NDC651N

NDC651N
Mfr. #:
NDC651N
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET N-Ch LL FET Enhancement Mode
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NDC651N Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NDC651N DatasheetNDC651N Datasheet (P4-P6)NDC651N Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SSOT-6
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
3.2 A
Rds On - Drain-Source-Widerstand:
38 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.6 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
2.9 mm
Produkt:
MOSFET Kleinsignal
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
1.6 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
19 ns
Produktart:
MOSFET
Anstiegszeit:
19 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
15 ns
Typische Einschaltverzögerungszeit:
9 ns
Teil # Aliase:
NDC651N_NL
Gewichtseinheit:
0.000557 oz
Tags
NDC651, NDC65, NDC6, NDC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 3.2A 6-Pin SuperSOT T/R
***i-Key
MOSFET N-CH 30V 3.2A SSOT6
***ser
MOSFETs N-Ch LL FET Enhancement Mode
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:3.2A; On Resistance, Rds(on):0.06ohm; Drain-Source Breakdown Voltage:30V; Gate-Source Voltage:6V; Leaded Process Compatible:No RoHS Compliant: No
***inecomponents.com
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Teil # Mfg. Beschreibung Aktie Preis
NDC651N
DISTI # NDC651NTR-ND
ON SemiconductorMOSFET N-CH 30V 3.2A SSOT6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    NDC651N
    DISTI # NDC651NCT-ND
    ON SemiconductorMOSFET N-CH 30V 3.2A SSOT6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      NDC651N
      DISTI # NDC651NDKR-ND
      ON SemiconductorMOSFET N-CH 30V 3.2A SSOT6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        NDC651N
        DISTI # 512-NDC651N
        ON SemiconductorMOSFET N-Ch LL FET Enhancement Mode
        RoHS: Compliant
        0
          NDC651N_Q
          DISTI # 512-NDC651N_Q
          ON SemiconductorMOSFET N-Ch LL FET Enhancement Mode
          RoHS: Not compliant
          0
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                Verfügbarkeit
                Aktie:
                Available
                Auf Bestellung:
                1000
                Menge eingeben:
                Der aktuelle Preis von NDC651N dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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