mΩ
*** Electronics
FAIRCHILD SEMICONDUCTOR FDP054N10 MOSFET Transistor, N Channel, 120 A, 100 V, 0.0046 ohm, 10 V, 3.5 V
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 100V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:263W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:576A
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ark
100V 4.5MOHM TO220 3L JEDEC GREEN EMC - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB (F102)
***emi
N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ
***ical
Trans MOSFET N-CH Si 100V 164A 3-Pin(3+Tab) TO-220 Rail
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Teil # Mfg. Beschreibung Aktie Preis
IXTP160N10T
DISTI # 31006701		IXYS CorporationTrans MOSFET N-CH 100V 160A 3-Pin(3+Tab) TO-220
RoHS: Compliant		50
  • 1000:$1.8856
  • 500:$2.2358
  • 100:$2.7612
  • 10:$3.3677
IXTP160N10T
DISTI # IXTP160N10T-ND		IXYS CorporationMOSFET N-CH 100V 160A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$1.8788
  • 500:$2.2277
  • 100:$2.7511
  • 50:$3.0196
  • 1:$3.7600
IXTP160N10T
DISTI # C1S331700027304		IXYS CorporationTrans MOSFET N-CH 100V 160A Automotive 3-Pin(3+Tab) TO-220
RoHS: Compliant		50
  • 50:$3.0200
  • 10:$3.6800
  • 1:$5.6700
IXTP160N10T
DISTI # 747-IXTP160N10T		IXYS CorporationMOSFET 160 Amps 100V 6.9 Rds
RoHS: Compliant		0
    Bild Teil # Beschreibung
    IXTP12N70X2

    Mfr.#: IXTP12N70X2

    OMO.#: OMO-IXTP12N70X2

    		 Discrete Semiconductor Modules DiscMSFT NChUltraJnctX2Class TO-220AB/FP
    IXTP1R4N100P

    Mfr.#: IXTP1R4N100P

    OMO.#: OMO-IXTP1R4N100P

    		 MOSFET 1.4 Amps 1000V 11 Rds
    IXTP12N50P

    Mfr.#: IXTP12N50P

    OMO.#: OMO-IXTP12N50P

    		 MOSFET 12 Amps 500V 0.5 Ohm Rds
    IXTP120N04T2

    Mfr.#: IXTP120N04T2

    OMO.#: OMO-IXTP120N04T2

    		 MOSFET 120 Amps 40V
    IXTP110N055

    Mfr.#: IXTP110N055

    OMO.#: OMO-IXTP110N055-1190

    		 Neu und Original
    IXTP160N075T

    Mfr.#: IXTP160N075T

    OMO.#: OMO-IXTP160N075T-IXYS-CORPORATION

    		 MOSFET N-CH 75V 160A TO-220
    IXTP102N15T

    Mfr.#: IXTP102N15T

    OMO.#: OMO-IXTP102N15T-IXYS-CORPORATION

    		 IGBT Transistors MOSFET 102 Amps 150V 18 Rds
    IXTP120P065T

    Mfr.#: IXTP120P065T

    OMO.#: OMO-IXTP120P065T-IXYS-CORPORATION

    		 IGBT Transistors MOSFET -120 Amps -65V 0.01 Rds
    IXTP1R4N100P

    Mfr.#: IXTP1R4N100P

    OMO.#: OMO-IXTP1R4N100P-IXYS-CORPORATION

    		 IGBT Transistors MOSFET 1.4 Amps 1000V 11 Rds
    IXTP1R4N60P

    Mfr.#: IXTP1R4N60P

    OMO.#: OMO-IXTP1R4N60P-IXYS-CORPORATION

    		 IGBT Transistors MOSFET 1.4 Amps 600 V 8 Ohm Rds
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1000
    Menge eingeben:
    Der aktuelle Preis von IXTP160N10T dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,95 $
    2,95 $
    10
    2,80 $
    27,99 $
    100
    2,65 $
    265,17 $
    500
    2,50 $
    1 252,20 $
    1000
    2,36 $
    2 357,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Neueste Produkte
    • A6211 LED Driver
      A6211 LED Driver
      Allegro's A6211 device integrates a high-side N-channel MOSFET switch for DC-to-DC stepdown (buck) conversion with a wide input supply voltage from 6 to 48 V.
    • WP-SMRT REDCUBE SMT Terminal
      WP-SMRT REDCUBE SMT Terminal
      Wurth Electronics' REDCUBE portfolio has been extended with a reverse-type surface-mount terminal with internal through-hole.
    • Compare IXTP160N10T
      Compare IXTP160N10T
      IXTP160N04T2 vs IXTP160N075T vs IXTP160N10T
    • JCH Series DC-DC Converters
      JCH Series DC-DC Converters
      XP Power's JCH Series of DC-DC Converters are aimed for a broad range of telecom, networking, and industrial applications.
    • DDR3 SDRAM with ECC
      DDR3 SDRAM with ECC
      ISSI offers its IS46TR16640ED, 1-Gbit DDR3 DRAMs that has an embedded error correcting code (ECC), which detects and corrects bit errors on-the-fly.
    • SCALE-iDriver™ Gate Driver ICs
      SCALE-iDriver™ Gate Driver ICs
      Power Integrations' SCALE-iDriver family of gate driver ICs are single-channel IGBT and MOSFET drivers in a standard eSOP package.
    More Newest Products
    Top