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FQP10N20C

FQP10N20C
Mfr. #:
FQP10N20C
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 200V N-Ch MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQP10N20C Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
9.5 A
Rds On - Drain-Source-Widerstand:
360 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
72 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
QFET
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Serie:
FQP10N20C
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
5.5 S
Abfallzeit:
72 ns
Produktart:
MOSFET
Anstiegszeit:
92 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
70 ns
Typische Einschaltverzögerungszeit:
11 ns
Gewichtseinheit:
0.063493 oz
Tags
FQP10N20C, FQP10N2, FQP10, FQP1, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 200 V, 9.5 A, 360 mΩ, TO-220
***et Europe
Trans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 200 V 0.36 Ohm Through Hole Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQP10N20C
DISTI # 32638024		ON Semiconductor200V N-CHANNEL ADVANCE Q-FET C1000
  • 1000:$0.4158
FQP10N20C
DISTI # FQP10N20C-ND		ON SemiconductorMOSFET N-CH 200V 9.5A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		874In Stock
  • 5000:$0.4835
  • 3000:$0.5089
  • 1000:$0.5453
  • 100:$0.8361
  • 25:$1.0180
  • 10:$1.0720
  • 1:$1.2000
FQP10N20CTSTU
DISTI # FQP10N20CTSTU-ND		ON SemiconductorMOSFET N-CH 200V 9.5A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    FQP10N20C
    DISTI # V99:2348_06301834    		ON Semiconductor200V N-CHANNEL ADVANCE Q-FET C0
      FQP10N20C
      DISTI # V36:1790_06301834      		ON Semiconductor200V N-CHANNEL ADVANCE Q-FET C0
      • 1000000:$0.3644
      • 500000:$0.3648
      • 100000:$0.4188
      • 10000:$0.5263
      • 1000:$0.5450
      FQP10N20C
      DISTI # FQP10N20C      		ON SemiconductorTrans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP10N20C)
      RoHS: Compliant
      Min Qty: 625
      Container: Bulk      		Americas - 0
      • 6250:$0.4929
      • 3125:$0.5059
      • 1875:$0.5119
      • 1250:$0.5189
      • 625:$0.5219
      FQP10N20C
      DISTI # FQP10N20C      		ON SemiconductorTrans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP10N20C)
      RoHS: Compliant
      Min Qty: 1      		Europe - 0
      • 1000:€0.3729
      • 500:€0.4019
      • 100:€0.4359
      • 50:€0.4749
      • 25:€0.5229
      • 10:€0.5809
      • 1:€0.6539
      FQP10N20C
      DISTI # FQP10N20C      		ON SemiconductorTrans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP10N20C)
      RoHS: Compliant
      Min Qty: 2000
      Container: Tube      		Americas - 0
      • 20000:$0.4649
      • 10000:$0.4769
      • 6000:$0.4829
      • 4000:$0.4889
      • 2000:$0.4919
      FQP10N20CTSTU
      DISTI # FQP10N20CTSTU      		ON Semiconductor- Bulk (Alt: FQP10N20CTSTU)
      RoHS: Not Compliant
      Min Qty: 1042
      Container: Bulk      		Americas - 0
      • 10420:$0.2959
      • 5210:$0.3029
      • 3126:$0.3069
      • 2084:$0.3109
      • 1042:$0.3129
      FQP10N20C
      DISTI # 84H4771      		ON SemiconductorMOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) RoHS Compliant: Yes0
      • 50000:$0.4650
      • 24000:$0.4790
      • 10000:$0.4960
      • 2000:$0.5200
      • 1000:$0.5370
      • 100:$0.7800
      • 10:$1.1200
      • 1:$1.4300
      FQP10N20C
      DISTI # 512-FQP10N20C      		ON SemiconductorMOSFET 200V N-Ch MOSFET
      RoHS: Compliant      		1098
      • 1:$1.1400
      • 10:$0.9700
      • 100:$0.7450
      • 500:$0.6580
      • 1000:$0.5200
      FQP10N20C_Q
      DISTI # 512-FQP10N20C_Q      		ON SemiconductorMOSFET 200V N-Ch MOSFET
      RoHS: Not compliant      		0
        FQP10N20CTSTU
        DISTI # 512-FQP10N20CTSTU        		ON SemiconductorMOSFET N-CH/200V/10A/QFET Short Leads
        RoHS: Compliant        		0
          FQP10N20CON SemiconductorPower Field-Effect Transistor, 9.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
          RoHS: Compliant          		6000
          • 1000:$0.4600
          • 500:$0.4900
          • 100:$0.5100
          • 25:$0.5300
          • 1:$0.5700
          FQP10N20CFairchild Semiconductor CorporationPower Field-Effect Transistor, 9.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
          RoHS: Compliant          		252266
          • 1000:$0.4600
          • 500:$0.4900
          • 100:$0.5100
          • 25:$0.5300
          • 1:$0.5700
          FQP10N20CTSTUFairchild Semiconductor CorporationPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
          RoHS: Compliant          		797
          • 1000:$0.3200
          • 500:$0.3300
          • 100:$0.3500
          • 25:$0.3600
          • 1:$0.3900
          FQP10N20C
          DISTI # 6714998          		ON SemiconductorMOSFET N-CHANNEL 200V 9.5A TO220AB, PK9300
          • 125:£0.3240
          • 5:£0.3320
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          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1984
          Menge eingeben:
          Der aktuelle Preis von FQP10N20C dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          1,14 $
          1,14 $
          10
          0,97 $
          9,70 $
          100
          0,74 $
          74,50 $
          500
          0,66 $
          329,00 $
          1000
          0,52 $
          520,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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