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MRFE8VP8600HR5

MRFE8VP8600HR5
Mfr. #:
MRFE8VP8600HR5
Hersteller:
NXP / Freescale
Beschreibung:
RF MOSFET Transistors 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MRFE8VP8600HR5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
Dualer N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
2.8 A
Vds - Drain-Source-Durchbruchspannung:
- 500 mV, 115 V
Gewinnen:
21 dB
Ausgangsleistung:
140 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
NI-1230H-4
Verpackung:
Spule
Arbeitsfrequenz:
470 MHz to 860 MHz
Serie:
MRFE8VP8600H
Typ:
HF-Leistungs-MOSFET
Marke:
NXP / Freescale
Anzahl der Kanäle:
2 Channel
Pd - Verlustleistung:
1.25 kW
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 6 V, 10 V
Vgs th - Gate-Source-Schwellenspannung:
1.3 V
Teil # Aliase:
935318365178
Gewichtseinheit:
0.464343 oz
Tags
MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,470 to 860 MHz, - W, Typ Gain in dB is 20 @ 810 MHz, 50 V, LDMOS, SOT1787
***ark
140 W Avg. Over 470-870 Mhz, 50 V Rf Power Ldmos Transistor Rohs Compliant: Yes
***escale Semiconductor
Broadband RF Power LDMOS Transistor, 470-860 MHz, 600 W, 50 V
***et Europe
Trans MOSFET N-CH 115V 5-Pin NI-1230H T/R
***ical
RF Power LDMOS Transistor
***i-Key
TRANS RF N-CH 600W 50V
***hardson RFPD
RF POWER TRANSISTOR
Teil # Mfg. Beschreibung Aktie Preis
MRFE8VP8600HR5
DISTI # V72:2272_07204249		NXP SemiconductorsTrans RF MOSFET N-CH 115V 5-Pin NI-1230H T/R25
  • 25:$128.0100
  • 10:$129.9900
  • 1:$131.3000
MRFE8VP8600HR5
DISTI # MRFE8VP8600HR5-ND		NXP SemiconductorsTRANS RF N-CH 600W 50V
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 50:$135.6182
MRFE8VP8600HR5
DISTI # 25767387		NXP SemiconductorsTrans RF MOSFET N-CH 115V 5-Pin NI-1230H T/R25
  • 25:$128.0100
  • 10:$129.9900
  • 1:$131.3000
MRFE8VP8600HR5
DISTI # MRFE8VP8600HR5		Avnet, Inc.Trans MOSFET N-CH 115V 5-Pin NI-1230H T/R - Tape and Reel (Alt: MRFE8VP8600HR5)
RoHS: Compliant
Min Qty: 50
Container: Reel		Americas - 150
  • 50:$132.7900
  • 100:$132.4900
  • 200:$132.1900
  • 300:$131.7900
  • 500:$131.4900
MRFE8VP8600HR5
DISTI # MRFE8VP8600HR5		Avnet, Inc.Trans MOSFET N-CH 115V 5-Pin NI-1230H T/R (Alt: MRFE8VP8600HR5)
RoHS: Compliant
Min Qty: 50
Container: Tape and Reel		Asia - 0
    MRFE8VP8600HR5.
    DISTI # 23AC7247    		NXP Semiconductors140 W AVG. OVER 470-870 MHZ, 50 V RF POWER LDMOS TRANSISTOR ROHS COMPLIANT: YES0
    • 1:$132.7900
    • 100:$132.4900
    • 200:$132.1900
    • 300:$131.7900
    • 500:$131.4900
    MRFE8VP8600HR5
    DISTI # 841-MRFE8VP8600HR5    		NXP SemiconductorsRF MOSFET Transistors 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor
    RoHS: Compliant    		0
    • 1:$156.9200
    • 5:$153.8700
    • 10:$148.7900
    • 25:$142.4900
    • 50:$140.5400
    MRFE8VP8600HR5Freescale SemiconductorRF Power Field-Effect Transistor
    RoHS: Not Compliant    		225
    • 1000:$129.3000
    • 500:$136.1100
    • 100:$141.7000
    • 25:$147.7700
    • 1:$159.1400
    MRFE8VP8600HR5
    DISTI # MRFE8VP8600HR5    		NXP SemiconductorsRF POWER TRANSISTOR
    RoHS: Compliant    		26
    • 1:$164.3200
    • 10:$151.8800
    • 25:$147.4100
    MRFE8VP8600HR5
    DISTI # C1S233100416356    		NXP SemiconductorsMOSFETs
    RoHS: Not Compliant    		25
    • 25:$128.1100
    • 10:$199.3100
    • 1:$216.4900
    Bild Teil # Beschreibung
    MRFE8VP8600HR5

    Mfr.#: MRFE8VP8600HR5

    OMO.#: OMO-MRFE8VP8600HR5

    		 RF MOSFET Transistors 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor
    MRFE8VP8600HSR5

    Mfr.#: MRFE8VP8600HSR5

    OMO.#: OMO-MRFE8VP8600HSR5

    		 RF MOSFET Transistors 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor
    MRFE8VP8600HSR5

    Mfr.#: MRFE8VP8600HSR5

    OMO.#: OMO-MRFE8VP8600HSR5-NXP-SEMICONDUCTORS

    		 BROADBAND RF POWER LDMOS TRANSIS
    MRFE8VP8600HR5

    Mfr.#: MRFE8VP8600HR5

    OMO.#: OMO-MRFE8VP8600HR5-NXP-SEMICONDUCTORS

    		 RF MOSFET Transistors Broadband RF Power LDMOS Transistor, 470-860 MHz, 600 W, 50 V
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4000
    Menge eingeben:
    Der aktuelle Preis von MRFE8VP8600HR5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    156,92 $
    156,92 $
    5
    153,87 $
    769,35 $
    10
    148,79 $
    1 487,90 $
    25
    142,49 $
    3 562,25 $
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