2N4392-E3

2N4392-E3
Mfr. #:
2N4392-E3
Hersteller:
Vishay Semiconductors
Beschreibung:
JFET 55V 5pA
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2N4392-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2N4392-E3 Datasheet2N4392-E3 Datasheet (P4-P6)2N4392-E3 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
JFET
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-18
Polarität des Transistors:
N-Kanal
Aufbau:
Single
Vds - Drain-Source-Durchbruchspannung:
0.4 V
Vgs - Gate-Source-Durchbruchspannung:
- 40 V
Drain-Source-Strom bei Vgs=0:
25 mA to 75 mA
Rds On - Drain-Source-Widerstand:
60 Ohms
Pd - Verlustleistung:
1800 mW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 200 C
Verpackung:
Schüttgut
Typ:
JFET
Marke:
Vishay Semiconductors
Vorwärtstranskonduktanz - Min:
6 mS
Gate-Source-Abschaltspannung:
- 2 V to - 5 V
Maximale Drain-Gate-Spannung:
- 40 V
Werkspackungsmenge:
200
Gewichtseinheit:
0.013051 oz
Tags
2N4392, 2N439, 2N43, 2N4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
2N4392 Series -55 V 150 mA Through Hole N-Channel JFETs - TO-206AA(TO-18)
***ark
Transistors - JFET; Transistor Polarity:N Channel; Package/Case:TO-206AA; Continuous Drain Current, Id:25mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-5V; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
***ment14 APAC
TRANSISTOR, JFET, N, 40V, 25MA; Transistor Type:JFET; Breakdown Voltage Vbr:-55V; Zero Gate Voltage Drain Current Idss:25mA to 75mA; Gate-Source Cutoff Voltage Vgs(off) Max:-5V; Power Dissipation Pd:1.8W; Operating Temperature Range:-55°C to +200°C; Transistor Case Style:TO-218X; No. of Pins:3; Package / Case:TO-218X; Termination Type:Through Hole; Transistor Polarity:N Channel
Teil # Mfg. Beschreibung Aktie Preis
2N4392-E3
DISTI # 2N4392-E3-ND
Vishay SiliconixMOSFET N-CH 40V .1NA TO-18
RoHS: Compliant
Min Qty: 200
Container: Bulk
Limited Supply - Call
    2N4392-E3
    DISTI # 06J8866
    Vishay IntertechnologiesN CHANNEL JFET, -55V, TO-206AA,Breakdown Voltage Vbr:-55V,Zero Gate Voltage Drain Current Idss Min:25mA,Zero Gate Voltage Drain Current Idss Max:75mA,Gate-Source Cutoff Voltage Vgs(off) Max:-5V,Transistor Type:JFET,MSL:- RoHS Compliant: Yes0
      2N4392-E3
      DISTI # 781-2N4392-E3
      Vishay IntertechnologiesJFET 55V 5pA
      RoHS: Compliant
      0
        2N4392-E3
        DISTI # 1612625
        Vishay IntertechnologiesTRANSISTOR, JFET, N, 40V, 25MA
        RoHS: Compliant
        0
        • 1000:$5.6400
        • 500:$6.2400
        • 100:$6.6700
        • 50:$6.9800
        • 10:$7.9300
        • 1:$9.1700
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        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1000
        Menge eingeben:
        Der aktuelle Preis von 2N4392-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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