IRFH5020TRPBF

IRFH5020TRPBF
Mfr. #:
IRFH5020TRPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 200V 1 N-CH HEXFET 55mOhms 11nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFH5020TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFH5020TRPBF DatasheetIRFH5020TRPBF Datasheet (P4-P6)IRFH5020TRPBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PQFN-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
34 A
Rds On - Drain-Source-Widerstand:
55 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
11 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
3.6 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
0.83 mm
Länge:
6 mm
Transistortyp:
1 N-Channel
Breite:
5 mm
Marke:
Infineon / IR
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
7.7 ns
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
21 ns
Typische Einschaltverzögerungszeit:
9.3 ns
Teil # Aliase:
SP001575478
Tags
IRFH5020TRP, IRFH5020, IRFH502, IRFH50, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 200 V 55 mOhm 36 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ernational Rectifier
200V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***ied Electronics & Automation
MOSFET, N-Channel, 200V, 41A, 59 mOhm, 36 nC Qg, PQFN
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive
***ical
Trans MOSFET N-CH 200V 5.1A 8-Pin QFN EP T/R
*** Source Electronics
MOSFET N-CH 200V 5.1A 8VQFN
***i-Key
MOSFET N-CH 200V 5.1A 8PQFN
***rt123
PQFN (5 x 6 mm)
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:200V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 200V, 34A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:3.6W; Transistor Case Style:PQFN; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 200V, 34A, PQFN-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:34A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.047ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:5V; Dissipazione di Potenza Pd:3.6W; Modello Case Transistor:PQFN; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:HEXFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Teil # Mfg. Beschreibung Aktie Preis
IRFH5020TRPBF
DISTI # V72:2272_13890386
Infineon Technologies AGTrans MOSFET N-CH 200V 5.1A 8-Pin PQFN EP T/R
RoHS: Compliant
397
  • 75000:$0.7775
  • 30000:$0.7784
  • 15000:$0.7793
  • 6000:$0.7802
  • 3000:$0.9661
  • 1000:$0.9764
  • 500:$1.0028
  • 250:$1.1092
  • 100:$1.1124
  • 50:$1.3237
  • 25:$1.3291
  • 10:$1.3344
  • 1:$1.5109
IRFH5020TRPBF
DISTI # IRFH5020TRPBFCT-ND
Infineon Technologies AGMOSFET N-CH 200V 5.1A 8PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3325In Stock
  • 1000:$1.1675
  • 500:$1.3833
  • 100:$1.7431
  • 10:$2.1380
  • 1:$2.3500
IRFH5020TRPBF
DISTI # IRFH5020TRPBFDKR-ND
Infineon Technologies AGMOSFET N-CH 200V 5.1A 8PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3325In Stock
  • 1000:$1.1675
  • 500:$1.3833
  • 100:$1.7431
  • 10:$2.1380
  • 1:$2.3500
IRFH5020TRPBF
DISTI # IRFH5020TRPBFTR-ND
Infineon Technologies AGMOSFET N-CH 200V 5.1A 8PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 4000:$1.0636
IRFH5020TRPBF
DISTI # 29722686
Infineon Technologies AGTrans MOSFET N-CH 200V 5.1A 8-Pin PQFN EP T/R
RoHS: Compliant
397
  • 250:$1.1092
  • 100:$1.1124
  • 50:$1.3237
  • 25:$1.3291
  • 10:$1.3344
  • 9:$1.5109
IRFH5020TRPBF
DISTI # SP001575478
Infineon Technologies AGTrans MOSFET N-CH 200V 5.1A 8-Pin QFN EP T/R (Alt: SP001575478)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel
Europe - 8000
  • 4000:€1.0349
  • 8000:€0.8469
  • 16000:€0.7759
  • 24000:€0.7159
  • 40000:€0.6649
IRFH5020TRPBF
DISTI # IRFH5020TRPBF
Infineon Technologies AGTrans MOSFET N-CH 200V 5.1A 8-Pin QFN EP T/R - Tape and Reel (Alt: IRFH5020TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel
Americas - 0
  • 4000:$0.7309
  • 8000:$0.7049
  • 16000:$0.6799
  • 24000:$0.6569
  • 40000:$0.6449
IRFH5020TRPBF
DISTI # IRFH5020TRPBF
Infineon Technologies AGTrans MOSFET N-CH 200V 5.1A 8-Pin QFN EP T/R (Alt: IRFH5020TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel
Asia - 0
    IRFH5020TRPBF
    DISTI # 91Y4690
    Infineon Technologies AGMOSFET, N-CH, 200V, 34A, PQFN-8,Transistor Polarity:N Channel,Continuous Drain Current Id:34A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power DissipationRoHS Compliant: Yes3075
    • 1:$1.8700
    • 10:$1.5900
    • 25:$1.4800
    • 50:$1.3800
    • 100:$1.2700
    • 250:$1.2000
    • 500:$1.1200
    • 1000:$0.9210
    IRFH5020TRPBF
    DISTI # 942-IRFH5020TRPBF
    Infineon Technologies AGMOSFET 200V 1 N-CH HEXFET 55mOhms 11nC
    RoHS: Compliant
    3217
    • 1:$1.8700
    • 10:$1.5900
    • 100:$1.2700
    • 500:$1.1200
    • 1000:$0.9210
    • 4000:$0.8260
    • 8000:$0.7940
    IRFH5020TRPBFInternational Rectifier 43
      IRFH5020TRPBF
      DISTI # 2580002
      Infineon Technologies AGMOSFET, N-CH, 200V, 34A, PQFN-8
      RoHS: Compliant
      3075
      • 1:$2.9700
      • 10:$2.5200
      • 100:$2.0100
      • 500:$1.7800
      • 1000:$1.4600
      • 4000:$1.4300
      IRFH5020TRPBF
      DISTI # 2580002
      Infineon Technologies AGMOSFET, N-CH, 200V, 34A, PQFN-8
      RoHS: Compliant
      3075
      • 1:£1.8100
      • 10:£1.2500
      • 100:£0.9720
      • 250:£0.9180
      • 500:£0.8560
      IRFH5020TRPBF
      DISTI # C1S322000595190
      Infineon Technologies AGTrans MOSFET N-CH 200V 5.1A 8-Pin PQFN EP T/R
      RoHS: Compliant
      397
      • 100:$1.1124
      • 50:$1.3237
      • 25:$1.3291
      • 10:$1.3344
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1988
      Menge eingeben:
      Der aktuelle Preis von IRFH5020TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,86 $
      1,86 $
      10
      1,58 $
      15,80 $
      100
      1,27 $
      127,00 $
      500
      1,11 $
      555,00 $
      1000
      0,92 $
      921,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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