NTD6600N-1G

Mfr. #:: NTD6600N-1G
Hersteller:: ON Semiconductor
Beschreibung:: MOSFET N-CH 100V 12A IPAK
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: NTD6600N-1G Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NTD6600N-1G Datasheet NTD6600N-1G Datasheet (P4-P6)
ECAD Model:

Produkteigenschaft
Attributwert

Tags: NTD6600N, NTD66, NTD6, NTD

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTD6600N-1G Beschreibung

***r Electronics: Power Field-Effect Transistor, 12A I(D), 100V, 0.146ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***i-Key: MOSFET N-CH 100V 12A IPAK

*** Electronics: N-CHANNEL POWER MOSFET

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;I-Pak (TO-251AA);PD 48W

***ure Electronics: Single N-Channel 100 V 0.265 Ohm 20 nC HEXFET® Power Mosfet - TO-251AA

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***trelec: MOSFET Operating temperature: -55...175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 48 W

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ment14 APAC: MOSFET, N, 100V, 11A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):185mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:10A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; On State resistance @ Vgs = 10V:185mohm; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:35A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

***(Formerly Allied Electronics): MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;I-Pak (TO-251AA);PD 66W

***ineon SCT: -100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***ure Electronics: Single P-Channel 100 V 205 mOhm 58 nC HEXFET® Power Mosfet - IPAK

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):205mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes

***nell: MOSFET, P, I-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.205ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 66W; Transistor Case Style: TO-251AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Alternate Case Style: TO-251; Current Id Max: -13A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Length: 9.65mm; Lead Spacing: 2.28mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 52A; SMD Marking: IRFU5410PBF; Termination Type: Through Hole; Turn Off Time: 45ns; Turn On Time: 15ns; Voltage Vds Typ: -100V; Voltage Vgs Max: -4V; Voltage Vgs Rds on Measurement: -10V

***emi: Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, IPAK

***ark: MOSFET Transistor, N Channel, 10 A, 100 V, 0.142 ohm, 10 V, 2 V

***r Electronics: Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***nell: MOSFET, N CH, 100V, 10A, TO-251AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.142ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V;

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***ure Electronics: Single N-Channel 100 V 115 mOhm 29.3 nC HEXFET® Power Mosfet - IPAK

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:16A; On Resistance Rds(On):0.115Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 16 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 115 / Gate-Source Voltage V = 20 / Fall Time ns = 25 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 37 / Turn-ON Delay Time ns = 6.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 79

***ment14 APAC: MOSFET, N, 100V, 15A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(on):115mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:79W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:16A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.4°C/W; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:79W; Power Dissipation Pd:79W; Pulse Current Idm:60A; SMD Marking:IRFU3910; Termination Type:Through Hole; Turn Off Time:25ns; Turn On Time:27ns; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***ical: Trans MOSFET N-CH 100V 10A 3-Pin (3+Tab) TO-251 Rail

***ser: MOSFETs 10a,100V, 0.165 Ohm 1Ch HS Logic Gate

***ter Electronics: PWR MOS 100V/11A/0.178 OHM N-CH LOGIC LVL TO-251AA

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 10A I(D), 100V, 0.168ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***eco: ADDED FOR DPP(INTERSIL) PKG ID CHANGE

***emi: Power MOSFET, P-Channel, QFET®, -100 V, -6.6 A, 530 mΩ, IPAK

***r Electronics: Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***rchild Semiconductor: This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
NTD6600N-1G DISTI # NTD6600N-1G-ND	ON Semiconductor	MOSFET N-CH 100V 12A IPAK RoHS: Compliant Min Qty: 525 Container: Tube	Limited Supply - Call
NTD6600N DISTI # 863-NTD6600N	ON Semiconductor	MOSFET 100V 12A N-Channel RoHS: Not compliant	0
NTD6600N-1G	ON Semiconductor	RoHS: Not Compliant	1425	1000:$0.4000 500:$0.4200 100:$0.4300 25:$0.4500 1:$0.4900

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: NTD6600NT4G OMO.#: OMO-NTD6600NT4G	MOSFET 100V 12A N-Channel
	Mfr.#: NTD6600G OMO.#: OMO-NTD6600G-1190	Neu und Original
	Mfr.#: NTD6600N OMO.#: OMO-NTD6600N-ON-SEMICONDUCTOR	MOSFET N-CH 100V 12A DPAK
	Mfr.#: NTD6600N-001 OMO.#: OMO-NTD6600N-001-ON-SEMICONDUCTOR	MOSFET N-CH 100V 12A IPAK
	Mfr.#: NTD6600N-1G OMO.#: OMO-NTD6600N-1G-ON-SEMICONDUCTOR	MOSFET N-CH 100V 12A IPAK
	Mfr.#: NTD6600NT4 OMO.#: OMO-NTD6600NT4-ON-SEMICONDUCTOR	MOSFET N-CH 100V 12A DPAK
	Mfr.#: NTD6600NT4G OMO.#: OMO-NTD6600NT4G-ON-SEMICONDUCTOR	MOSFET N-CH 100V 12A DPAK

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5500
Menge eingeben:

Der aktuelle Preis von NTD6600N-1G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,60 $~~; ~~0,60 $~~

10: ~~0,57 $~~; ~~5,70 $~~

100: ~~0,54 $~~; ~~54,00 $~~

500: ~~0,51 $~~; ~~255,00 $~~

1000: ~~0,48 $~~; ~~480,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

NTD6600N 5
NTD66 6
NTD6 71
NTD 750

NTD6600N-1G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes