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BGAU1A10E6327XTSA1

BGAU1A10E6327XTSA1
Mfr. #:
BGAU1A10E6327XTSA1
Hersteller:
Infineon Technologies
Beschreibung:
RF Amplifier RF SILICON MMIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BGAU1A10E6327XTSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BGAU1A10E6327XTSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
HF-Verstärker
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
ATSLP
Typ:
LNA
Arbeitsfrequenz:
5.15 GHz to 5.914 GHz
P1dB - Kompressionspunkt:
3 dBm
Gewinnen:
27 dB
Betriebsversorgungsspannung:
1.8 V
NF - Rauschzahl:
1.6 dB
Testhäufigkeit:
5500 MHz
OIP3 - Abfangen dritter Ordnung:
30 dBm
Betriebsversorgungsstrom:
5 mA
Minimale Betriebstemperatur:
- 30 C
Maximale Betriebstemperatur:
+ 85 C
Verpackung:
Spule
Marke:
Infineon-Technologien
Anzahl der Kanäle:
1 Channel
Eingangsrückflussdämpfung:
20 dB
Isolation dB:
38 dB
Feuchtigkeitsempfindlich:
ja
Pd - Verlustleistung:
90 mW
Produktart:
HF-Verstärker
Werkspackungsmenge:
4500
Unterkategorie:
Drahtlose und integrierte HF-Schaltungen
Teil # Aliase:
BGA E6327 SP001628070 U1A10
Tags
BGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
RF Low Noise Amp Single 5.15GHz to 5.925GHz -18dB 10-Pin ATSLP-3 T/R
***ment14 APAC
RF AMPLIFIER, 5.925GHZ, -30 TO 85DEG C
***ark
Rf Amplifier, 5.925Ghz, -30 To 85Deg C; Frequency Min:5.15Ghz; Frequency Max:5.925Ghz; Gain:20.5Db; Noise Figure Typ:1.6Db; Rf Ic Case Style:atslp; No. Of Pins:10Pins; Supply Voltage Min:1.7V; Supply Voltage Max:1.9V; Operating Rohs Compliant: Yes
BGAx1A10 LTE LNA with Gain Control
Infineon Technologies BGAx1A10 LTE Low Noise Amplifiers (LNA) with Gain Control are designed to significantly improve the data rate. These BGAx1A10 LNAs feature an integrated gain control, bypass function, high system flexibility, 27dB gain dynamic range, and a low noise figure. The bypass mode reduces current consumption and the Mobile Industry Processor Interface (MIPI) control interface reduces the control lines to a minimum. The BGAx1A10 LNAs ensures high LTE data rates due to high gain feature and higher system flexibility due to integrated gain control. These BGAx1A10 LNAs offer best noise figure in the high gain mode that guarantees high data rates even on the LTE cell edge. The BGAx1A10 LNAs are ideal for use in smartphones.
Teil # Mfg. Beschreibung Aktie Preis
BGAU1A10E6327XTSA1
DISTI # BGAU1A10E6327XTSA1CT-ND		Infineon Technologies AGIC RF AMP 5GHZ 10ATSLP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3300In Stock
  • 1000:$0.3862
  • 500:$0.4893
  • 100:$0.5923
  • 10:$0.7600
  • 1:$0.8500
BGAU1A10E6327XTSA1
DISTI # BGAU1A10E6327XTSA1DKR-ND		Infineon Technologies AGIC RF AMP 5GHZ 10ATSLP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3300In Stock
  • 1000:$0.3862
  • 500:$0.4893
  • 100:$0.5923
  • 10:$0.7600
  • 1:$0.8500
BGAU1A10E6327XTSA1
DISTI # BGAU1A10E6327XTSA1TR-ND		Infineon Technologies AGIC RF AMP 5GHZ 10ATSLP
RoHS: Compliant
Min Qty: 4500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 31500:$0.3100
  • 13500:$0.3200
  • 9000:$0.3325
  • 4500:$0.3500
BGAU1A10E6327XTSA1
DISTI # SP001628070		Infineon Technologies AGRF SILICON MMIC (Alt: SP001628070)
RoHS: Compliant
Min Qty: 4500		Europe - 4500
  • 45000:€0.3659
  • 27000:€0.3859
  • 18000:€0.4499
  • 9000:€0.5279
  • 4500:€0.6139
BGAU1A10E6327XTSA1
DISTI # BGAU1A10E6327XTSA1		Infineon Technologies AGRF SILICON MMIC - Tape and Reel (Alt: BGAU1A10E6327XTSA1)
RoHS: Compliant
Min Qty: 4500
Container: Reel		Americas - 0
  • 45000:$0.3169
  • 27000:$0.3229
  • 18000:$0.3339
  • 9000:$0.3469
  • 4500:$0.3599
BGAU1A10E6327XTSA1
DISTI # 81AC4450		Infineon Technologies AGRF AMPLIFIER, 5.925GHZ, -30 TO 85DEG C,Frequency Min:5.15GHz,Frequency Max:5.925GHz,Gain:20.5dB,Noise Figure Typ:1.6dB,RF IC Case Style:ATSLP,No. of Pins:10Pins,Supply Voltage Min:1.7V,Supply Voltage Max:1.9V,Operating RoHS Compliant: Yes4500
  • 1000:$0.3790
  • 500:$0.4810
  • 250:$0.5120
  • 100:$0.5430
  • 50:$0.5980
  • 25:$0.6520
  • 10:$0.7070
  • 1:$0.8380
BGAU1A10E6327XTSA1
DISTI # 726-BGAU1A10E6327XTS		Infineon Technologies AGRF Amplifier RF SILICON MMIC
RoHS: Compliant		3009
  • 1:$0.8300
  • 10:$0.7000
  • 100:$0.5380
  • 500:$0.4760
  • 1000:$0.3750
  • 2500:$0.3330
  • 4500:$0.3330
  • 9000:$0.3210
  • 22500:$0.3100
BGAU1A10E6327XTSA1
DISTI # 2947798		Infineon Technologies AGRF AMPLIFIER, 5.925GHZ, -30 TO 85DEG C4500
  • 500:£0.3450
  • 250:£0.3680
  • 100:£0.3900
  • 50:£0.5070
  • 1:£0.5800
BGAU1A10E6327XTSA1
DISTI # XSKDRABV0044651		Infineon Technologies AGRFSmallSignalBipolarTransistor,0.03AI(C),2-Element,LBand,Silicon,NPN
RoHS: Compliant		13500 in Stock0 on Order
  • 13500:$0.4880
  • 4500:$0.5229
BGAU1A10E6327XTSA1
DISTI # 2947798		Infineon Technologies AGRF AMPLIFIER, 5.925GHZ, -30 TO 85DEG C
RoHS: Compliant		4500
  • 1:$0.5580
Bild Teil # Beschreibung
F1975NCGI

