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MMDF1N05ER2G

MMDF1N05ER2G
Mfr. #:
MMDF1N05ER2G
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET NFET SO8D 50V 200mA 300mOhm
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MMDF1N05ER2G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MMDF1N05ER2G DatasheetMMDF1N05ER2G Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOIC-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
50 V
Id - Kontinuierlicher Drainstrom:
2 A
Rds On - Drain-Source-Widerstand:
300 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
12.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.5 mm
Länge:
5 mm
Serie:
MMDF1N05E
Transistortyp:
2 N-Channel
Typ:
MOSFET
Breite:
4 mm
Marke:
ON Semiconductor
Vorwärtstranskonduktanz - Min:
1.5 S
Abfallzeit:
25 ns
Produktart:
MOSFET
Anstiegszeit:
30 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
40 ns
Typische Einschaltverzögerungszeit:
20 ns
Gewichtseinheit:
0.006596 oz
Tags
MMDF1N05ER2, MMDF1N05ER, MMDF1N, MMDF1, MMDF, MMD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET 50V 2A 300 mOhm Dual N-Channel SO-8
***ical
Trans MOSFET N-CH 50V 2A 8-Pin SOIC N T/R
***ark
Dual N Channel Mosfet, 50V, Soic; Channel Type:n Channel; Drain Source Voltage Vds N Channel:50V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:2A; Continuous Drain Current Id P Channel:- Rohs Compliant: Yes
***nell
MOSFET, NN; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 2A; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel: 2A; Current Id Max: 2A; Drain Source Voltage Vds, N Channel: 50V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.3ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 50V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: 10V
***th Star Micro
These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage high speed switching applications where power efficiency is important. Typical applications are dc-dc converters and power management in portable and battery powered products such as computers printers cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
Teil # Mfg. Beschreibung Aktie Preis
MMDF1N05ER2G
DISTI # MMDF1N05ER2GOSTR-ND		ON SemiconductorMOSFET 2N-CH 50V 2A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    MMDF1N05ER2G
    DISTI # MMDF1N05ER2GOSCT-ND    		ON SemiconductorMOSFET 2N-CH 50V 2A 8SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      MMDF1N05ER2G
      DISTI # MMDF1N05ER2GOSDKR-ND      		ON SemiconductorMOSFET 2N-CH 50V 2A 8SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        MMDF1N05ER2G
        DISTI # MMDF1N05ER2G        		ON SemiconductorTrans MOSFET N-CH 50V 2A 8-Pin SOIC N T/R - Bulk (Alt: MMDF1N05ER2G)
        Min Qty: 521
        Container: Bulk        		Americas - 0
          MMDF1N05ER2G
          DISTI # 83K8580          		ON SemiconductorDUAL N CHANNEL MOSFET, 50V, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:50V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Product Range:-RoHS Compliant: Yes0
          • 1000:$0.7010
          • 500:$0.7310
          • 250:$0.8410
          • 100:$0.9500
          • 50:$1.1300
          • 25:$1.2500
          • 10:$1.3900
          • 1:$1.6200
          MMDF1N05ER2G
          DISTI # 863-MMDF1N05ER2G          		ON SemiconductorMOSFET NFET SO8D 50V 200mA 300mOhm
          RoHS: Compliant          		0
            MMDF1N05ER2
            DISTI # 863-MMDF1N05ER2            		ON SemiconductorMOSFET 50V 1A N-Channel
            RoHS: Not compliant            		0
              MMDF1N05ER2G
              DISTI # 1611473              		ON SemiconductorMOSFET, NN
              RoHS: Compliant              		0
              • 10000:$0.8810
              • 5000:$0.9080
              • 2500:$0.9980
              • 1000:$1.0900
              • 500:$1.5000
              • 100:$1.7100
              • 10:$2.0600
              • 1:$2.5000
              Bild Teil # Beschreibung
              MMDF1N05ER2

              Mfr.#: MMDF1N05ER2

              OMO.#: OMO-MMDF1N05ER2

              		 MOSFET 50V 1A N-Channel
              MMDF1N05ER2G

              Mfr.#: MMDF1N05ER2G

              OMO.#: OMO-MMDF1N05ER2G

              		 MOSFET NFET SO8D 50V 200mA 300mOhm
              MMDF1N05E

              Mfr.#: MMDF1N05E

              OMO.#: OMO-MMDF1N05E-1190

              		 MOSFET Transistor, Matched Pair, N-Channel, SO
              MMDF1N05ER

              Mfr.#: MMDF1N05ER

              OMO.#: OMO-MMDF1N05ER-1190

              		 Neu und Original
              MMDF1N05ER1

              Mfr.#: MMDF1N05ER1

              OMO.#: OMO-MMDF1N05ER1-1190

              		 Neu und Original
              MMDF1N05ER2

              Mfr.#: MMDF1N05ER2

              OMO.#: OMO-MMDF1N05ER2-ON-SEMICONDUCTOR

              		 MOSFET 2N-CH 50V 2A 8-SOIC
              MMDF1N05ER2/F1N05

              Mfr.#: MMDF1N05ER2/F1N05

              OMO.#: OMO-MMDF1N05ER2-F1N05-1190

              		 Neu und Original
              MMDF1N05ER2G

              Mfr.#: MMDF1N05ER2G

              OMO.#: OMO-MMDF1N05ER2G-ON-SEMICONDUCTOR

              		 MOSFET 2N-CH 50V 2A 8SOIC
              Verfügbarkeit
              Aktie:
              Available
              Auf Bestellung:
              5000
              Menge eingeben:
              Der aktuelle Preis von MMDF1N05ER2G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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