SISS10ADN-T1-GE3

Mfr. #:: SISS10ADN-T1-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 40V Vds; 20/-16V Vgs PowerPAK 1212-8S
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SISS10ADN-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: SISS10ADN-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PowerPAK-1212-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 40 V

Id - Kontinuierlicher Drainstrom:: 31.7 A

Rds On - Drain-Source-Widerstand:: 2.65 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1.1 V

Vgs - Gate-Source-Spannung:: 20 V, - 16 V

Qg - Gate-Ladung:: 61 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 56.8 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Transistortyp:: 1 N-Channel

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 80 S

Abfallzeit:: 5 ns

Produktart:: MOSFET

Anstiegszeit:: 5 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 30 ns

Typische Einschaltverzögerungszeit:: 13 ns

Tags: SISS10, SISS1, SISS, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SISS10ADN-T1-GE3 Mehr Informationen

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SISS10ADN-T1-GE3 DISTI # V99:2348_22831169	Vishay Intertechnologies	SISS10ADN-T1-GE3	0
SISS10ADN-T1-GE3 DISTI # SISS10ADN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CHAN 40 V POWERPAK 1212 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	15000:$0.2327 6000:$0.2356 3000:$0.2530
SISS10ADN-T1-GE3 DISTI # SISS10ADN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CHAN 40 V POWERPAK 1212 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.2876 500:$0.3595 100:$0.4548 10:$0.5930 1:$0.6700
SISS10ADN-T1-GE3 DISTI # SISS10ADN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CHAN 40 V POWERPAK 1212 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.2876 500:$0.3595 100:$0.4548 10:$0.5930 1:$0.6700
SISS10ADN-T1-GE3 DISTI # 99AC9589	Vishay Intertechnologies	MOSFET, N-CH, 40V, 109A, 150DEG C, 56.8W,Transistor Polarity:N Channel,Continuous Drain Current Id:109A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.4V,PowerRoHS Compliant: Yes	0	1000:$0.2690 500:$0.3360 250:$0.3720 100:$0.4070 50:$0.4500 25:$0.4930 10:$0.5360 1:$0.6670
SISS10ADN-T1-GE3 DISTI # 78-SISS10ADN-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds,20/-16V Vgs PowerPAK 1212-8S RoHS: Compliant	0	1:$0.6600 10:$0.5310 100:$0.4030 500:$0.3330 1000:$0.2660 3000:$0.2410 6000:$0.2250 9000:$0.2170 24000:$0.2080
SISS10ADN-T1-GE3 DISTI # 3019139	Vishay Intertechnologies	MOSFET, N-CH, 40V, 109A, 150DEG C, 56.8W	0	500:£0.2430 250:£0.2700 100:£0.2960 25:£0.4080 5:£0.4390
SISS10ADN-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds,20/-16V Vgs PowerPAK 1212-8S	Americas -
SISS10ADN-T1-GE3 DISTI # 3019139	Vishay Intertechnologies	MOSFET, N-CH, 40V, 109A, 150DEG C, 56.8W RoHS: Compliant	0	1000:$0.3070 500:$0.3880 250:$0.4340 100:$0.4780 25:$0.6440 5:$0.7050

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	Mfr.#: ESP32-WROOM-32U OMO.#: OMO-ESP32-WROOM-32U-ESPRESSIF-SYSTEMS	WIFI MODULE 32MBITS SPI FLASH
	Mfr.#: DRV5011ADDMRR OMO.#: OMO-DRV5011ADDMRR-TEXAS-INSTRUMENTS	Hall Effect Sensor 30mA Latch 3.3V/5V T/R
	Mfr.#: FDMS030N06B OMO.#: OMO-FDMS030N06B-ON-SEMICONDUCTOR	MOSFET N-CH 60V 22.1A POWER56

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3000
Menge eingeben:

Der aktuelle Preis von SISS10ADN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,66 $~~; ~~0,66 $~~

10: ~~0,53 $~~; ~~5,31 $~~

100: ~~0,40 $~~; ~~40,30 $~~

500: ~~0,33 $~~; ~~166,50 $~~

1000: ~~0,27 $~~; ~~266,00 $~~

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SISS10 4
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SISS 45
SIS 843

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SISS10ADN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes