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SIHB180N60E-GE3

SIHB180N60E-GE3
Mfr. #:
SIHB180N60E-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHB180N60E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHB180N60E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
19 A
Rds On - Drain-Source-Widerstand:
180 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
33 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
156 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Serie:
E
Transistortyp:
1 N-Channel E-Series Power MOSFET
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
5.3 S
Abfallzeit:
23 ns
Produktart:
MOSFET
Anstiegszeit:
49 ns
Werkspackungsmenge:
1
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
22 ns
Typische Einschaltverzögerungszeit:
14 ns
Tags
SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
4th Gen E Series MOSFETs
Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHB180N60E-GE3
DISTI # V99:2348_22712077		Vishay IntertechnologiesE Series Power MOSFET D2PAK (TO-263), 180 m @ 10V996
  • 5000:$1.5870
  • 2500:$1.6139
  • 1000:$1.6990
  • 500:$1.9150
  • 250:$2.2040
  • 100:$2.2720
  • 10:$2.8430
  • 1:$3.1980
SIHB180N60E-GE3
DISTI # SIHB180N60E-GE3-ND		Vishay SiliconixMOSFET N-CH D2PAK TO-263
Min Qty: 1
Container: Bulk		1020In Stock
  • 2500:$1.6159
  • 1000:$1.7010
  • 500:$2.0169
  • 100:$2.3693
  • 10:$2.8920
  • 1:$3.2200
SIHB180N60E-GE3
DISTI # 33629188		Vishay IntertechnologiesE Series Power MOSFET D2PAK (TO-263), 180 m @ 10V996
  • 5000:$1.5870
  • 2500:$1.6139
  • 1000:$1.6990
  • 500:$1.9150
  • 250:$2.2040
  • 100:$2.2720
  • 10:$2.8430
  • 4:$3.1980
SIHB180N60E-GE3
DISTI # SIHB180N60E-GE3		Vishay Intertechnologies(Alt: SIHB180N60E-GE3)
Min Qty: 1		Europe - 0
  • 1000:€1.4048
  • 500:€1.4423
  • 100:€1.4798
  • 50:€1.5547
  • 25:€1.6483
  • 10:€1.7420
  • 1:€1.8731
SIHB180N60E-GE3
DISTI # SIHB180N60E-GE3		Vishay Intertechnologies- Tape and Reel (Alt: SIHB180N60E-GE3)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$1.5577
  • 6000:$1.6008
  • 4000:$1.6463
  • 2000:$1.7161
  • 1000:$1.7686
SIHB180N60E-GE3
DISTI # 99AC9552		Vishay IntertechnologiesMOSFET, N-CH, 19A, 600V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power DissipationRoHS Compliant: Yes
RoHS: Compliant		24
  • 500:$2.0100
  • 250:$2.2400
  • 100:$2.3200
  • 50:$2.4900
  • 25:$2.6500
  • 10:$2.8200
  • 1:$3.4000
SIHB180N60E-GE3
DISTI # 78-SIHB180N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		964
  • 1:$3.3800
  • 10:$2.9000
  • 100:$2.2900
  • 250:$2.2300
  • 500:$1.9700
  • 1000:$1.7300
  • 2500:$1.6400
  • 5000:$1.5800
SIHB180N60E-GE3
DISTI # 3019077		Vishay IntertechnologiesMOSFET, N-CH, 19A, 600V, TO-263
RoHS: Compliant		24
  • 5000:$2.4500
  • 2500:$2.5400
  • 1000:$2.6800
  • 500:$3.1700
  • 100:$3.7300
  • 10:$4.5500
  • 1:$5.0600
SIHB180N60E-GE3
DISTI # 3019077RL		Vishay IntertechnologiesMOSFET, N-CH, 19A, 600V, TO-263
RoHS: Compliant		0
  • 1000:£1.3400
  • 500:£1.6800
  • 250:£1.8600
  • 100:£1.9400
  • 10:£2.3400
  • 1:£3.1800
SIHB180N60E-GE3
DISTI # 3019077		Vishay IntertechnologiesMOSFET, N-CH, 19A, 600V, TO-263
RoHS: Compliant		24
  • 1000:£1.3400
  • 500:£1.6800
  • 250:£1.8600
  • 100:£1.9400
  • 10:£2.3400
  • 1:£3.1800
Bild Teil # Beschreibung
SIHB180N60E-GE3

Mfr.#: SIHB180N60E-GE3

OMO.#: OMO-SIHB180N60E-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB180N60E-GE3

Mfr.#: SIHB180N60E-GE3

OMO.#: OMO-SIHB180N60E-GE3-VISHAY

 E Series Power MOSFET D2PAK (TO-263), 180 m @ 10V
Verfügbarkeit
Aktie:
994
Auf Bestellung:
2977
Menge eingeben:
Der aktuelle Preis von SIHB180N60E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,40 $
3,40 $
10
2,82 $
28,20 $
100
2,32 $
232,00 $
250
2,24 $
560,00 $
500
2,01 $
1 005,00 $
1000
1,70 $
1 700,00 $
2500
1,61 $
4 025,00 $
5000
1,55 $
7 750,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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