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IRFB3256PBF

IRFB3256PBF
Mfr. #:
IRFB3256PBF
Hersteller:
Infineon Technologies
Beschreibung:
Darlington Transistors MOSFET MOSFET, 60V, 210A, 3 130 nC Qg, TO-220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFB3256PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Internationaler Gleichrichter
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Tags
IRFB32, IRFB3, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Push-Pull
***ernational Rectifier
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***Components
Transistor MOSFET N-ch 60V 75A TO-220AB
***ark
TUBE / MOSFET, 60V, 210A, 3.4 mOhm, 130 nC Qg, TO-220AB
***ical
Trans MOSFET N-CH 60V 206A 3-Pin(3+Tab) TO-220AB
***et Europe
Trans MOSFET N-CH 60V 206A 3-Pin TO-220AB Tube
***et
MOSFET, 60V, 210A, 3.4 MOHM, 130 NC QG, TO-220AB
***i-Key
MOSFET N CH 60V 75A TO-220AB
***ukat
N-Ch 60V 75A 300W 0,0034R TO220AB
***ronik
N-CH 60V 75A 2,7mOhm TO-220AB
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 75A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 60V, 75A, TO-220AB; Polarità Transistor:Canale N; Corrente Continua di Drain Id:75A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0027ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:300W; Modello Case Transistor:TO-220AB; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HEXFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Teil # Mfg. Beschreibung Aktie Preis
IRFB3256PBF
DISTI # 24580950		Infineon Technologies AGTrans MOSFET N-CH 60V 206A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		300
  • 200:$1.1186
  • 100:$1.1687
  • 50:$1.3050
IRFB3256PBF
DISTI # IRFB3256PBF-ND		Infineon Technologies AGMOSFET N CH 60V 75A TO-220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.6036
IRFB3256PBF
DISTI # IRFB3256PBF		Infineon Technologies AGTrans MOSFET N-CH 60V 206A 3-Pin TO-220AB Tube - Rail/Tube (Alt: IRFB3256PBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.1999
  • 2000:$1.1559
  • 4000:$1.1149
  • 6000:$1.0769
  • 10000:$1.0579
IRFB3256PBF
DISTI # SP001577830		Infineon Technologies AGTrans MOSFET N-CH 60V 206A 3-Pin TO-220AB Tube (Alt: SP001577830)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.3999
  • 10:€1.2719
  • 25:€1.1659
  • 50:€1.1199
  • 100:€1.0759
  • 500:€1.0369
  • 1000:€0.9999
IRFB3256PBF
DISTI # 34AC1741		Infineon Technologies AGMOSFET, N-CH, 60V, 75A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes795
  • 1:$2.7600
  • 10:$2.3500
  • 100:$2.0400
  • 500:$1.7300
  • 1000:$1.4600
IRFB3256PBF
DISTI # 70411658		Infineon Technologies AGTransistor MOSFET N-ch 60V 75A TO-220AB
RoHS: Compliant		0
  • 1:$2.8320
  • 10:$2.4990
  • 100:$2.1790
  • 500:$1.8880
  • 1000:$1.6660
IRFB3256PBFInternational RectifierPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
RoHS: Compliant		404
  • 1000:$1.3700
  • 500:$1.4400
  • 100:$1.5000
  • 25:$1.5600
  • 1:$1.6800
IRFB3256PBF
DISTI # 942-IRFB3256PBF		Infineon Technologies AGMOSFET MOSFET, 60V, 210A, 3 130 nC Qg, TO-220AB
RoHS: Compliant		254
  • 1:$2.7600
  • 10:$2.3500
  • 100:$2.0400
  • 250:$1.9300
  • 500:$1.7300
  • 1000:$1.4600
IRFB3256PBFInternational Rectifier 
RoHS: Compliant		Europe - 50
    IRFB3256PBF
    DISTI # IRFB3256PBF    		Infineon Technologies AGN-Ch 60V 75A 300W 0,0034R TO220AB
    RoHS: Compliant    		40
    • 10:€1.4000
    • 50:€1.1000
    • 200:€1.0000
    • 500:€0.9630
    IRFB3256PBF
    DISTI # 2781123    		Infineon Technologies AGMOSFET, N-CH, 60V, 75A, TO-220AB
    RoHS: Compliant    		795
    • 1:£2.9800
    • 10:£2.2500
    • 100:£1.9400
    IRFB3256PBF
    DISTI # 2781123    		Infineon Technologies AGMOSFET, N-CH, 60V, 75A, TO-220AB
    RoHS: Compliant    		835
    • 1:$3.2400
    • 10:$3.0300
    • 100:$2.6800
    • 250:$2.5300
    • 500:$2.4000
    • 1000:$2.2800
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von IRFB3256PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,59 $
    1,59 $
    10
    1,51 $
    15,08 $
    100
    1,43 $
    142,82 $
    500
    1,35 $
    674,40 $
    1000
    1,27 $
    1 269,50 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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