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CSD87312Q3E

CSD87312Q3E
Mfr. #:
CSD87312Q3E
Beschreibung:
MOSFET Dual 30V N-CH NexFET Pwr MOSFETs
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CSD87312Q3E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CSD87312Q3E Mehr Informationen CSD87312Q3E Product Details
Produkteigenschaft
Attributwert
Hersteller:
Texas Instruments
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
VSON-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
27 A
Rds On - Drain-Source-Widerstand:
33 mOhms
Vgs th - Gate-Source-Schwellenspannung:
800 mV
Vgs - Gate-Source-Spannung:
8 V
Qg - Gate-Ladung:
6.3 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
NexFET
Verpackung:
Spule
Höhe:
1 mm
Länge:
3.3 mm
Serie:
CSD87312Q3E
Transistortyp:
2 N-Channel
Breite:
3.3 mm
Marke:
Texas Instruments
Vorwärtstranskonduktanz - Min:
39 S
Abfallzeit:
2.9 ns
Produktart:
MOSFET
Anstiegszeit:
16 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
17 ns
Typische Einschaltverzögerungszeit:
7.8 ns
Gewichtseinheit:
0.001101 oz
Tags
CSD8731, CSD873, CSD87, CSD8, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
30V, N ch NexFET MOSFET™, dual common source SON3x3, 38mOhm 8-VSON-CLIP -55 to 150
***p One Stop Global
Trans MOSFET N-CH 30V 27A 8-Pin VSON EP T/R
***Components
MOSFET Dual N-Ch 30V 27A NexFET VSON8EP
***ark
30V Powerblock N ch MOSFET
***i-Key
MOSFET 2N-CH 30V 27A 8VSON
***ical
High Frequency Synchronous Power Module
***INS
The CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection. This SON 3.3 x 3.3mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Teil # Beschreibung Aktie Preis
CSD87312Q3E
DISTI # 296-35526-1-ND		MOSFET 2N-CH 30V 27A 8VSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2270In Stock
  • 1000:$0.5234
  • 500:$0.6630
  • 100:$0.8550
  • 10:$1.0820
  • 1:$1.2200
CSD87312Q3E
DISTI # 296-35526-6-ND		MOSFET 2N-CH 30V 27A 8VSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2270In Stock
  • 1000:$0.5234
  • 500:$0.6630
  • 100:$0.8550
  • 10:$1.0820
  • 1:$1.2200
CSD87312Q3E
DISTI # 296-35526-2-ND		MOSFET 2N-CH 30V 27A 8VSON
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 5000:$0.4506
  • 2500:$0.4743
CSD87312Q3E
DISTI # CSD87312Q3E		Trans MOSFET N-CH 30V 27A 8-Pin VSON EP T/R (Alt: CSD87312Q3E)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    CSD87312Q3E
    DISTI # CSD87312Q3E    		Trans MOSFET N-CH 30V 27A 8-Pin VSON EP T/R - Tape and Reel (Alt: CSD87312Q3E)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.4469
    • 5000:$0.4249
    • 10000:$0.4109
    • 15000:$0.3969
    • 25000:$0.3859
    CSD87312Q3EDual 30-V N-Channel NexFET Power MOSFETs7050
    • 1000:$0.3500
    • 750:$0.3900
    • 500:$0.4900
    • 250:$0.6000
    • 100:$0.6500
    • 25:$0.7600
    • 10:$0.8200
    • 1:$0.9200
    CSD87312Q3E
    DISTI # 595-CSD87312Q3E    		MOSFET Dual 30V N-CH NexFET Pwr MOSFETs
    RoHS: Compliant    		737
    • 1:$1.0100
    • 10:$0.8600
    • 100:$0.6630
    • 500:$0.5860
    • 1000:$0.4620
    • 2500:$0.4100
    CSD87312Q3EPower Field-Effect Transistor, 27A I(D), 30V, 0.038ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		7560
    • 1000:$0.4100
    • 500:$0.4300
    • 100:$0.4500
    • 25:$0.4700
    • 1:$0.5000
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1986
    Menge eingeben:
    Der aktuelle Preis von CSD87312Q3E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,01 $
    1,01 $
    10
    0,86 $
    8,60 $
    100
    0,66 $
    66,30 $
    500
    0,59 $
    293,00 $
    1000
    0,46 $
    462,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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