Mfr.#: F1975NCGI

OMO.#: OMO-F1975NCGI

 Attenuators F1975 RF Switch
NSVMMBT2222AM3T5G

Mfr.#: NSVMMBT2222AM3T5G

OMO.#: OMO-NSVMMBT2222AM3T5G

 Bipolar Transistors - BJT SS SOT-723 GP TRANSISTOR
SBAS21LT1G

Mfr.#: SBAS21LT1G

OMO.#: OMO-SBAS21LT1G

 Diodes - General Purpose, Power, Switching SS SWCH DIO SPCL
LMH2110TMX/NOPB

Mfr.#: LMH2110TMX/NOPB

OMO.#: OMO-LMH2110TMX-NOPB

 RF Detector 8 GHz Logarithmic RMS Power Detector With 45 dB Dynamic Range 6-DSBGA -40 to 85
MP4570GF-Z

Mfr.#: MP4570GF-Z

OMO.#: OMO-MP4570GF-Z

 Switching Voltage Regulators 3A,4.5V-55V Input, Freqcy Programmable
NSVMMBT2222AM3T5G

Mfr.#: NSVMMBT2222AM3T5G

OMO.#: OMO-NSVMMBT2222AM3T5G-ON-SEMICONDUCTOR

 SS SOT-723 GP TRANSISTOR
LTST-C170YKT

Mfr.#: LTST-C170YKT

OMO.#: OMO-LTST-C170YKT-LITE-ON

 Standard LEDs - SMD Yellow Clear 588nm
LMH2110TMX/NOPB

Mfr.#: LMH2110TMX/NOPB

OMO.#: OMO-LMH2110TMX-NOPB-TEXAS-INSTRUMENTS

 RF Detector 8 GHz Logarithmic RMS Power Detector wit
CGA3E2X7R2A103K080AA

Mfr.#: CGA3E2X7R2A103K080AA

OMO.#: OMO-CGA3E2X7R2A103K080AA-TDK

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 0.01uF 100volts X7R 10% T=0.8mm
F1975NCGI

Mfr.#: F1975NCGI

OMO.#: OMO-F1975NCGI-INTEGRATED-DEVICE-TECH

 Active Attenuator Attenuators F1975 RF Switch
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von BGAU1A10E6327XTSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,83 $
0,83 $
10
0,70 $
7,00 $
100
0,54 $
53,80 $
500
0,48 $
238,00 $
1000
0,38 $
375,00 $
2500
0,33 $
832,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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