OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SI7802DN-T1-GE3

SI7802DN-T1-GE3
Mfr. #:
SI7802DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 250V 1.95A 3.8W 435mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI7802DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI7802DN-T1-GE3 DatasheetSI7802DN-T1-GE3 Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.04 mm
Länge:
3.3 mm
Serie:
SI7
Breite:
3.3 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SI7802DN-GE3
Gewichtseinheit:
0.005362 oz
Tags
SI7802DN-T, SI7802D, SI7802, SI780, SI78, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 250V 1.24A 8-Pin PowerPAK 1212 T/R
***
N-CHANNEL 250-V (D-S) MOSFET
***nell
MOSFET, N CH, 250V, 1.24A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:1.24A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.36ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-
Teil # Mfg. Beschreibung Aktie Preis
SI7802DN-T1-GE3
DISTI # SI7802DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 250V 1.24A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI7802DN-T1-GE3
    DISTI # SI7802DN-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 250V 1.24A 1212-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI7802DN-T1-GE3
      DISTI # SI7802DN-T1-GE3DKR-ND      		Vishay SiliconixMOSFET N-CH 250V 1.24A 1212-8
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI7802DN-T1-GE3
        DISTI # 69W7234        		Vishay IntertechnologiesMOSFET, N CHANNEL, 250V, 1.24A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:1.24A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.36ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.4VRoHS Compliant: Yes0
          SI7802DN-T1-GE3
          DISTI # 781-SI7802DN-T1-GE3          		Vishay IntertechnologiesMOSFET 250V 1.95A 3.8W 435mohm @ 10V
          RoHS: Compliant          		0
            Bild Teil # Beschreibung
            SI7802DN-T1-GE3

            Mfr.#: SI7802DN-T1-GE3

            OMO.#: OMO-SI7802DN-T1-GE3

            		 MOSFET 250V 1.95A 3.8W 435mohm @ 10V
            SI7802DN-T1-GE3

            Mfr.#: SI7802DN-T1-GE3

            OMO.#: OMO-SI7802DN-T1-GE3-VISHAY

            		 IGBT Transistors MOSFET 250V 1.95A 3.8W 435mohm @ 10V
            SI7802DN

            Mfr.#: SI7802DN

            OMO.#: OMO-SI7802DN-1190

            		 Neu und Original
            SI7802DN-T1-E3

            Mfr.#: SI7802DN-T1-E3

            OMO.#: OMO-SI7802DN-T1-E3-VISHAY

            		 MOSFET N-CH 250V 1.24A 1212-8
            SI7802DN-T1-GE3CT

            Mfr.#: SI7802DN-T1-GE3CT

            OMO.#: OMO-SI7802DN-T1-GE3CT-1190

            		 Neu und Original
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            3500
            Menge eingeben:
            Der aktuelle Preis von SI7802DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
            Beginnen mit
            Neueste Produkte
            • -12 V and -20 V P-Channel Gen III MOSFETs
              -12 V and -20 V P-Channel Gen III MOSFETs
              Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
            • Compare SI7802DN-T1-GE3
              Compare SI7802DN-T1-GE3
              SI7802DNT1E3 vs SI7802DNT1GE3 vs SI7802DNT1GE3CT
            • DG2788A Dual DPDT / Quad SPDT Analog Switch
              DG2788A Dual DPDT / Quad SPDT Analog Switch
              Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
            • Smart Load Switches
              Smart Load Switches
              Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
            • SUM70101EL 100 V P-Channel MOSFET
              SUM70101EL 100 V P-Channel MOSFET
              Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
            • DGQ2788A AEC-Q100 Qualified Analog Switch
              DGQ2788A AEC-Q100 Qualified Analog Switch
              The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
            More Newest Products
            Top