SI1012XT1GE3

SI1012XT1GE3
Mfr. #:
SI1012XT1GE3
Hersteller:
Vishay Intertechnologies
Beschreibung:
Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI1012XT1GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SI1012X, SI1012, SI101, SI10, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
SI1012X-T1-GE3
DISTI # V72:2272_09215334
Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R
RoHS: Compliant
994
  • 500:$0.2064
  • 250:$0.2641
  • 100:$0.2717
  • 10:$0.4198
  • 1:$0.5414
SI1012X-T1-GE3
DISTI # V36:1790_09215334
Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R
RoHS: Compliant
0
  • 3000:$0.1500
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 20V 500MA SC89-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
51552In Stock
  • 1000:$0.1557
  • 500:$0.2076
  • 100:$0.2769
  • 10:$0.4070
  • 1:$0.5000
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 20V 500MA SC89-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
51552In Stock
  • 1000:$0.1557
  • 500:$0.2076
  • 100:$0.2769
  • 10:$0.4070
  • 1:$0.5000
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 20V 500MA SC89-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
48000In Stock
  • 75000:$0.1075
  • 30000:$0.1117
  • 15000:$0.1218
  • 6000:$0.1302
  • 3000:$0.1386
SI1012X-T1-GE3
DISTI # 25789785
Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R
RoHS: Compliant
994
  • 42:$0.5414
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R (Alt: SI1012X-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.1299
  • 18000:€0.1389
  • 12000:€0.1509
  • 6000:€0.1749
  • 3000:€0.2569
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R (Alt: SI1012X-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SI1012X-T1-GE3
    DISTI # SI1012X-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R - Tape and Reel (Alt: SI1012X-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$0.1209
    • 18000:$0.1239
    • 12000:$0.1269
    • 6000:$0.1329
    • 3000:$0.1369
    SI1012X-T1-GE3.
    DISTI # 26AC3307
    Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:500mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:900mV,Power Dissipation Pd:250mW,No. of Pins:3Pins RoHS Compliant: No0
    • 30000:$0.1240
    • 18000:$0.1280
    • 12000:$0.1310
    • 6000:$0.1370
    • 1:$0.1410
    SI1012X-T1-GE3
    DISTI # 16P3669
    Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 500mA, SC-89,Transistor Polarity:N Channel,Continuous Drain Current Id:600mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.7ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:900mV RoHS Compliant: Yes0
    • 1000:$0.1840
    • 500:$0.2370
    • 250:$0.2630
    • 100:$0.2890
    • 50:$0.3390
    • 25:$0.3900
    • 1:$0.5050
    SI1012X-T1-GE3
    DISTI # 70026402
    Vishay SiliconixMOSFET,Power,N-Ch,VDSS 20V,RDS(ON) 0.41Ohm,ID 500mA,SC-89 (SOT-490),Halogeenfree
    RoHS: Compliant
    0
    • 3000:$0.2200
    • 6000:$0.2030
    • 12000:$0.1950
    SI1012X-T1-GE3
    DISTI # 781-SI1012X-T1-GE3
    Vishay IntertechnologiesMOSFET 20V 0.6A 175mW 700mohm @ 4.5V
    RoHS: Compliant
    3158
    • 1:$0.5000
    • 10:$0.3860
    • 100:$0.2860
    • 500:$0.2350
    • 1000:$0.1820
    • 3000:$0.1660
    • 6000:$0.1550
    • 9000:$0.1450
    • 24000:$0.1370
    SI1012XT1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 0.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    3000
      SI1012X-T1-GE3Vishay IntertechnologiesMOSFET 20V 0.6A 175mW 700mohm @ 4.5V
      RoHS: Compliant
      Americas - 6000
        SI1012X-T1-GE3
        DISTI # 1690182
        Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 500mA, SC-89
        RoHS: Compliant
        0
        • 1000:$0.2350
        • 500:$0.3130
        • 20:$0.4180
        Bild Teil # Beschreibung
        SI1012R-T1-GE3

        Mfr.#: SI1012R-T1-GE3

        OMO.#: OMO-SI1012R-T1-GE3

        MOSFET 20V 0.6A 175mW 700mohm @ 4.5V
        SI1012CR-T1-GE3

        Mfr.#: SI1012CR-T1-GE3

        OMO.#: OMO-SI1012CR-T1-GE3

        MOSFET 20V Vds 8V Vgs SC75A
        SI1012-A-GM

        Mfr.#: SI1012-A-GM

        OMO.#: OMO-SI1012-A-GM-SILICON-LABS

        IC RF TXRX+MCU ISM<1GHZ 42WFQFN
        SI1012-TP

        Mfr.#: SI1012-TP

        OMO.#: OMO-SI1012-TP-MICRO-COMMERCIAL-COMPONENTS

        N-CHANNEL MOSFET, SOT-523 PACKAG
        SI1012CR-T1-GE3

        Mfr.#: SI1012CR-T1-GE3

        OMO.#: OMO-SI1012CR-T1-GE3-VISHAY

        MOSFET N-CH 20V 0.63A SC-75A
        SI1012R-S6-GE3

        Mfr.#: SI1012R-S6-GE3

        OMO.#: OMO-SI1012R-S6-GE3-1190

        Neu und Original
        SI1012R-T1-E3 , MAX6840XSD0

        Mfr.#: SI1012R-T1-E3 , MAX6840XSD0

        OMO.#: OMO-SI1012R-T1-E3-MAX6840XSD0-1190

        Neu und Original
        SI1012R-T1-E3 SI1012R-T1

        Mfr.#: SI1012R-T1-E3 SI1012R-T1

        OMO.#: OMO-SI1012R-T1-E3-SI1012R-T1-1190

        Neu und Original
        SI1012R-T1-GE3-CUT TAPE

        Mfr.#: SI1012R-T1-GE3-CUT TAPE

        OMO.#: OMO-SI1012R-T1-GE3-CUT-TAPE-1190

        Neu und Original
        SI1012-C-GM2

        Mfr.#: SI1012-C-GM2

        OMO.#: OMO-SI1012-C-GM2-SILICON-LABS

        Microcontrollers - MCU RF Microcontrollers - MCU 16kB, 768B RAM +13 dBm
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5000
        Menge eingeben:
        Der aktuelle Preis von SI1012XT1GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
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        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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