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IRFB7540PBF

IRFB7540PBF
Mfr. #:
IRFB7540PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFET N CH 60V 110A TO-220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFB7540PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRFB7540PBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
110 A
Rds On - Drain-Source-Widerstand:
4.2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.7 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
88 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
160 W
Aufbau:
Single
Handelsname:
StarkIRFET
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
110 S
Abfallzeit:
56 ns
Produktart:
MOSFET
Anstiegszeit:
76 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
58 ns
Typische Einschaltverzögerungszeit:
12 ns
Teil # Aliase:
SP001563988
Gewichtseinheit:
0.211644 oz
Tags
IRFB754, IRFB75, IRFB7, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 60 V 5.1 mOhm 88 nC HEXFET® Power Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 60V 110A 3-Pin TO-220AB Tube - Rail/Tube
***et
MOSFET, 60V, 110A, 5.1 MOHM, 88 NC QG, TO-220AB
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 160 W
*** Stop Electro
Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.0042Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Msl:- Rohs Compliant: Yes
***eco
MOSFET Transistor N-Channel 60 V 95A (Tc) 125W (Tc) Through Hole TO-220
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 60 V 5.9 mOhm 75 nC HEXFET® Power Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 60V 95A 3-Pin TO-220AB Tube - Rail/Tube
***et
MOSFET, 60V, 95A, 5.9 MOHM, 75 NC QG, TO-220AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***ineon SCT
60V, N-Ch, 7.1 mΩ max, Automotive MOSFET, TO-220, OptiMOS™-T2, PG-TO220-3, RoHS
***ical
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-220 Tube
*** Stop Electro
Power Field-Effect Transistor, 80A I(D), 60V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***ure Electronics
STP80N6F6: 60 V 5 mOhm 80 A N-Channel STripFET™ VI DeepGATE™ Power MOSFET-TO-220
***ical
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
N-channel 60 V, 0.0057 Ohm typ., 90 A STripFET F6 Power MOSFET in a TO-220 package
***ure Electronics
Single N-Channel 60 V 136 W 74.9 nC Silicon Through Hole Mosfet - TO-220-3
***r Electronics
Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***et
Trans MOSFET N-CH 60V 120A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 60V 120A PG-TO220-3
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***et
Transistor MOSFET N-Channel 60V 120A 3-Pin TO-220AB
***el Electronic
TRIAC SENS GATE 800V 8A TO220AB
***peria
N-channel TrenchMOS standard level FET
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Infineon Automatic Opening Systems
Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Teil # Mfg. Beschreibung Aktie Preis
IRFB7540PBF
DISTI # V99:2348_13890771		Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		45
  • 10000:$0.4935
  • 2500:$0.5484
  • 1000:$0.6092
  • 500:$0.7826
  • 100:$0.8312
  • 10:$1.0294
  • 1:$1.1685
IRFB7540PBF
DISTI # IRFB7540PBF-ND		Infineon Technologies AGMOSFET N CH 60V 110A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		3000In Stock
  • 1000:$0.8648
  • 500:$1.0716
  • 100:$1.3560
  • 10:$1.6920
  • 1:$1.9000
IRFB7540PBF
DISTI # 21006250		Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1155
  • 1250:$0.4944
  • 500:$0.5088
  • 250:$0.5328
  • 100:$0.5472
  • 50:$0.7056
IRFB7540PBF
DISTI # 30228375		Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		45
  • 13:$1.0294
IRFB7540PBF
DISTI # SP001563988		Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin TO-220AB Tube (Alt: SP001563988)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 3850
  • 1:€0.7899
  • 10:€0.7019
  • 25:€0.6319
  • 50:€0.5739
  • 100:€0.5259
  • 500:€0.4859
  • 1000:€0.4509
IRFB7540PBF
DISTI # IRFB7540PBF		Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin TO-220AB Tube - Rail/Tube (Alt: IRFB7540PBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.5409
  • 2000:$0.5219
  • 4000:$0.5029
  • 6000:$0.4859
  • 10000:$0.4769
IRFB7540PBF.
DISTI # 29AC7042		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:110A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.7V,Power Dissipation Pd:160W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 1:$1.5500
  • 10:$1.3200
  • 100:$1.0200
  • 500:$0.8940
  • 1000:$0.7050
  • 5000:$0.6260
  • 10000:$0.6020
IRFB7540PBFInfineon Technologies AGSingle N-Channel 60 V 5.1 mOhm 88 nC HEXFET Power Mosfet - TO-220-3
RoHS: Compliant		50Tube
  • 50:$0.8950
  • 100:$0.7450
  • 250:$0.7150
  • 500:$0.6950
  • 1250:$0.6700
IRFB7540PBF
DISTI # 942-IRFB7540PBF		Infineon Technologies AGMOSFET MOSFET N CH 60V 110A TO-220AB
RoHS: Compliant		1994
  • 1:$1.5500
  • 10:$1.3200
  • 100:$1.0200
  • 500:$0.8940
  • 1000:$0.7050
IRFB7540PBF
DISTI # 8208849P		Infineon Technologies AGMOSFET 60V 110A STRONGIRFET TO220AB, TU2400
  • 15:£1.0540
  • 50:£0.9980
  • 150:£0.7800
  • 800:£0.6940
IRFB7540PBF
DISTI # IRFB7540PBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,80A,160W,TO220AB145
  • 1:$1.0400
  • 3:$0.9200
  • 10:$0.7700
  • 50:$0.6800
IRFB7540PBFInternational Rectifier 
RoHS: Compliant		Europe - 600
    IRFB7540PBF
    DISTI # IRFB7540PBF    		Infineon Technologies AGN-Ch 60V 110A 160W 0,0051R TO220AB
    RoHS: Compliant    		100
    • 10:€0.8840
    • 50:€0.5840
    • 200:€0.4840
    • 500:€0.4660
    IRFB7540PBF
    DISTI # C1S327401067280    		Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		1000
    • 1000:$0.6850
    • 200:$0.7520
    • 100:$0.8530
    • 50:$1.0000
    • 10:$1.2300
    • 1:$2.4100
    IRFB7540PBF
    DISTI # C1S322000489190    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		45
    • 10:$1.0294
    IRFB7540PBF
    DISTI # 2406517    		Infineon Technologies AGMOSFET, N CH, 60V, 110A, TO-220AB-3
    RoHS: Compliant    		0
    • 1:$2.4600
    • 10:$2.0900
    • 100:$1.6200
    • 500:$1.4200
    • 1000:$1.1200
    • 2000:$0.9910
    • 10000:$0.9690
    IRFB7540PBF
    DISTI # 2406517    		Infineon Technologies AGMOSFET, N CH, 60V, 110A, TO-220AB-3
    RoHS: Compliant    		0
    • 5:£1.0600
    • 25:£0.9820
    • 100:£0.7800
    • 250:£0.7320
    • 500:£0.6830
    IRFB7540PBF
    DISTI # XSKDRABS0006803    		Infineon Technologies AG 
    RoHS: Compliant    		2160
    • 1000:$0.8721
    • 2160:$0.8140
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    OMO.#: OMO-DMP6350S-7

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    		 Development Boards & Kits - TMS320 F280049C CONTROL CARD
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von IRFB7540PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,46 $
    1,46 $
    10
    1,25 $
    12,50 $
    100
    0,96 $
    96,00 $
    500
    0,85 $
    424,00 $
    1000
    0,67 $
    669,00 $
    2000
    0,64 $
    1 276,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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