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IXFN120N65X2

IXFN120N65X2
Mfr. #:
IXFN120N65X2
Hersteller:
Littelfuse
Beschreibung:
MOSFET 650V/108A Ultra Junction X2-Class
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFN120N65X2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN120N65X2 DatasheetIXFN120N65X2 Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFN120N65X2 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Chassishalterung
Paket / Koffer:
SOT-227-4
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
108 A
Rds On - Drain-Source-Widerstand:
24 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.7 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
225 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
890 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
650V Ultra Junction X2
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
46 S
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
23 ns
Werkspackungsmenge:
10
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
86 ns
Typische Einschaltverzögerungszeit:
64 ns
Gewichtseinheit:
1.058219 oz
Tags
IXFN12, IXFN1, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 650 V 108 A 890 W Surface Mount X2-Class HiPerFETTM Mosfet - SOT-227B
***i-Key
MOSFET N-CH 650V 108A SOT227B
*** Services
CoC and 2-years warranty / RFQ for pricing
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFET™
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Teil # Mfg. Beschreibung Aktie Preis
IXFN120N65X2
DISTI # V36:1790_15877025		IXYS CorporationTrans MOSFET N-CH 650V 108A 4-Pin SOT-227B0
    IXFN120N65X2
    DISTI # IXFN120N65X2-ND    		IXYS CorporationMOSFET N-CH 650V 108A SOT-227
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		On Order
    • 500:$19.5720
    • 100:$22.0884
    • 30:$23.7660
    • 10:$25.8630
    • 1:$27.9600
    IXFN120N65X2
    DISTI # 747-IXFN120N65X2    		IXYS CorporationMOSFET 650V/108A Ultra Junction X2-Class
    RoHS: Compliant    		101
    • 1:$27.9600
    • 5:$26.5600
    • 10:$25.8600
    • 25:$23.7700
    • 50:$22.7500
    • 100:$22.0800
    • 200:$20.2700
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    Verfügbarkeit
    Aktie:
    341
    Auf Bestellung:
    2324
    Menge eingeben:
    Der aktuelle Preis von IXFN120N65X2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    27,96 $
    27,96 $
    5
    26,56 $
    132,80 $
    10
    25,86 $
    258,60 $
    25
    23,77 $
    594,25 $
    50
    22,75 $
    1 137,50 $
    100
    22,08 $
    2 208,00 $
    200
    20,27 $
    4 054,00 $
    500
    19,29 $
    9 645,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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